초록 ▼

A device for transporting and storing solid animal waste collected from a self cleaning kitty litter box and replenishing litter within the box. Replacement litter storage is positioned above the box. A mechanism releases predetermined amounts of litter into the box during cycling of a rake that cle

A device for transporting and storing solid animal waste collected from a self cleaning kitty litter box and replenishing litter within the box. Replacement litter storage is positioned above the box. A mechanism releases predetermined amounts of litter into the box during cycling of a rake that cleans the box. A collection member has a first position where it receives waste collected by the rake. The collection member is disposed between the storage member and the box and at a second position transfers the waste to the storage member. A drive mechanism is mounted to the collection member moves it between the first position and the second position. The combined members in conjunction with the self cleaning litter box provide a litter box that needs no maintenance over long periods.

대표청구항 ▼

A device for transporting and storing solid animal waste collected from a self cleaning kitty litter box and replenishing litter within the box. Replacement litter storage is positioned above the box. A mechanism releases predetermined amounts of litter into the box during cycling of a rake that cle

A device for transporting and storing solid animal waste collected from a self cleaning kitty litter box and replenishing litter within the box. Replacement litter storage is positioned above the box. A mechanism releases predetermined amounts of litter into the box during cycling of a rake that cleans the box. A collection member has a first position where it receives waste collected by the rake. The collection member is disposed between the storage member and the box and at a second position transfers the waste to the storage member. A drive mechanism is mounted to the collection member moves it between the first position and the second position. The combined members in conjunction with the self cleaning litter box provide a litter box that needs no maintenance over long periods. d forming a layer of epitaxial material on the semiconductor material, the layer of epitaxial material having a top surface and a bottom surface, a first region that extends from the top surface to the first zener region, and a second region that extends from the top surface to the second zener region, the first region having the first conductivity type and the second region having the second conductivity type. 2. The method of claim 1 and further comprising the step of forming a first transistor buried region of the second conductivity type, the first transistor buried region contacting the bottom surface of the layer of epitaxial material. 3. The method of claim 2 and further comprising the step of forming a first transistor isolation region of the first conductivity type in the semiconductor material, the first transistor buried region contacting the first transistor isolation region. 4. The method of claim 3 wherein the first zener region and the first transistor isolation region are formed at a same time. 5. The method of claim 2 and further comprising the step of forming a second transistor buried region of the first conductivity type, the second transistor buried region contacting the bottom surface of the layer of epitaxial material. 6. The method of claim 5 and further comprising the step of forming a second transistor isolation region of the second conductivity type in the semiconductor material, the second transistor buried region contacting the second transistor isolation region. 7. The method of claim 5 wherein the epitaxial layer has a third region that extends from the top surface to the second transistor buried region, and a fourth region that extends from the top surface to the first transistor buried region. 8. The method of claim 7 wherein the third region of the epitaxial layer has the first conductivity type and the fourth region of the epitaxial layer has the second conductivity type. 9. The method of claim 8 and further comprising the steps of: forming a first base of a second conductivity type that contacts the third region of the epitaxial layer; and forming a second base of a first conductivity type that contacts the fourth region of the epitaxial layer. 10. The method of claim 9 and further comprising the steps of: forming an emitter of the first conductivity type that contacts the first base; and forming an emitter of the second conductivity type that contacts the second base. 11. The method of claim 10 wherein a dopant concentration of the first region of the epitaxial layer is greater than a dopant concentration of the first zener region. 12. The method of claim 2 wherein the second zener region and the first transistor buried region are formed at a same time. 13. The method of claim 1 and further comprising the step of forming a third zener region of the first conductivity type in a surface of the first zener region, the third zener region having a higher dopant concentration than the first zener region. 14. The method of claim 13 and further comprising the step of forming an electrically-isolating region between the second zener region and a portion of the first zener region. 15. The method of claim 13 wherein the third zener region and the second transistor buried region are formed at a same time. 16. The method of claim 1 wherein a dopant concentration of the first region of the epitaxial layer is greater than a dopant concentration of the first zener region. 17. The method of claim 1 and further comprising the step of forming a transistor buried region of the first conductivity type, the transistor buried region contacting the bottom surface of the layer of epitaxial material. 18. The method of claim 17 wherein the epitaxial layer has a third region that extends from the top surface to the transistor buried region, and further comprising the step of forming a base of the second conductivity type that contacts the third region of the epitaxial layer. 19. The method of claim 18 a