초록 ▼

A laser repair apparatus comprises a stage for a wafer to be mounted on, a laser beam source for emitting a laser beam, focus adjusting means for adjusting a focus of the laser beam, and focal point measuring means for measuring a focal point of the laser beam with respect to the wafer on the stage,

A laser repair apparatus comprises a stage for a wafer to be mounted on, a laser beam source for emitting a laser beam, focus adjusting means for adjusting a focus of the laser beam, and focal point measuring means for measuring a focal point of the laser beam with respect to the wafer on the stage, and a system controller for controlling an overall operation of the laser repair apparatus. The focus adjusting means adjusts a focus with respect to each part to be repair-processed. The system controller sets a focal point at a prescribed position in the required part to be repair-processed as a reference focal point. In performing the repair processing at another position, a focal point is detected by the focal point measuring means. The system controller interrupts the repair processing when the focal point is outside an allowable range from the reference focal point.

대표청구항 ▼

1. A laser repair method for a semiconductor wafer, comprising the following steps of: measuring a focal point of a laser beam on the wafer on a stage, adjusting a focus on each required part to be repair-processed, setting a focal point on which the laser beam is focused at a prescribed positi

1. A laser repair method for a semiconductor wafer, comprising the following steps of: measuring a focal point of a laser beam on the wafer on a stage, adjusting a focus on each required part to be repair-processed, setting a focal point on which the laser beam is focused at a prescribed position in the required part to be repair-processed as a reference focal point, detecting a focal point at another position when the repair-processing is performed at said another position in the required part to be repair-processed, and performing repair-processing on the wafer by the laser beam by cutting and/or trimming a circuit pattern on a position in the required part of the wafer without adjusting the focal point, where a width of said circuit pattern is less than 1.0 μm, and interrupting the repair-processing on the required part when the focal point is outside an allowable range from the reference focal point without adjusting the focal point. 2. A laser repair method for a semiconductor wafer, comprising the following steps of: measuring a focal point of a laser beam on the wafer on a stage, adjusting a focus on each required part to be repair-processed, measuring a plurality of focal points with respect to a plurality of positions in the required part to be repair-processed in advance, setting one of the plural focal points with respect to the plural positions as a reference focal point, performing repair-processing on the wafer by the laser beam by cutting and/or trimming a circuit pattern on a position in the required part of the wafer without adjusting the focal point, where a width of said circuit pattern is less than 1.0 μm, and interrupting the repair-processing on the required part from being performed when a focal point with respect to one of the plural positions in the required part is outside an allowable range from the reference focal point without adjusting the focal point. 3. A laser repair method according to claim 1, wherein said required part is a whole area of the wafer, a plurality of chip areas in the wafer, a whole area of one of the chips in the wafer, or a partial area in said one of the chips. 4. A laser repair method according to claim 2, wherein said required part is a whole area of the wafer, a plurality of chip areas in the wafer, a whole area of one of the chips in the wafer, or a partial area in said one of the chips.