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A Fabry-Perot filter device for selectively transmitting three wavelength bands of infrared radiation, including a reference light band, wherein the filter device comprises a fixed mirror formed on a substrate; a movable mirror arranged opposite to the fixed mirror with a gap formed therebetween so

A Fabry-Perot filter device for selectively transmitting three wavelength bands of infrared radiation, including a reference light band, wherein the filter device comprises a fixed mirror formed on a substrate; a movable mirror arranged opposite to the fixed mirror with a gap formed therebetween so that the movable mirror is displaced with respect to the fixed mirror by applying an external force; a fixed electrode formed on the fixed mirror; and a movable electrode formed on the movable mirror and arranged opposite to the fixed electrode wherein the movable electrode is displaced by applying a potential difference across the fixed and movable electrodes so that the width of the gap is varied in at least three steps, whereby at least three wavelength bands of infrared radiation are selectively transmitted through the filter device.

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1. A Fabry-Perot filter device comprising: a fixed mirror; a movably mirror arranged opposite to said fixed mirror with a gap formed therebetween; wherein width of said gap is varied by displacing said movable mirror with respect to said fixed mirror; and wherein said movable mirror is forme

1. A Fabry-Perot filter device comprising: a fixed mirror; a movably mirror arranged opposite to said fixed mirror with a gap formed therebetween; wherein width of said gap is varied by displacing said movable mirror with respect to said fixed mirror; and wherein said movable mirror is formed using a multilayer optical thin film comprising at least one layer presenting tensile stress; wherein said thin film is a three layer optical thin film having a structure selected from the group consisting of the following structures (a)-(d): (a) a structure wherein said thin film is produced by laminating a high refractive index layer presenting compressive stress, a low refractive index layer presenting tensile stress, and another high refractive index layer presenting compressive stress, in the foregoing order; (b) a structure wherein said thin film is produced by laminating a high refractive index layer presenting tensile stress, a low refractive index layer presenting compressive stress, and another high refractive index layer presenting tensile stress, in the foregoing order; (c) a structure wherein said thin film is produced by laminating a high refractive index layer presenting a low tensile stress, a low refractive index layer presenting a high tensile stress, and another high refractive index layer presenting a low tensile stress, in the foregoing order; and (d) a structure wherein said thin film is produced by laminating a high refractive index layer presenting a high tensile stresss, a low refractive index layer presenting a low tensile stress, and another high refractive index layer presenting a high tensile stress, in the foregoing order. 2. The device of claim 1, wherein thickness of said thin film is λ/4, wherein λ is the wavelength. 3. The device of claim 1, wherein said movable mirror and said fixed mirror comprise silicon. 4. The device of claim 1, further comprising a fixed electrode formed on said fixed mirror; and a movable electrode formed on said movable mirror; and an isolation layer disposed between said fixed electrode and said movable electrode. 5. The device of claim 4, wherein said isolation layer is formed on said fixed electrode. 6. The device of claim 5, wherein said isolation layer is made of silicon nitride or silicon oxide. 7. The device of claim 4, wherein said movable mirror is displaced by applying a potential difference across said fixed electrode and said movable electrode so that a width of said gap is varied in at least three steps, whereby at least three wavelength bands of said infrared radiation are selectively transmitted through said Fabry-Perot filter device. 8. The device of claim 7, wherein said fixed electrode and said movable electrode comprise silicon with high impurity concentration. 9. The device of claim 1, wherein said fixed mirror is formed on a substrate, and wherein said gap is formed by depositing a sacrificial layer of predetermined shape and size between said fixed mirror and said movable mirror and then removing the sacrificial layer completely or partially by means of etching. 10. The device of claim 9, wherein a vertical cross section of said sacrificial layer is approximately a trapezoid and electrode pads are formed in a region outside of said sacrificial layer. 11. The device of claim 9, further comprising an antireflection layer formed on a backside of said substrate; and a metal aperture formed on said antireflective layer through a protection layer and having an optical area in part; wherein said sacrificial layer is first removed by etching and then a portion of said protection layer present in said optical area is removed. 12. The device of claim 9, further comprising etching holes formed at a center and along a periphery of said movable mirror in order to etch said sacrificial layer.