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An improved, multifunction office furniture system having a novel interlocking connecting mechanism which permits the easy assembly of a variety of different structural components in a variety of different configurations to form highly efficient work areas. The system includes uniquely configured, v

An improved, multifunction office furniture system having a novel interlocking connecting mechanism which permits the easy assembly of a variety of different structural components in a variety of different configurations to form highly efficient work areas. The system includes uniquely configured, vertical support columns to which a number of different types of structural components can be quickly and easily connected and provides a highly versatile work station system which is very attractive, is easy to assembly, disassemble and adjust, and yet, is structurally sound and durable in use. Because of its novel construction, the system is capable of readily accommodating changing work conditions in the users' facilities.

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An improved, multifunction office furniture system having a novel interlocking connecting mechanism which permits the easy assembly of a variety of different structural components in a variety of different configurations to form highly efficient work areas. The system includes uniquely configured, v

An improved, multifunction office furniture system having a novel interlocking connecting mechanism which permits the easy assembly of a variety of different structural components in a variety of different configurations to form highly efficient work areas. The system includes uniquely configured, vertical support columns to which a number of different types of structural components can be quickly and easily connected and provides a highly versatile work station system which is very attractive, is easy to assembly, disassemble and adjust, and yet, is structurally sound and durable in use. Because of its novel construction, the system is capable of readily accommodating changing work conditions in the users' facilities. photomask using a photolithographic tool, to form a polyimide pattern exposing a portion of said second dielectric layer; and etching said exposed portion of said second dielectric layer to form a spacer on a side wall of said fuse and said fuse window, and to expose said metal layer, said second dielectric layer being etched by an anisotropic etching step using said polyimide pattern as a mask, said passivation coating on said semiconductor wafer being thus fabricated by etching said first dielectric layer, said second dielectric layer, and said third dielectric layer according to said first photomask and said second photomask. 2. The method as claim 1, wherein said first dielectric layer is made of silicon dioxide. 3. The method as claim 1, wherein said semiconductor wafer uses spin on glass (SOG). 4. The method as claim 1, wherein said second dielectric layer is made of silicon nitride. 5. A method for forming a multi-layered passivation on a wafer, the method comprising: sequentially forming a silicon oxide layer, a silicon nitride layer and a polyimide layer on a substrate, wherein the polyimide layer is a negative photoresist having a thickness of about 5 microns; forming a polyimide pattern serving as a photoresist pattern on the silicon nitride layer, by exposing the polyimide layer through a photomask using a photolithographic tool; and etching the silicon nitride layer and the silicon oxide layer by using the photoresist pattern as a mask, whereby the polyimide pattern, the etched silicon nitride layer and the etched silicon oxide layer collectively serve as a multi-layered passivation. 6. A method for forming a multi-layered passivation on a wafer, the method comprising: forming a silicon oxide pattern on a substrate; sequentially forming a silicon nitride layer and a polyimide layer on the silicon oxide pattern, wherein the polyimide layer is a negative photoresist having a thickness of about 5 microns; forming a polyimide pattern serving as a photoresist pattern on the silicon nitride layer, by exposing the polyimide layer through a photomask using a photolithographic tool; and etching the silicon nitride layer by using the photoresist pattern as a mask, whereby the polyimide pattern, the etched silicon nitride layer and the silicon oxide pattern collectively serve as a multi-layered passivation.