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A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a

A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel.

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A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a

A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel. A cement composition for forming a permeable cement sand screen in a well bore comprising: Portland cement; a particulate cross-linked gel containing an internal breaker which after time causes said gel to break into a liquid, wherein said particulate cross-linked gel containing an internal breaker is present in said cement composition in the range of from about 10% to about 30% by weight of cement in said composition and is comprised of water, a hydratable polymer of hydroxyalkylcellulose grafted with vinyl phosphonic acid, a breaker selected from the group consisting of hemicellulase, encapsulated ammonium persulfate, ammonium persulfate activated with ethanol amines and sodium chlorite and a cross-linking agent comprised of a Bronsted-Lowry or Lewis base; and water present in an amount sufficient to form a slurry. 17. The composition of claim 16 wherein said water is selected from the group consisting of fresh water and salt water and is present in an amount in the range of from about 30% to about 70% by weight of cement in said composition. 18. The composition of claim 16 further comprising a mixture of foaming and foam stabilizing surfactants comprised of ethoxylated hexanol ether sulfate surfactant present in an amount of about 63.3 parts by weight of said mixture, cocoylamidopropylbetaine surfactant present in an amount of about 31.7 parts by weight of said mixture and cocoylamidopropyldimethylamine oxide present in an amount of about 5 parts by weight of said mixture. 19. The composition of claim 18 wherein said mixture of foaming and foam stabilizing surfactants is present in the range of from about 0.1% to about 5% by weight of water in said composition. 20. The composition of claim 18 further comprising a gas in an amount sufficient to form a foam wherein said gas is selected from the group consisting of air and nitrogen. 21. The composition of claim 16 further comprising an acid soluble particulate solid. 22. The composition of claim 21 wherein said acid soluble particulate solid is calcium carbonate and is present in an amount in the range of from about 2.5% to about 25% by weight of cement in said composition. 23. The composition of claim 16 further comprising a liquid hydrocarbon solvent soluble particulate solid. 24. The composition of claim 23 wherein said liquid hydrocarbon solvent soluble particulate solid is particulate gilsonite and is present in an amount in the range of from about 2.5% to about 25% by weight of cement in said composition. 8. Aug. 1997.* Koji Sumino, "Dislocation Behavior and Mechanical Strengths of Float-Zone Silicon Crystals and Czochralski Silicon Crystals," Semiconductor Silicon 1981, ed. Howard R. Huff, et al., pp. 208-219, Pennington, NJ: The Electrochemical Society, Inc.