IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0662773
(2000-09-15)
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발명자
/ 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
Killworth, Gottman, Hagan & Schaeff LLP
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인용정보 |
피인용 횟수 :
25 인용 특허 :
63 |
초록
▼
A low cost amperometric oxygen sensor which utilizes a plurality of oxygen ion conductor layers interposed between a plurality of oxygen-porous electrode layers is provided. Oxygen from a sample gas enters the sensor at porous cathode electrodes, is pumped through the ion conductor layers, and exits
A low cost amperometric oxygen sensor which utilizes a plurality of oxygen ion conductor layers interposed between a plurality of oxygen-porous electrode layers is provided. Oxygen from a sample gas enters the sensor at porous cathode electrodes, is pumped through the ion conductor layers, and exits through the anode electrodes. The amperometric current generated is representative of the partial pressure of oxygen in the sample gas. In accordance with one embodiment of the present invention, an amperometric oxygen sensor is provided for determining the oxygen partial pressure of a gas. The sensor comprises a sensor body defined by a plurality of oxygen-porous electrode layers and at least one oxygen ion conductor layer. The plurality of oxygen-porous electrode layers include at least one cathode layer and at least one anode layer. Each of the cathode layers define first and second major cathode surfaces and each of the anode layers defining first and second major anode surfaces. The oxygen ion conductor layer is interposed between the first major cathode surface and the first major anode surface. The cathode layer defines an unexposed second major cathode surface and a cathode end portion exposed along a first edge of the sensor body. The anode layer defines an unexposed second major anode surface and an anode end portion exposed along a second edge of the sensor body. The amperometric oxygen sensor further comprises a voltage source having a first pole connected to the cathode layer and a second pole connected to the anode layer, and a current meter connected to measure an amperometric current flowing through the at least one ion conductor layer.
대표청구항
▼
A low cost amperometric oxygen sensor which utilizes a plurality of oxygen ion conductor layers interposed between a plurality of oxygen-porous electrode layers is provided. Oxygen from a sample gas enters the sensor at porous cathode electrodes, is pumped through the ion conductor layers, and exits
A low cost amperometric oxygen sensor which utilizes a plurality of oxygen ion conductor layers interposed between a plurality of oxygen-porous electrode layers is provided. Oxygen from a sample gas enters the sensor at porous cathode electrodes, is pumped through the ion conductor layers, and exits through the anode electrodes. The amperometric current generated is representative of the partial pressure of oxygen in the sample gas. In accordance with one embodiment of the present invention, an amperometric oxygen sensor is provided for determining the oxygen partial pressure of a gas. The sensor comprises a sensor body defined by a plurality of oxygen-porous electrode layers and at least one oxygen ion conductor layer. The plurality of oxygen-porous electrode layers include at least one cathode layer and at least one anode layer. Each of the cathode layers define first and second major cathode surfaces and each of the anode layers defining first and second major anode surfaces. The oxygen ion conductor layer is interposed between the first major cathode surface and the first major anode surface. The cathode layer defines an unexposed second major cathode surface and a cathode end portion exposed along a first edge of the sensor body. The anode layer defines an unexposed second major anode surface and an anode end portion exposed along a second edge of the sensor body. The amperometric oxygen sensor further comprises a voltage source having a first pole connected to the cathode layer and a second pole connected to the anode layer, and a current meter connected to measure an amperometric current flowing through the at least one ion conductor layer. source and a substrate which are placed in a vacuum chamber to produce discharges at a surface of a cathode of the arc evaporation source so that the generated ions clean the substrate and subsequently form a coating layer on the substrate, the process comprising: (a) providing the vacuum chamber with a subchamber having a gas-introducing portion; (b) providing the vacuum chamber with a coating chamber, (c) connecting the subchamber to the coating chamber through a passage having an opening with a reduced cross-sectional area to cause flow resistance between the subchamber and coating chamber; (d) placing the arc evaporation source in the subchamber; and (e) introducing at least one type of gas selected from the group consisting of a reactive gas and an inert gas into the subchamber from the gas-introducing portion at the time of substrate cleaning, whereby a higher gas pressure is maintained in subchamber than in the vicinity of the substrate due to the passage having a reduced cross-sectional area. 2. The vacuum arc coating process as defined in claim 1, wherein the gas pressure in the subchamber is controlled to fall within the range of 0.0001 to 10 Pa. 3. A vacuum arc coating process as defined in claim 1, wherein at least one type of gas selected from the group consisting of nitrogen, hydrogen, methane, argon, helium, acetylene, and oxygen gases is used as a gas to be introduced into the subchamber. 4. The process according to claim 1, comprising varying the flow resistance between the subchamber and coating chamber. 5. The process according to claim 4, comprising varying the flow resistance using a flap to adjust the opening of the passage. 6. The process according the claim 4, comprising varying the flow resistance using a shutter to adjust the opening of the passage. 7. A vacuum arc coating machine comprising: a vacuum chamber comprising a subchamber and a coating chamber, the subchamber having a gas-introducing portion and connected to the coating chamber through a passage having an opening with a reduced cross-sectional area to cause flow resistance between the subchamber and coating chamber; and an arc evaporation source in the subchamber, wherein the passage having a reduced cross sectional area maintains a higher gas pressure in the subchamber than in the coating chamber. 8. The vacuum arc coating maching according to claim 7, comprising means for varying the flow resistance between the subchamber and coating chamber. 9. The vacuum arc coating maching according to claim 8, wherein the means for varying the flow resistance comprises a flap to adjust the opening of the passage. 10. The vacuum arc coating maching according to claim 8, wherein the means for varying the flow resistance comprises a shutter to adjust the opening of the passage. 19800800, Olson; US-4571292, 19860200, Liu et al.; US-D292229, 19871000, Knudson et al.; US-4882029, 19891100, Eickmann; US-4897162, 19900100, Lewandowski et al.; US-4947153, 19900800, Berger; US-4959130, 19900900, Josowicz et al.; US-5131999, 19920700, Gunasingham; US-5214964, 19930600, Hartfiel; US-5310524, 19940500, Campbell et al.; US-5364510, 19941100, Carpio; US-5366609, 19941100, White et al.; US-5374892, 19941200, Sturrock et al.; US-5380422, 19950100, Negishi et al.; US-5395493, 19950300, Pinkowski; US-5400818, 19950300, Cosentino et al.; US-5470484, 19951100, McNeel; US-5494637, 19960200, Barlow; US-5503720, 19960400, Teske; US-5644501, 19970700, Lin et al.
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