초록

A toner comprised of resin and a charge additive comprised of a complex of a hard acid and a hard base.

대표청구항 ▼

A toner comprised of resin and a charge additive comprised of a complex of a hard acid and a hard base. ness dependent upon the wavelength of the EUVL irradiation, the real portion of the index of refraction of the etching stop layer (n), and the angle of incidence of the EUVL irradiation (θ) by the

A toner comprised of resin and a charge additive comprised of a complex of a hard acid and a hard base. ness dependent upon the wavelength of the EUVL irradiation, the real portion of the index of refraction of the etching stop layer (n), and the angle of incidence of the EUVL irradiation (θ) by the following relationship: Thickness=mλ/(2n cos θ) where m is an integer. 9. The mask of claim 7 wherein said etching stop layer has a thickness that provides an optical path that is an integer multiple of 2π. 10. The mask of claim 7 wherein said etching stop layer is formed from carbon, chromium, oxide, or ruthenium. 11. A photolithography mask comprising: a multilayer stack; a supplemental multilayer stack formed atop said multilayer stack; and an absorptive layer disposed in trenches formed within said supplemental multilayer stack. 12. The photolithography mask of claim 11 wherein said multilayer stack and said supplemental multilayer stack are formed from pairs comprising a molybdenum thin film and a silicon thin film. 13. The photolithography mask of claim 11 wherein said absorptive layer is formed from chromium, tantalum, tantalum nitride, tungsten, aluminum, germanium, silicon germanium or copper. 14. The photolithography mask of claim 11 further comprising a cap silicon layer formed atop of said supplemental multilayer stack. 15. The photolithography mask of claim 14 wherein the top of said absorptive layer is substantially planar with the top of said cap silicon layer. 16. The photolithography mask of claim 11 wherein the top of said absorptive layer is substantially planar with the top of said supplemental multilayer stack. 17. The mask of claim 11 further including an etching stop layer formed between said multilayer stack and said supplemental multilayer stack. 18. The mask of claim 17 wherein said etching stop layer has a thickness dependent upon the wavelength of the EUVL irradiation, the real portion of the index of refraction of the etching stop layer (n), and the angle of incidence of the EUVL irradiation (θ) by the following relationship: Thickness=mλ/(2n cos θ) where m is an integer. 19. The mask of claim 17 wherein said etching stop layer has a thickness that provides an optical path that is an integer multiple of 2π. 20. The mask of claim 17 wherein said etching stop layer is formed from carbon, chromium, oxide, or ruthenium. 21. A method for forming a photolithography mask comprising: providing a multilayer stack comprised of a plurality of pairs of thin films; forming a supplemental multilayer stack on said multilayer stack; patterning and etching trenches in said supplemental multilayer stack, said trenches forming a photolithography mask pattern; and forming an absorptive layer into said trenches. 22. The method of claim 21 further comprising forming a cap silicon layer over said multilayer stack prior to the formation of said trenches. 23. The method of claim 22 further comprising forming a thin amorphous silicon layer over said cap silicon layer and said absorptive layer. 24. The method of claim 22 further comprising depositing a contrast layer atop said cap silicon layer prior to formation of the trenches. 25. The method of claim 21 wherein said absorptive layer comprises aluminum, titanium, tungsten, chromium, copper, germanium, silicon germanium, tantalum, or tantalum nitride. 26. The method of claim 21 wherein the forming of said absorptive layer comprises: depositing said absorptive layer over said multilayer stack and into said trenches; and performing a chemical mechanical polishing step to remove a portion of said absorptive layer outside of said trenches. 27. The method of claim 21 further comprising depositing a contrast layer atop said multilayer stack prior to formation of the trenches. 28. The method of claim 27 further comprising repairing defects in said photolithography mask after the formation of said trenches. 29. The method of claim 27 wherein protrusion defects are repaired using a focused ion beam. 30. The method of claim 29 wherein said etching stop