초록 ▼

The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure including a material layer o

The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure. Interconnect structure including a material layer of Cu, Si and O, as essential elements, is formed between said copper wire or via and the inorganic barrier film.

대표청구항 ▼

1. An interconnect structure comprising at least one copper line or via; a material layer comprising Cu, Si and O located atop said at least on copper line or via; and an inorganic barrier layer located atop said material layer. 2. The interconnect structure of claim 1 wherein said material la

1. An interconnect structure comprising at least one copper line or via; a material layer comprising Cu, Si and O located atop said at least on copper line or via; and an inorganic barrier layer located atop said material layer. 2. The interconnect structure of claim 1 wherein said material layer further includes at least one of C, H, N and F. 3. The interconnect structure of claim 1 wherein said material layer is a continuous layer. 4. The interconnect structure of claim 1 wherein said material layer has a thickness of less than 10 nm. 5. The interconnect structure of claim 4 wherein said material layer has a thickness of from 1 to about 5 nm. 6. The interconnect structure of claim 1 wherein said material layer has a variable thickness. 7. The interconnect structure of claim 1 wherein barrier layer is composed of Si3N4,SiC, hydrogenated Si3N4or hydrogenated SiC. 8. The interconnect structure of claim 7 wherein said inorganic barrier film is hydrogenated Si3N4or hydrogenated SiC. 9. The interconnect structure of claim 1 further comprising a dielectric material about said at least one copper line or via. 10. The interconnect structure of claim 9 wherein said dielectric material is selected from the group consisting of SiO2,fluorinated SiO2,S3N4,polyimides, diamond, diamond-like carbon, silicon polymers, paralyene polymers and fluorinated diamond-like carbon. 11. The interconnect structure of claim 10 wherein said dielectric material is SiO2. 12. The interconnect structure of claim 1 wherein said inorganic barrier film is Si3N4and said material layer contains Cu, Si, O and N, whereby said material layer improves the adhesion of said copper line or via and said Si3N4barrier film.