이 특허에 인용된 특허 (154)

1. Qureshi Shahid U. H. (Natick MA) Seitz Karl W. (Norfolk MA) Wilson Robert M. (Walpole MA), Adaptive communication rate modem.

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2. Guenzer Charles S. (3852 Grove Ave. Palo Alto CA 94303), Bismuth titanate as a template layer for growth of crystallographically oriented silicon.

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3. Ortel William G., Broad band optical fiber telecommunications network.

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4. Fork David K. ; Boyce James B. ; Mei Ping ; Ready Steve ; Johnson Richard I. ; Anderson Greg B., Buffered substrate for semiconductor devices.

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5. Ella Juha,FIX, Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror.

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6. Ramesh Ramamoorthy (Tinton Falls NJ), C-axis perovskite thin films grown on silicon dioxide.

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7. McKee Rodney Allen ; Walker Frederick Joseph, CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films.

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8. Kao Yung-Chung (Dallas TX) Plumton Donald L. (Dallas TX), Capped anneal.

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9. Abrokwah Jonathan K. (Tempe AZ) Wu Schyi-Yi (Mesa AZ) Huang Jenn-Hwa (Gilbert AZ), Complementary heterojunction field effect transistor with an anisotype N+gate for P-channel devices.

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10. Lo Yu-Hwa, Compliant universal substrate for epitaxial growth.

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11. Nashimoto Keiichi (Minami-ashigara JPX), Composite optical modulator.

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12. Conrad Wayne Ernest,CAX, Construction of a vacuum cleaner head.

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13. Fitzgerald Eugene A., Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization.

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14. Yamakido Kazuo (Hinode JPX) Kobayashi Yoichiro (Ohme JPX) Otsuka Masanori (Kokubunji JPX) Okazaki Takao (Hamura JPX) Ishihara Yukihito (Ohme JPX) Nishikawa Norimitsu (Ohme JPX) Tamba Yuko (Ohme JPX), Converter, offset adjustor, and portable communication terminal unit.

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15. Dijaili Sol P. (Moraga CA) Patterson Frank G. (Livermore CA) Deri Robert J. (Pleasanton CA), Cross-talk free, low-noise optical amplifier.

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16. Inam Arun (Red Bank NJ) Ramesh Ramamoorthy (Eatontown NJ), Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovski.

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17. Guenzer Charles S. (3852 Grove Ave. Palo Alto CA 94303), Crystallographically oriented growth of silicon over a glassy substrate.

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18. Ramesh Ramamoorthy (Tinton Falls NJ), Cubic metal oxide thin film epitaxially grown on silicon.

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19. Inoue Naoya,JPX ; Hayashi Yoshihiro,JPX, DC magnetron sputtering method for manufacturing electrode of ferroelectric capacitor.

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20. Klee Mareike K.,DEX ; Brand Hans-Wolfgang,DEX ; Jungk Hans-Otto,DEX, Electronic component and method of manufacturing same.

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21. Knapp James H. ; Carney Francis J. ; Norton Laura J., Electronic component for aligning a light transmitting structure.

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22. Manasevit Harold M. (Anaheim CA), Epitaxial composite and method of making.

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23. Umeno Masayoshi (Nagoya JPX) Sakai Shiro (Nagoya JPX) Yahagi Shinichiro (Ohbu JPX), Epitaxial gallium arsenide semiconductor on silicon substrate with gallium phosphide and superlattice intermediate layer.

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24. Jia Quanxi, Epitaxial oxides on amorphous SiO.sub.2 on single crystal silicon.

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25. Koo Bon-jae,KRX, Ferroelectric memory devices having well region word lines and methods of operating same.

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26. Watanabe Yukio (Machida JPX), Field-effect transistor with perovskite oxide channel.

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27. Wadaka Shusou,JPX ; Misu Koichiro,JPX ; Nagatsuka Tsutomu,JPX ; Kimura Tomonori,JPX ; Kameyama Shunpei,JPX ; Maeda Chisako,JPX ; Yamada Akira,JPX ; Honda Toshihisa,JPX, Film bulk acoustic wave device.

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28. Thomas E. Raymond (Dayton OH) Cahill Lysle D. (Dayton OH) Marshall William W. (Xenia OH) Talley Luke L. (Centerville OH) Lawson John A. (Dayton OH) Wilcox Brian N. (Kettering OH), Flat bed scanner system and method.

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29. Shahan Van B. (Austin TX) Harvey Paul E. (Austin TX) Huntsman Clayton D. (Brandon FL) Someshway Ashok H. (Austin TX), Floating point numeric data processor.

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30. Nghiem David, Folded quarter-wave patch antenna.

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31. Northrup John E. ; Romano Linda T. ; Bringans Ross D., Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities.

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32. Hovel Harold J. (Katonah NY) Rosenberg Robert (Peekskill NY), Gallium aluminum arsenide integrated circuit structure using germanium.

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33. McKee Rodney A. ; Walker Frederick J. ; Chisholm Matthew F., Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate.

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34. Abrokwah Jonathan K. (Tempe AZ) Lucero Rodolfo (Scottsdale AZ) Rollman Jeffrey A. (Phoenix AZ), HIGFET and method.

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35. Manchester Kenneth E. (Princeton MA), Hall sensor with integrated pole pieces.

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36. Abrokwah Jonathan K. (Tempe AZ) Huang Jenn-Hwa (Gilbert AZ) Ooms William J. (Chandler AZ) Shurboff Carl L. (Grayslake IL) Hallmark Jerald A. (Gilbert AZ), Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making.

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37. Brunel Dominique,FRX ; Trichet Jacques,FRX, High frequency amplifier and control.

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38. Goossen Keith Wayne ; Walker James A., Hybrid chip and method therefor.

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39. Meunier Paul L. (Orsay FRX) Razeghi Manijeh (Orsay FRX), III-V Compound heteroepitaxial 3-D semiconductor structures utilizing superlattices.

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40. Nghiem David, Increased bandwidth patch antenna.

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41. Schetzina Jan Frederick (Cary NC), Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride.

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42. Schetzina Jan Frederick (Cary NC), Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitrid.

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43. Schetzina Jan Frederick, Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well.

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44. Ghezzo Mario (Ballston Lake NY) Yakymyshyn Christopher P. (Raleigh NC) Saia Richard J. (Schenectady NY) Polla Dennis L. (Raleigh NC), Integrated microelectromechanical polymeric photonic switch.

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45. Lessin Arlen R. (New York NY) Gruppuso Frank M. (Commack NY) Harrison Shelley A. (Dix Hills NY), Intelligent portable interactive personal data system.

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46. Taddiken Albert H. (Dallas TX), Interface circuit operable to perform level shifting between a first type of device and a second type of device.

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47. Ma Tso-Ping (Branford CT), Isotopically enriched semiconductor devices.

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48. Ma Tso-Ping (Branford CT), Isotopically enriched semiconductor devices.

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49. Newns Dennis Merton, Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications.

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50. Plesko George A., Laser based PCMCIA data collection system with automatic triggering for portable applications and method of use.

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51. Andringa Keimpe (Sherborn MA), Laser gyroscope.

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52. Smith Irl W. (Newton MA) Dorschner Terry A. (Newton MA), Laser gyroscope system.

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53. Delcoco Robert J. (Columbia MD) Kroeger Brian W. (Ellicott City MD) Kurtz John J. (Catonsville MD), Local area network with star topology and ring protocol.

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54. Farb Joseph E. (Riverside CA), Magnetic field detection.

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55. Partin Dale L. (Ray MI) Heremans Joseph P. (Troy MI) Green Louis (Rochester Hills MI), Magnetic field sensor on elemental semiconductor substrate with electric field reduction means.

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56. Fischer Michael A. (San Antonio TX), Medium access control protocol for wireless network.

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57. Koganei Akio,JPX ; Nishimura Naoki,JPX, Memory device utilizing giant magnetoresistance effect.

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58. Hayashi Shigenori (Nara JPX) Komaki Kazuki (Osaka JPX) Kamada Takeshi (Osaka JPX) Kitagawa Masatoshi (Osaka JPX) Deguchi Takashi (Shiga JPX) Takayama Ryoichi (Osaka JPX) Hirao Takashi (Osaka JPX), Method and apparatus for fabrication of dielectric thin film.

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59. Yamashita Youji (Shizuoka JPX), Method and apparatus for manufacturing semi-insulation GaAs monocrystal.

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60. Cook Robert K. (Poughkeepsie) Knepper Ronald W. (Lagrangeville) Kulkarni Subodh K. (Fishkill) Lange Russell C. (Newburgh) Ronsheim Paul A. (Wappingers Falls) Subbanna Seshadri (Hopewell Junction) Tej, Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface.

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61. Lebby Michael S. (Chandler AZ) Norman Michael P. (Chandler AZ), Method for fabricating an angled diffraction grating.

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62. Lee Ming-Tsan,TWX ; Liu Chuan H.,TWX ; Fu Kuan-Yu,TWX, Method for fabricating an oxide layer on silicon with carbon ions introduced at the silicon/oxide interface in order to reduce hot carrier effects.

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63. So Sang Mun,KRX, Method for fabricating silicon-on-insulator wafer.

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64. Yano Yoshihiko,JPX ; Noguchi Takao,JPX ; Nagano Katsuto,JPX, Method for forming oxide thin film and the treatment of silicon substrate.

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65. Nakato Tatsuo, Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant.

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66. Suh Jeong-Dae,KRX ; Sung Gun-Yong,KRX, Method for making a superconducting field-effect device with grain boundary channel.

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67. Sakaguchi Kiyofumi (c/o Canon Kabushiki Kaisha 30-2 ; 3-chome Shimomaruko ; Ohta-ku ; Tokyo JPX) Yonehara Takao (c/o Canon Kabushiki Kaisha 30-2 ; 3-chome Shimomaruko ; Ohta-ku ; Tokyo JPX) Nishida S, Method for producing semiconductor device substrate by bonding a porous layer and an amorphous layer.

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68. Bisaro Ren (Saint Maur des Fosses FRX) Friederich Alain (Paris FRX), Method for the manufacture, by epitaxy, of monocrystalline layers of materials with different lattice parameters.

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69. Shastry Shambhu K. (Framingham MA), Method of epitaxially growing compound semiconductor materials.

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70. Kizuki Hirotaka,JPX, Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface.

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71. Summerfelt Scott R. (Dallas TX), Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer.

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72. Abrokwah Jonathan K. ; Droopad Ravi ; Overgaard Corey D. ; Bowers Brian ; LaMacchia Michael P. ; Bernhardt Bruce A., Method of fabricating submicron FETs with low temperature group III-V material.

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73. Eshita Takashi (Inagi JPX) Mieno Fumitake (Kawasaki JPX) Furumura Yuji (Kawasaki JPX) Watanabe Takuya (Sagamihara JPX), Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers.

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74. Mooney John B. (San Jose CA) Sher Arden (San Carlos CA), Method of forming a low dislocation density semiconductor device.

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75. Belt Roger F. (Morristown NJ) Ings John B. (Boonton NJ), Method of forming oxidic high Tc superconducting materials on substantially lattice matched monocrystallin.

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76. Inoue Yasunori (Osaka JPX) Hanafusa Hiroshi (Hirakata JPX), Method of forming single crystalline magnesia spinel film.

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77. Ramdani Jamal ; Lebby Michael S. ; Holm Paige M., Method of growing gallium nitride on a spinel substrate.

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78. Pitt Gillies D. (Saffron Walden GB2) Greene Peter D. (Harlow GB2) Thrush Edward J. (Stansted Mountfitchet GB2) Whysall David H. (Harlow GB2), Method of making a Hall effect device.

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79. Abrokwah Jonathan K. (Tempe AZ) Huang Jenn-Hwa (Gilbert AZ) Ooms William J. (Chandler AZ), Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts.

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80. Calviello Joseph A. (Kings Park NY) Hickman Grayce A. (Hicksville NY), Method of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substr.

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81. Umeno Masayoshi (Nagoya JPX) Sakai Shiro (Nagoya JPX) Yahagi Shinichiro (Ohbu JPX), Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice.

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82. Abrokwah Jonathan K. (1963 E. Ranch Rd. Tempe AZ 85284) Huang Jenn-Hwa (1426 W. Tara Dr. Gilbert AZ 85234) Cho Jaeshin (507 E. Page Ave. Gilbert AZ 85234), Method of making ohmic contacts to a complementary III-V semiconductor device.

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83. Takeda Toshikazu (Nagaokakyo JPX) Ogiso Yoshifumi (Nagaokakyo JPX) Nakagawa Takuji (Nagaokakyo JPX) Senda Atsuo (Nagaokakyo JPX), Method of preparing InSb thin film.

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84. Mantl Siegfried,DEX ; Hollander Bernd,DEX ; Butz Rainer,DEX, Method of producing electronic, electrooptical and optical components.

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85. Lo Yu-Hwa, Methods for growing defect-free heteroepitaxial layers.

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86. Manning H. Montgomery, Methods of forming SOI insulator layers and methods of forming transistor devices.

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87. Ho Seng-Tiong ; Chu Daniel Yen ; Zhang Jian-Ping ; Wu Shengli, Microcavity semiconductor laser.

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88. Honjo Kazuhiko (Tokyo JPX), Microwave . millimeter wave transmitting and receiving module.

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89. Krishnaswamy S. Visvanathan (Monroeville PA) Horwitz Stuart S. (Randallstown MD) Moore Robert A. (Arnold MD), Microwave film bulk acoustic resonator and manifolded filter bank.

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90. Tsuzuki Koji,JPX ; Murakami Tsutomu,JPX ; Yamada Satoru,JPX ; Takeyama Yoshifumi,JPX ; Shimizu Koichi,JPX, Moldless semiconductor device and photovoltaic device module making use of the same.

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91. Calviello Joseph A. (Kings Park NY) Hickman Grayce A. (Hicksville NY), Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate.

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92. Vasudev Prahalad (290 Autumnwood St. Thousand Oaks CA 91360) D\Haenens Irnee J. (131 Paradise Cove Malibu CA 90265), Monolithic integration of silicon on insulator and gallium arsenide semiconductor technologies.

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93. Thornton Robert L. (East Palo Alto CA) Paoli Thomas L. (Los Altos CA), Monolithic two dimensional waveguide coupled cavity laser/modulator.

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94. Sevier Richard G. ; Andersen Eric L., Multi-direction optical data port.

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95. Corman David Warren ; Torkington Richard Scott ; Ma Stephen Chih-Hung ; Cook Dean Lawrence ; Brice-Heames Kenneth, Multi-substrate radio-frequency circuit.

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96. Yano Yoshihiko,JPX ; Noguchi Takao,JPX, Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film.

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97. Hawrylo Frank Z. (Trenton NJ), Multiple double heterojunction buried laser device.

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98. Nakamura Shuji,JPX ; Nagahama Shinichi,JPX ; Iwasa Naruhito,JPX ; Kiyoku Hiroyuki,JPX, Nitride semiconductor light-emitting device.

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99. Mehrgardt Soenke (March-Meuershausen DEX) Blossfeld Lothar (Freiburg-Hochdorf DEX), Offset-compensated hall sensor having plural hall detectors having different geometrical orientations and having switcha.

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100. May Paul (Cambridge GBX) Davis Gillian Margaret (Oxfordshire GBX), Optical apparatus.

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101. Groger Howard P. (Gainesville FL) Lo Peter (Blacksburg VA) Churchill Russell J. (Radford VA) Weiss Martin (New Port Richey FL) Luo Shufang (Blacksburg VA), Optical chemical sensor and method using same employing a multiplicity of fluorophores contained in the free volume of a.

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102. Chandonnet Alain,CAX ; Fougeres Andre,CAX ; Larose Gilles,CAX ; Painchaud Yves,CAX, Optical device employing edge-coupled waveguide geometry.

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103. Henmi Naoya,JPX, Optical network, optical division and insertion node and recovery system from network failure.

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104. Frigo Nicholas J., Optical node system for a ring architecture and method thereof.

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105. Nashimoto Keiichi (Minami Ashigara JPX), Oriented conductive film and process for preparing the same.

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106. Nashimoto Keiichi (Kanagawa JPX), Oriented ferroelectric thin film.

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107. Yano Yoshihiko,JPX ; Noguchi Takao,JPX, Oxide thin film, electronic device substrate and electronic device.

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108. Summerfelt Scott R. (Dallas TX), Pb/Bi-containing high-dielectric constant oxides using a non-P/Bi-containing perovskite as a buffer layer.

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109. Tomich John L., Photonic home area network fiber/power insertion apparatus.

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110. Ho Seng-Tiong, Photonic-well Microcavity light emitting devices.

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111. Ella Juha,FIX, Piezoelectric resonator structures with a bending element performing a voltage controlled switching function.

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112. Kramer Kane N. (Oaktree Lodge ; Arkley Barnet ; Hertfordshire GBX) Campbell James S. (7 ; Alwyne Place London ; N.1. GBX), Portable data processing and storage system.

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113. Beranek Mark W. ; Charles George E. ; Foley Barbara M. ; Lilienthal ; II Peter F. ; Shahid Muhammed A., Precision alignment of optoelectronic devices.

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114. McKee Rodney A. (Kingston TN) Walker Frederick J. (Oak Ridge TN), Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process.

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115. McKee Rodney A. (Kingston TN) Walker Frederick J. (Oak Ridge TN), Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process.

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116. Akasaki Isamu (Nagoya JPX) Sawaki Nobuhiko (Nagoya JPX), Process for growing III-V compound semiconductors on sapphire using a buffer layer.

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117. McKee Rodney A. (Kingston TN) Walker Frederick J. (Oak Ridge TN), Process for growing a film epitaxially upon an oxide surface and structures formed with the process.

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118. Yamagata Kenji (Kawasaki JPX) Yonehara Takao (Atsugi JPX), Process of fabricating a semiconductor substrate.

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119. Leobandung Effendi ; Sadana Devendra K. ; Schepis Dominic J. ; Shahidi Ghavam, Process of fabricating planar and densely patterned silicon-on-insulator structure.

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120. Ariyoshi Hisashi (Tokyo JPX) Kasanami Toru (Kyoto JPX) Fukuda Susumu (Osaka JPX), Producing a compound semiconductor device on an oxygen implanted silicon substrate.

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121. Yoshizawa Masahiro (Isehara JPX) Sakurai Tetsuma (Tokyo JPX), Production management system and its application method.

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122. Huang Kai-Feng (Shenchu NJ CNX) Jewell Jack L. (Bridgewater NJ) McCall ; Jr. Samuel L. (Gillette NJ) Tai Kuochou (North Plainfield NJ), Quantum well vertical cavity laser.

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123. Aslam Mohammad (Farmington Hills MI) Logothetis Eleftherios M. (Birmingham MI) Soltis Richard E. (Redford MI), Rapid thermal annealing of superconducting oxide precursor films on Si and SiO₂ substrates.

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124. Heremans Joseph P. (Troy MI) Partin Dale L. (Romeo MI) Thrush Christopher M. (Shelby Township MI), Rare earth slab doping of group III-V compounds.

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125. Gilboa Yitzhak Eric ; Brosilow Benjamin,ILX ; Levy Sagy ; Spielberg Hedvi ; Bransky Itai,ILX, Selective hemispherical grain silicon deposition.

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126. Morimoto Kiyoshi (Mobara JPX) Takagi Toshinori (Nagaokakyo JPX), Semiconductor device.

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127. Suzuki Katumi (Tokyo JPX), Semiconductor device having an integrated circuit formed on a compound semiconductor layer.

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128. Scifres Donald R. (San Jose CA) Streifer William (Palo Alto CA), Semiconductor laser with integrated optical elements.

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129. Ohba Yasuo,JPX, Semiconductor light-emitting element and method for manufacturing the same.

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130. Ho Seng-Tiong ; Rafizadeh Deana, Semiconductor micro-resonator device.

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131. Chapple-Sokol Jonathan D. (Poughkeepsie NY) Subbanna Seshadri (Hopewell Junction NY) Tejwani Manu J. (Yorktown Heights NY), Semiconductor quantum dot light emitting/detecting devices.

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132. Shibasaki Ichiro (Fuji JPX) Kuze Naohiro (Fuji JPX) Iwabuchi Tatsuro (Fuji JPX) Nagase Kazuhiro (Fuji JPX), Semiconductor sensors and method for fabricating the same.

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133. Farrell Mark,CAX ; Ruda Harry Eugen,CAX ; Masaki Yuichi,CAX, Semiconductor supercapacitor system, method for making same and articles produced therefrom.

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134. Park Kyu-charn,KRX, Semiconductor-on-insulator substrates containing electrically insulating mesas.

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135. Wollesen Donald, Silicon oxide insulator (SOI) semiconductor having selectively linked body.

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136. Neville Connell George A. (Cupertino CA) Fenner David B. (Menlo Park CA) Boyce James B. (Los Altos CA) Fork David K. (Palo Alto CA), Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer.

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137. Connell George A. N. (Cupertino CA) Fenner David B. (Menlo Park CA) Boyce James B. (Los Altos CA) Fork David K. (Palo Alto CA), Silicon substrate having an epitaxial superconducting layer thereon and method of making same.

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138. McKee Rodney A. ; Walker Frederick Joseph, Silicon-integrated thin-film structure for electro-optic applications.

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139. Ellis-Monaghan John J. ; Voldman Steven H., Silicon-on-insulator and CMOS-on-SOI double film fabrication process with a coplanar silicon and isolation layer and adding a second silicon layer on one region.

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140. Chisholm Matthew F. (Oak Ridge TN) Kirchner Peter D. (Putnam Valley NY) Warren Alan C. (Peekskill NY) Woodall Jerry M. (Bedford NY), Strained defect-free epitaxial mismatched heterostructures and method of fabrication.

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141. Oishi Akira (Tokyo JPX) Usui Toshio (Tokyo JPX) Teshima Hidekazu (Tokyo JPX) Morishita Tadataka (Tokyo JPX), Substrate material for the preparation of oxide superconductors.

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142. Wanlass Mark W. (Golden CO) Sheldon Peter (Lakewood CO), Substrate structures for InP-based devices.

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143. Yano Yoshihiko,JPX ; Noguchi Takao,JPX, Substrate structures for electronic devices.

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144. Fork David K. (2110 Ash St. Palo Alto CA 94306), Superconducting thin films on epitaxial magnesium oxide grown on silicon.

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145. Sheldon Peter (Lakewood CO), System for monitoring the growth of crystalline films on stationary substrates.

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146. Li Li ; Westmoreland Donald L. ; Hawthorne Richard C. ; Torek Kevin, System for wafer cleaning.

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147. Tetsuzo Yoshimura ; Yashuhito Takahashi ; Masaaki Inao ; Michael G. Lee ; William Chou ; Solomon I. Beilin ; Wen-chou Vincent Wang ; James J. Roman ; Thomas J. Massingill, Systems based on opto-electronic substrates with electrical and optical interconnections and methods for making.

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148. Paoli Thomas L. ; Beernink Kevin J., Transversely injected multiple wavelength diode laser array formed by layer disordering.

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149. Oakley William S. (San Jose CA), Two dimensional electro-optic modulator array.

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150. Yoshikawa Takashi,JPX ; Kurihara Kaori,JPX ; Kosaka Hideo,JPX, VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices.

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151. Colbourne Paul,CAX ITX K2G 3Y6 ; Obhi Jasvinder,CAX ITX K2J 4N6 ; Teitelbaum Neil,CAX ITX K1S 5C4, Variable optical attenuator.

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152. Newns Dennis Merton, Very thin film capacitor for dynamic random access memory (DRAM).

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153. Ikeda Kyoichi (Tokyo JPX) Watanabe Tetsuya (Tokyo JPX) Higashino Yasushi (Tokyo JPX), Vibratory transducer.

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154. Pan Jing-Jong, Wavelength stabilization of laser source using fiber Bragg grating feedback.

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