초록 ▼

An aftermarket kit comprised of protective and decorative vehicle body panels for attachment to existent vehicle body structures. The panels include a rigid, resilient substrate layer, such as ABS, to provide increased resistant of a vehicle provided with the panels to damage from impacts with other

An aftermarket kit comprised of protective and decorative vehicle body panels for attachment to existent vehicle body structures. The panels include a rigid, resilient substrate layer, such as ABS, to provide increased resistant of a vehicle provided with the panels to damage from impacts with other objects. The panels also include a decorative layer visible through an overlying protective layer. The decorative layer provides the appearance of desirable materials, such as wood or carbon fiber and, in certain versions, includes wood and/or carbon fiber material. The protective layer provides increased resistance of the panels to damage from impinging ultraviolet radiation. The panels can optionally be formed in complex three-dimensional concave and convex curves to provide additional aesthetic appeal and to better conform to complex vehicle contours.

대표청구항 ▼

An aftermarket kit comprised of protective and decorative vehicle body panels for attachment to existent vehicle body structures. The panels include a rigid, resilient substrate layer, such as ABS, to provide increased resistant of a vehicle provided with the panels to damage from impacts with other

An aftermarket kit comprised of protective and decorative vehicle body panels for attachment to existent vehicle body structures. The panels include a rigid, resilient substrate layer, such as ABS, to provide increased resistant of a vehicle provided with the panels to damage from impacts with other objects. The panels also include a decorative layer visible through an overlying protective layer. The decorative layer provides the appearance of desirable materials, such as wood or carbon fiber and, in certain versions, includes wood and/or carbon fiber material. The protective layer provides increased resistance of the panels to damage from impinging ultraviolet radiation. The panels can optionally be formed in complex three-dimensional concave and convex curves to provide additional aesthetic appeal and to better conform to complex vehicle contours. r, and wherein some of the CVC circuits are positioned at the top left corner and bottom right corner. 6. The memory device according to claim 5, wherein the order of the top right corner CVC circuits is reversed from the order of the bottom left corner CVC circuits. 7. The memory device according to claim 5, wherein the order of the top left corner CVC circuits is reversed from the order of the bottom right corner CVC circuits. 8. The memory device according to claim 1 wherein each memory cell is programmable by running a write current through a first and second conductive line. 9. The memory device according to claim 8 wherein each memory cell comprises a magnetic stack. 10. The memory device according to claim 9 wherein the device comprises a magnetoresistive random access memory (MRAM). 11. A memory device having an array of memory cells coupled to a plurality of first and second conductive lines, the memory device comprising: at least one current/voltage control (CVC) circuit coupled to each end of the first and second conductive lines, each CVC circuit including a current source and a current drain, wherein the CVC circuits are adapted to write information to the memory cells by applying a current from one CVC circuit current source to a CVC circuit current drain at the opposite end of the first and second conductive lines, wherein the CVC circuits are arranged so that the length of the first and second conductive lines between the current source and current drain of opposing CVC circuits is substantially the same for each memory cell written to. 12. The memory device according to claim 11, wherein the array comprises a left vertical edge, a right vertical edge, a bottom horizontal edge, and a top horizontal edge, wherein some of the CVC circuits are positioned along the vertical edges of the array, and wherein some of the CVC circuits are positioned along the horizontal edges of the array. 13. A memory device having an array of memory cells coupled to a plurality of first and second conductive lines, the memory device comprising: at least one current/voltage control (CVC) circuit coupled to each end of the first and second conductive lines, each CVC circuit including a current source and a current drain, wherein the CVC circuits are adapted to write information to the memory cells by applying a current from one CVC circuit to a CVC circuit at the opposite end of the first and second conductive lines, wherein the CVC circuits arc arranged so that the length of the first and second conductive lines between opposing CVC circuits is substantially the same for each memory cell written to, wherein the array comprises a left vertical edge, a right vertical edge, a bottom horizontal edge, and a top horizontal edge, wherein some of the CVC circuits are positioned along the vertical edges of the array, wherein some of the CVC circuits are positioned along the horizontal edges of the array, wherein the order of the left vertical edge CVC circuits is reversed from the order of the right vertical edge CVC circuits, and wherein the order of the bottom horizontal edge CVC circuits is reversed from the order of the top horizontal edge CVC circuits. 14. The memory device according to claim 11, wherein the array comprises a top right corner, a bottom right corner, a top left corner, and a bottom left corner, wherein some of the CVC circuits are positioned at the top right corner and bottom left corner, and wherein some of the CVC circuits are positioned at the top left corner and bottom right corner. 15. A memory device having an array of memory cells coupled to a plurality of first and second conductive lines, the memory device comprising: at least one current/voltage control (CVC) circuit coupled to each end of the first and second conductive lines, each CVC circuit including a current source and a current drain, wherein the CVC circuits are adapted to write information to the memory cells by applying a current from one CV