초록 ▼

In the semiconductor device manufactured by the manufacturing method of the present invention, the tungsten layer resistant to an impulsive force is formed without the oxide film layer existing below the second pad. Hence, if an external force is applied to the second pad through an opening upon bon

In the semiconductor device manufactured by the manufacturing method of the present invention, the tungsten layer resistant to an impulsive force is formed without the oxide film layer existing below the second pad. Hence, if an external force is applied to the second pad through an opening upon bonding or the like, cracks are hard to occur. Accordingly, it is possible to provide a semiconductor device high in mechanical strength and reliability and a method of manufacturing.

대표청구항 ▼

In the semiconductor device manufactured by the manufacturing method of the present invention, the tungsten layer resistant to an impulsive force is formed without the oxide film layer existing below the second pad. Hence, if an external force is applied to the second pad through an opening upon bon

In the semiconductor device manufactured by the manufacturing method of the present invention, the tungsten layer resistant to an impulsive force is formed without the oxide film layer existing below the second pad. Hence, if an external force is applied to the second pad through an opening upon bonding or the like, cracks are hard to occur. Accordingly, it is possible to provide a semiconductor device high in mechanical strength and reliability and a method of manufacturing. 06998, 19890200, Vinter et al., 357/022; US-4851886, 19890700, Lee et al., 257/017; US-4903092, 19900200, Luryi et al., 257/183.1; US-4945393, 19900700, Beltram et al., 357/023.5; US-5021841, 19910600, Leburton et al., 357/022; US-5032699, 19910700, Takagi et al.; US-5032877, 19910700, Bate, 257/104; US-5055891, 19911000, Moll et al., 257/201; US-5093699, 19920300, Weichold et al.; US-5130763, 19920700, Delhaye et al., 357/022; US-5162880, 19921100, Hazama, 257/106; US-5189499, 19930200, Izumi et al., 257/215; US-5250815, 19931000, Battersby et al., 257/498; US-5258624, 19931100, Battersby et al., 257/011; US-5302838, 19940400, Roenker et al., 257/014; US-5357134, 19941000, Shimoji, 257/325; US-5390145, 19950200, Nakasha et al., 365/159; US-5477169, 19951200, Shen et al., 326/055; US-5543652, 19960800, Ikeda et al., 257/377; US-5606177, 19970200, Wallace et al., 257/025; US-5633178, 19970500, Kalnitsky, 438/288; US-5675157, 19971000, Battersby, 257/011; US-5689458, 19971100, Kuriyama, 365/159; US-5698997, 19971200, Williamson, III et al.; US-5705827, 19980100, Baba et al., 257/046; US-5742092, 19980400, Zotov et al., 257/610; US-5770958, 19980600, Arai et al., 327/114; US-5773996, 19980600, Takao, 326/135; US-5804475, 19980900, Meyer et al., 438/172; US-5869845, 19990200, van der Wagt et al.; US-5883549, 19990300, De Los Santos, 331/107; US-5883829, 19990300, Van der Wagt, 365/159; US-5895934, 19990400, Harvey et al., 257/199; US-5903170, 19990500, Kulkarni et al., 326/134; US-5907159, 19990500, Roh et al.; US-5936265, 19990800, Koga; US-5953249, 19990900, van der Wagt; US-5959328, 19990900, Krautschneider et al., 257/314; US-5962864, 19991000, Leadbeater et al., 257/025; US-6015978, 20000100, Yuki et al., 257/025; US-6077760, 20000600, Fang et al., 438/492; US-6091077, 20000700, Morita et al., 257/025; US-6104631, 20000800, El-Sharaway et al., 365/154; US-6194303, 20010200, Alphenaar et al., 438/141; US-6246606, 20010600, Forbes et al.; US-6294412, 20010900, Krivokapic; US-6301147, 20011000, El-Sharawy et al.; US-6303942, 20011000, Farmer; US-20010005327, 20010600, Duane et al.; US-20010019137, 20010900, Koga et al.