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A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased pri

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3,dimethylsilane, (CH3)2SiH2,or 1,1,3,3-tetramethyl-disiloxane, (CH3)2--SiH--O--SiH--(CH3)2,and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.

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A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased pri

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3,dimethylsilane, (CH3)2SiH2,or 1,1,3,3-tetramethyl-disiloxane, (CH3)2--SiH--O--SiH--(CH3)2,and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle. m 1, further comprising, diffusing a remaining portion of the (n-1)-th diffused gas an n-th time by contacting the gas and an n-th diffuser disposed between the (n-1)-th diffuser and the work piece, by dispersing the gas along side directions different than the flow direction; and guiding a portion of the n-th diffused gas through the outlet of the dispersion head and toward the work piece arranged in the chamber, wherein n is a natural number greater than 2. 3. The method as claimed in claim 2, wherein the diffusing of the gas the first time occurs in a first proximity at an upper central portion of the dispersion head, and the diffusing of the gas the second time occurs in a second proximity radially outward of, and below, the first proximity. 4. The method as claimed in claim 3, wherein the diffusing of the gas the n-th time occurs in an n-th proximity radially outward of, and below, the (n-1)-th proximity. 5. The method as claimed in claim 1, wherein the chamber is a plasma reaction chamber, and wherein the guiding steps form a film on the work piece using a plasma reaction. 6. The method as claimed in claim 1, wherein the chamber is a plasma reaction chamber, and wherein the guiding steps etch a film formed on the work piece using a plasma reaction.