초록 ▼

A semiconductor structure including a first substrate, and an epitaxial layer bonded to the substrate. The epitaxial layer has a threading dislocation density of less than 107cm-2and an in-plane lattice constant that is different from that of the first substrate and a second substrate on which the e

A semiconductor structure including a first substrate, and an epitaxial layer bonded to the substrate. The epitaxial layer has a threading dislocation density of less than 107cm-2and an in-plane lattice constant that is different from that of the first substrate and a second substrate on which the epitaxial layer is fabricated. In another embodiment, there is provided a method of processing a semiconductor structure including providing a first substrate; providing a layered structure including a second substrate having an epitaxial layer provided thereon, the epitaxial layer having an in-plane lattice constant that is different from that of the first substrate and a threading dislocation density of less than 107cm-2; bonding the first substrate to the layered structure; and removing the second substrate.

대표청구항 ▼

A semiconductor structure including a first substrate, and an epitaxial layer bonded to the substrate. The epitaxial layer has a threading dislocation density of less than 107cm-2and an in-plane lattice constant that is different from that of the first substrate and a second substrate on which the e

A semiconductor structure including a first substrate, and an epitaxial layer bonded to the substrate. The epitaxial layer has a threading dislocation density of less than 107cm-2and an in-plane lattice constant that is different from that of the first substrate and a second substrate on which the epitaxial layer is fabricated. In another embodiment, there is provided a method of processing a semiconductor structure including providing a first substrate; providing a layered structure including a second substrate having an epitaxial layer provided thereon, the epitaxial layer having an in-plane lattice constant that is different from that of the first substrate and a threading dislocation density of less than 107cm-2; bonding the first substrate to the layered structure; and removing the second substrate. spect to the weight of the binder. 6. Hydraulic binder according to claim 5, wherein the lime is added to the clinker in quantities between 3% and 6% by weight with the respect to the weight of the binder. 7. Hydraulic binder according to claim 6, wherein the lime is added to the clinker in quantities between 4% by weight with the respect to the weight of the binder. 8. Hydraulic binder according to claim 1, wherein the lime is calcium oxide in powder or clods. 9. The hydraulic binder according to claim 1, wherein said clinker comprising C11A7f further comprises C3S, C2S, and C4AF. 10. Hydraulic binder according to claim 1, further comprising sodium bicarbonate added to said clinker, lime and sodium aluminate. 11. Hydraulic binder according to claim 10, wherein the sodium bicarbonate is added in quantities from 0.1% to 1% by weight with respect to the weight of the binder. 12. Hydraulic binder according to claim 11, wherein the sodium bicarbonate is added in quantities equal to 0.4% by weight with respect to the total weight of binder. 13. Hydraulic binder according to claim 1, further comprising common cement (UNI-ENV 197-1) or Portland clinker in quantities from 5% and 20% by weight with respect to the weight of the binder. 14. Process for preparation of the hydraulic binder according to claim 1, wherein said lime, sodium aluminate and clinker are ground simultaneously. 15. Process for the preparation of the hydraulic binder according to claim 1, wherein said lime, sodium aluminate and clinker are ground separately and said lime and said sodium aluminate are added successively to said clinker. 16. Process according to claim 14, where said sodium aluminate is added in the form of a water solution. 17. Dry pre-mix for cement compositions containing the hydraulic binder according to claim 1, and one or more inert additives, and optionally other cement additives. 18. A mixture comprising the hydraulic binder according to claim 1, water and, optionally, aggregates. 19. Mortar comprising the mixture according to claim 18 and fine aggregates. 20. Concrete comprising the mixture according to claim 18, fine aggregates and coarse aggregates. 21. Concrete paste comprising the hydraulic binder according to claim 1 and water without aggregates. 22. A process for the preparation of quick-setting cement mixes comprising mixing the hydraulic binder according to claim 1 with water. 23. Process for the preparation of concrete products, cement products, cement adhesives, subsurfaces for pavement, quick-setting mortar and concrete, sprayable mortar and concrete, materials for foundry moulds, mixes for the immobilization of volatile wastes, said process comprising the step of mixing the hydraulic binder according to claim 1 with water. 24. Process for the placing of road manhole covers, fixing steel brackets, plumbing pipes and hinges, laying and attachment of wooden and metal frames, laying of boxes and sheathing for electrical installations, sealing of cement conduits, sewer and cisterns, blocking of water infiltration, re-paving of road surfaces or airstrips, covering of roofs, mortar or concrete spraying in tunnels, lining of slopes and slanting grounds, and in the preparation of concrete products, said process comprising the step of mixing the hydraulic binder according to claim 1 with water. 25. A process for the preparation of hydraulic binder according to claim 10 wherein lime, sodium aluminate, clinker and sodium bicarbonate are ground simultaneously with the clinker. 26. A process for the preparation of hydraulic binder according to claim 10 wherein lime, sodium aluminate, clinker and sodium bicarbonate are ground separately and added successively with the clinker. 27. The hydraulic binder according to claim 9, wherein said clinker comprises from 12% to 18% by weight of C11A7f, from 40% to 45% by weight of C3S, from 25% to 30% by weight of C2S, and from 6% to 8% by weight of C4AF.