초록 ▼

A control apparatus and method for efficiently controlling the amount of heat generated by a fuel cell processor in a fuel cell system by determining a temperature error between actual and desired fuel processor temperatures. The temperature error is converted to a combustor fuel injector command si

A control apparatus and method for efficiently controlling the amount of heat generated by a fuel cell processor in a fuel cell system by determining a temperature error between actual and desired fuel processor temperatures. The temperature error is converted to a combustor fuel injector command signal or a heat dump valve position command signal depending upon the type of temperature error. Logic controls are responsive to the combustor fuel injector command signals and the heat dump valve position command signal to prevent the combustor fuel injector command signal from being generated if the heat dump valve is opened or, alternately, from preventing the heat dump valve position command signal from being generated if the combustor fuel injector is opened.

대표청구항 ▼

A control apparatus and method for efficiently controlling the amount of heat generated by a fuel cell processor in a fuel cell system by determining a temperature error between actual and desired fuel processor temperatures. The temperature error is converted to a combustor fuel injector command si

A control apparatus and method for efficiently controlling the amount of heat generated by a fuel cell processor in a fuel cell system by determining a temperature error between actual and desired fuel processor temperatures. The temperature error is converted to a combustor fuel injector command signal or a heat dump valve position command signal depending upon the type of temperature error. Logic controls are responsive to the combustor fuel injector command signals and the heat dump valve position command signal to prevent the combustor fuel injector command signal from being generated if the heat dump valve is opened or, alternately, from preventing the heat dump valve position command signal from being generated if the combustor fuel injector is opened. f Si-based quantum wells with neighboring confinement structure," Semicon. Sci. Technol. (1997) (abstract). Konig et al., "Design Rules for n-Type SiGe Hetero FETs," Solid State Electronics, vol. 41, No. 10 (1997), pp. 1541-1547. Ishikawa et al., "Creation of Si-Ge-based SIMOX structures by low energy oxygen implantation," Proceedings 1997 IEEE International SOI Conference (Oct. 1997) pp. 16-17. Maiti et al., "Strained-Si heterostructure field effect transistors," Semicond. Sci. Technol., vol. 13 (1998) pp. 1225-1246. Borenstein et al., "A New Ultra-Hard Etch-Stop Layer for High Precision Micromachining," Proceedings of the1999 12thIEEE International Conference on Micro Electro Mechanical Systems (MEMs) (Jan. 17-21, 1999) pp. 205-210. Ishikawa et al., "SiGe-on-insulator substrate using SiGe alloy grown Si(001)," Applied Physics Letters, vol. 75, No. 7 (Aug. 16, 1999) pp. 983-985. Mizuno et al., "Electron and Hold Mobility Enhancement in Strained-Si MOSFET's on SiGe-on-Insulator Substrates Fabricated by SIMOX Technology," IEEE Electron Device Letters, vol. 21, No. 5 (May 2000) pp. 230-232. Yeo et al., "Nanoscale Ultra-Thin-Body Silicon-on-Insulator P-MOSFET with a SiGe/Si Heterostructure Channel," IEEE Electron Device Letters, vol. 21, No. 4 (Apr. 2000) pp. 161-163. Huang et al., "High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate," Applied Physics Letters, vol. 76, No. 19 (May 8, 2000) pp. 2680-2682. Hackbarth et al., "Alternatives to thick MBE-grown relaxed SiGe buffers," Thin Solid Films, vol. 369, No. 1-2 (Jul. 2000) pp. 148-151. Barradas et al., "RBS analysis of MBE-grown SiGE/(001) Si heterostructures with thin, high Ge content SiGe channels for HMOS transistors," Modern Physics Letters B (2001) (abstract).