초록 ▼

In a preferred embodiment, a linear actuator, including: front and rear end bells; a stator structure; a rotor structure having first and second bearings journaled, respectively, in cavities formed in inner surfaces of the front and rear end bells; a captivation sleeve having its proximal end thread

In a preferred embodiment, a linear actuator, including: front and rear end bells; a stator structure; a rotor structure having first and second bearings journaled, respectively, in cavities formed in inner surfaces of the front and rear end bells; a captivation sleeve having its proximal end threadedly inserted in a cavity formed in an outer surface of the front end bell; and all foregoing elements being coaxially aligned to permit the insertion therethrough of a lead screw.

대표청구항 ▼

In a preferred embodiment, a linear actuator, including: front and rear end bells; a stator structure; a rotor structure having first and second bearings journaled, respectively, in cavities formed in inner surfaces of the front and rear end bells; a captivation sleeve having its proximal end thread

In a preferred embodiment, a linear actuator, including: front and rear end bells; a stator structure; a rotor structure having first and second bearings journaled, respectively, in cavities formed in inner surfaces of the front and rear end bells; a captivation sleeve having its proximal end threadedly inserted in a cavity formed in an outer surface of the front end bell; and all foregoing elements being coaxially aligned to permit the insertion therethrough of a lead screw. aid die carrier and said electro-optics cell for fixing said electro-optics cell on a surface of said transparent layer, wherein said transparent layer is selected from the group consisted of an ITO layer, a CTO layer, a ZnO layer, an IZO layer, and a NiO layer; and a light reflective layer located optionally in said transparent layer and between said transparent layer and said die carrier, wherein said light reflective layer has a pattern for changing an emitted light, which is generated by said electro-optics cell, to a reflected light and preventing said reflected light from going back to an active layer of said electro-optics cell. 12. A The structure according to claim 11, wherein said die carrier is a through-hold lead frame, a print circuit board, or a header. 13. The structure according to claim 11, wherein said electro-optics cell comprises a transparent conducting substrate and an epitaxial structure, and said first electrode and said second electrode are located on the same side or the different sides of said transparent conducting substrate. 14. The structure according to claim 11, wherein said electro-optics cell comprises an insulating substrate and an epitaxial structure, and said first electrode and said second electrode are located on a plurality of different epitaxial layers of said epitaxial structure. 15. The structure according to claim 11, wherein said pattern comprises a plurality of hemispheric lifts, a plurality of hemispheric and sinking forms, or a plurality of grating structures. 16. A structure of a high efficiency electro-optics device, comprising: a die carrier; an electro-optics cell having a first electrode and a second electrode electrically connected respectively to said die carrier and a lead frame having an opposite polarity with respect to said first electrode and said second electrode; a transparent layer located between said die carrier and said electro-optics cell for fixing said electro-optics cell on a surface of said transparent layer; and a light reflective layer located optionally in said transparent layer and between said transparent layer and said die carrier, wherein said light reflective layer has a pattern for changing an emitted light, which is generated by said electro-optics cell, to a reflected light and preventing said reflected light from going back to an active layer of said electro-optics cell, wherein said pattern comprises a plurality of hemispheric lifts, a plurality of hemispheric and sinking forms, or a plurality of grating structures. 17. The structure according to claim 16, wherein said die carrier is a through-hold lead frame, a print circuit board, or a header. 18. The structure according to claim 16, wherein said electro-optics cell comprises a transparent conducting substrate and an epitaxial structure, and said first electrode and said second electrode are located on the same side or the different sides of said transparent conducting substrate. 19. The structure according to claim 16, wherein said transparent layer is selected from the group consisted of an ITO layer, a CTO layer, a ZnO layer, an IZO layer, and a NiO layer. 20. The structure according to claim 16, wherein said electro-optics cell comprises an insulating substrate and an epitaxial structure, and said first electrode and said second electrode are located on a plurality of different epitaxial layers of said epitaxial structure.