초록 ▼

Devices for excluding aneurysms and treating atherosclerotic disease, for intra-aneurysmal occlusion; and devices for preventing distal emboli. The devices are generally pliable and collapsible thin film devices which can be delivered via a microcatheter into the desired location where they are depl

Devices for excluding aneurysms and treating atherosclerotic disease, for intra-aneurysmal occlusion; and devices for preventing distal emboli. The devices are generally pliable and collapsible thin film devices which can be delivered via a microcatheter into the desired location where they are deployed and undergo either a shape memory phase transformation or in situ polymerization to assume the stable configuration of a permanent endoluminal prosthesis. Prior to being caused to assume their final shape, the devices remain soft, collapsible and pliable to ensure atraumatic delivery through the vascular system. Upon reaching the endoluminal defect in the vessel, the device is extruded from the microcatheter. Devices are also provided for retrieving clots.

대표청구항 ▼

1. A fenestrated endovascular device made consisting of a sputtered nickel titanium alloy having a thickness of from about 0.5 to about 150 microns wherein the device has: a. a martensitic state; b. an austenitic state in which the device assumes a preformed, expanded shape, and c. a thin-film

1. A fenestrated endovascular device made consisting of a sputtered nickel titanium alloy having a thickness of from about 0.5 to about 150 microns wherein the device has: a. a martensitic state; b. an austenitic state in which the device assumes a preformed, expanded shape, and c. a thin-film transition temperature at which the device undergoes a transition from its martensitic state to its austentitic state. 2. The device according to claim 1, wherein the alloy has a thickness of from about 2 to about 50 microns. 3. The device according to claim 1, wherein the alloy has an amorphous, chaotic, and disordered microcrystalline structure. 4. The device according to claim 1 wherein the transition temperature is less than about 35° and greater than about 25° C. 5. The device according to claim 4, wherein the transition phase temperature is from about 30-35° C.