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A temperature-controlled semiconductor wafer chuck system, the chuck being configured for mounting on a prober stage of a wafer probe test station. The chuck having a top surface and a bottom surface including a heat sink configuration for removal of thermal energy from the chuck. A primary heater c

A temperature-controlled semiconductor wafer chuck system, the chuck being configured for mounting on a prober stage of a wafer probe test station. The chuck having a top surface and a bottom surface including a heat sink configuration for removal of thermal energy from the chuck. A primary heater configured to add heat to the chuck is adjacent the top surface of the chuck. A secondary heater is adjacent to the bottom of the chuck, whereby the temperature of the top surface of the chuck and the bottom of the chuck can be independently controlled. The chuck may include a plurality of layers above the heat sink which may be connected to accommodate differential expansion and contraction, thereby minimizing distortion of the chuck due to thermal effects. The heat sink and associated layers are integrally connected and are configured to stiffen the chuck to resist deformation due to forces applied to the chuck by probe pins. Still further, the chuck has cooling channels closer to the top surface than the heater and is disclosed to reduce the thermal resistance of the chuck. Furthermore, a chuck with a heater having double walled construction is disclosed whereby the inner wall is grounded and insulated from the outer wall to shield the chuck from voltage and electrical noise from the heater. Furthermore, a chuck with a prober adapter with a thermal insulator, secondary heater and cooling channels to offset the heat generated by the chuck and maintain the prober adapter at some preferred operating temperature.

대표청구항 ▼

A temperature-controlled semiconductor wafer chuck system, the chuck being configured for mounting on a prober stage of a wafer probe test station. The chuck having a top surface and a bottom surface including a heat sink configuration for removal of thermal energy from the chuck. A primary heater c

A temperature-controlled semiconductor wafer chuck system, the chuck being configured for mounting on a prober stage of a wafer probe test station. The chuck having a top surface and a bottom surface including a heat sink configuration for removal of thermal energy from the chuck. A primary heater configured to add heat to the chuck is adjacent the top surface of the chuck. A secondary heater is adjacent to the bottom of the chuck, whereby the temperature of the top surface of the chuck and the bottom of the chuck can be independently controlled. The chuck may include a plurality of layers above the heat sink which may be connected to accommodate differential expansion and contraction, thereby minimizing distortion of the chuck due to thermal effects. The heat sink and associated layers are integrally connected and are configured to stiffen the chuck to resist deformation due to forces applied to the chuck by probe pins. Still further, the chuck has cooling channels closer to the top surface than the heater and is disclosed to reduce the thermal resistance of the chuck. Furthermore, a chuck with a heater having double walled construction is disclosed whereby the inner wall is grounded and insulated from the outer wall to shield the chuck from voltage and electrical noise from the heater. Furthermore, a chuck with a prober adapter with a thermal insulator, secondary heater and cooling channels to offset the heat generated by the chuck and maintain the prober adapter at some preferred operating temperature. m 6, in which the control unit has a memory which can be connected with the force sensor for storing a nominal value for the reaction force. 8. The apparatus of claim 7, in which the control unit has a displacement transducer for storing a reference position for the measuring head and for using this reference position to control the driving mechanism to set the measuring head at a position specified in relation to this reference position. 9. The apparatus or claim 7, in which the driving mechanism includes a stepping motor. 10. The apparatus of claim 7, in which the measuring head includes a capacitive measuring head. 11. The apparatus of claim 6, in which the control unit has a displacement transducer for storing a reference position for the measuring head and for using this reference position to control the driving mechanism to set the measuring head at a position specified in relation to this reference position. 12. The apparatus of claim 11, in which the driving mechanism includes a stepping motor. 13. The apparatus of claim 11, in which the measuring head includes a capacitive measuring head. 14. The apparatus of claim 6, in which the driving mechanism includes a stepping motor. 15. The apparatus of claim 6, in which the measuring head includes a capacitive measuring head. 16. The apparatus of claim 5, in which the driving mechanism includes a stepping motor. 17. The apparatus of claim 16, in which the measuring head includes a capacitive measuring head. 18. The apparatus of claim 5, in which the measuring head includes a capacitive measuring head.