초록 ▼

A power plant includes a high temperature fuel cell, a volume expansion heat engine producing mechanical energy, and a combustion chamber coupled to receive from said fuel cell at least a portion of unconsumed fuel and apply high pressure combusted gases to the engine. A reformer can feed fuel to sa

A power plant includes a high temperature fuel cell, a volume expansion heat engine producing mechanical energy, and a combustion chamber coupled to receive from said fuel cell at least a portion of unconsumed fuel and apply high pressure combusted gases to the engine. A reformer can feed fuel to said fuel cell. A distributor distributes fuel cell exhaust fuel selectively to the reformer and the combustion chamber and varies the ratio of exhaust fuel fed to the reformer and combustion chamber in accordance with predetermined power desired from said fuel cell and engine.

대표청구항 ▼

A power plant includes a high temperature fuel cell, a volume expansion heat engine producing mechanical energy, and a combustion chamber coupled to receive from said fuel cell at least a portion of unconsumed fuel and apply high pressure combusted gases to the engine. A reformer can feed fuel to sa

A power plant includes a high temperature fuel cell, a volume expansion heat engine producing mechanical energy, and a combustion chamber coupled to receive from said fuel cell at least a portion of unconsumed fuel and apply high pressure combusted gases to the engine. A reformer can feed fuel to said fuel cell. A distributor distributes fuel cell exhaust fuel selectively to the reformer and the combustion chamber and varies the ratio of exhaust fuel fed to the reformer and combustion chamber in accordance with predetermined power desired from said fuel cell and engine. ing a pattern of second impedance elements on the second sheet electrically of highly conductive material; (q) forming a plurality of target holes through the second sheet of electrically highly conductive material; (r) attaching the second sheet of electrically highly conductive material to another side of the sheet of insulating material such that the second impedance elements are between the sheet of insulating material and the second sheet of electrically highly conductive material; (s) removing the second support from the second sheet of electrically highly conductive material; (t) applying an additional layer of a photoresist material onto the rear side of the second sheet of electrically highly conductive material; (u) imagewise exposing the additional layer of photoresist material thus forming image and nonimage areas, and then removing the nonimage areas while retaining the image areas; (v) etching away the portion of the second sheet of electrically highly conductive material underlying the removed nonimage areas of the photoresist material, and then optionally removing the image areas of the photoresist material thus leaving a pattern of second conductive lines of the electrically highly conductive material such that at least some of the second conductive lines contact at least some of the second impedance elements. 3. The process of claim 1 wherein in step (e) the removing of the image areas of the photoresist material is conducted. 4. The process of claim 2 wherein in step (v) the removing of the image areas of the photoresist material is conducted. 5. The process of claim 1 wherein the highly conductive material comprises copper, nickel, aluminum, gold, silver, brass or stainless steel. 6. The process of claim 1 wherein the impedance material comprises a resistive material. 7. The process of claim 6 wherein the resistive material comprises nickel, a nickel containing alloy, a semiconductor, or a combination of at least one metal or metal alloy and at least one insulator. 8. The process of claim 6 wherein the resistive material has a resistance of from about 25 to about 1000 ohms per square. 9. The process of claim 1 wherein the impedance material comprises a capacitive material. 10. The process of claim 9 wherein the capacitive material comprises a polymeric material, a metal oxide, a semiconductor material or a combination thereof. 11. The process of claim 9 wherein the capacitive material has a capacitance of from about 0.01 to about 3000 nanofarads per square centimeter. 12. The process of claim 1 wherein the support comprises a material capable of being ultrasonically bonded to the sheet of highly conductive material. 13. The process of claim 1 wherein the support is ultrasonically bonded to the sheet of electrically highly conductive material. 14. The process of claim 1 wherein the support comprises a metal, a polymer or a combination thereof. 15. The process of claim 1 wherein the support comprises aluminum. 16. The process of claim 1 wherein the support comprises stainless steel. 17. The process of claim 1 wherein the photoresist material is applied as a liquid. 18. The process of claim 1 wherein the photoresist material is applied as a dry film. 19. The process of claim 1 wherein the sheet of insulating material comprises an epoxy or polyimide. 20. The process of claim 1 wherein the sheet of insulating material comprises a thermoset or thermoplastic polymer with or without reinforcement. 21. The process of claim 1 wherein at least some of the impedance elements contact at least two conductive lines at different contact points of the impedance elements wherein the distance between the contact points range from about 0.025 mm to about 100 mm. 22. The process of claim 1 wherein the electrically highly conductive material comprises copper, the impedance material comprises nickel or a nickel alloy, and the support comprises aluminum. 23. The process of claim 1 wherein the electrically highly conductive