초록 ▼

A hybrid combined cycle power generation system for producing alternating current electric power. The system includes at least one industrial gas turbine and at least one aeroderivative turbine. The system may also include an HRSG and a steam turbine. Use of both an industrial gas turbine and an aer

A hybrid combined cycle power generation system for producing alternating current electric power. The system includes at least one industrial gas turbine and at least one aeroderivative turbine. The system may also include an HRSG and a steam turbine. Use of both an industrial gas turbine and an aeroderivative turbine permits the system to take advantage of the benefits of each type of turbine while diminishing the drawbacks associated with each type of turbine. The aeroderivative turbine is capable of quick startup and can therefore provide power relatively quickly. Thus the aeroderivative gas turbine can be relied on at startup to quickly begin producing power, while the industrial gas turbine, while the industrial gas turbine and steam turbine are brought online. Once online, the industrial gas turbine can be utilized for greater power production and longer running time. The aeroderivative turbine(s) may be used during periods of peak power demand and then shutdown when the demand decreases. In this way, both the industrial gas turbine and the steam turbine may operate at a relatively constant level, thereby increasing the stability and longevity of the system. Optional supplementary firing in the HRSGs can be utilized to produce additional steam which is directed to the steam turbine(s) to smooth transitions in power production levels as AD and IG turbines start and stop, or to produce additional power during short term peak power demand.

대표청구항 ▼

A hybrid combined cycle power generation system for producing alternating current electric power. The system includes at least one industrial gas turbine and at least one aeroderivative turbine. The system may also include an HRSG and a steam turbine. Use of both an industrial gas turbine and an aer

A hybrid combined cycle power generation system for producing alternating current electric power. The system includes at least one industrial gas turbine and at least one aeroderivative turbine. The system may also include an HRSG and a steam turbine. Use of both an industrial gas turbine and an aeroderivative turbine permits the system to take advantage of the benefits of each type of turbine while diminishing the drawbacks associated with each type of turbine. The aeroderivative turbine is capable of quick startup and can therefore provide power relatively quickly. Thus the aeroderivative gas turbine can be relied on at startup to quickly begin producing power, while the industrial gas turbine, while the industrial gas turbine and steam turbine are brought online. Once online, the industrial gas turbine can be utilized for greater power production and longer running time. The aeroderivative turbine(s) may be used during periods of peak power demand and then shutdown when the demand decreases. In this way, both the industrial gas turbine and the steam turbine may operate at a relatively constant level, thereby increasing the stability and longevity of the system. Optional supplementary firing in the HRSGs can be utilized to produce additional steam which is directed to the steam turbine(s) to smooth transitions in power production levels as AD and IG turbines start and stop, or to produce additional power during short term peak power demand. rminals are situated on the second major surface of the support member, and the first and second connection wires are provided on the second major surface of the support member. 4. The semiconductor device according to claim 1, wherein at least one pair of holes similar to the hole are formed in the support member such that they are opposed to each other and the holes are extending along and adjacent to sides of the support member. 5. The semiconductor device according to claim 1, wherein the support member is a tape. 6. The semiconductor device according to claim 1, further comprising a cushion member provided between the support member and the semiconductor chip. 7. The semiconductor device according to claim 1, wherein the first and second connection wires are formed of Cu foil plated with Au. 8. A support substrate used to form a semiconductor device, together with a semiconductor chip provided on the support substrate, comprising: a support member having first and second major surfaces and an elongate hole extending between the first and second major surfaces, the hole having first and second edges opposite to each other; a plurality of first external connection terminals provided along the first edge of the hole, the first external connection terminals each having one end located above the second major surface of the support member; a plurality of second external connection terminals provided along the first edge of the hole, the first external connection terminals each having one end located above the second major surface of the support member; a plurality of second external connection terminals provided along the second edge of the hole, the second external connection terminals each having one end located above the second major surface of the support member; and first and second connection wires formed of a conductive material, the first and second connection wires having respective first ends connected to the one ends of first and second external connection terminals respectively, and second ends located above the hole, the first and second connection wires being alternately arranged above the hole. 9. The support substrate according to claim 8, wherein the first and second external connection terminals extend through the support member such that the other end of each of the first and second external connection terminals is situated on the first major surface of the support member, and the first and second connection wires are provided on the first major surface of the support member. 10. The support substrate according to claim 8, wherein the other end of each of the first and second external connection terminals is situated on the second major surface of the support member, and the first and second connection wires are provided on the second major surface of the support member. 11. The support substrate according to claim 6, wherein at least one pair of holes similar to the hole are formed in the support member such that they are opposed to each other and the holes are extending along and adjacent to sides of the support member. 12. The support substrate according to claim 8, wherein the support member is a tape. 13. The support substrate according to claim 8, wherein the first and second connection wires are formed of Cu foil plated with Au. 14. The support substrate according to claim 8, wherein the second ends of the first and second connection wires bridge the hole, and each of the first and second connection wires has an indented portion located near the second end above the hole. ajn, Microwave Engineering Passive, Active and Non Reciprocal Circuits McGraw-Hill, pp. 65-85 (1992). Humpston "The Essential Role Of Gold In The Fabrication Of Microwave Electronics Systems", Gold Bulletin 32:75-79 (1999). Katyl et al."Electrical Design Concepts in Electronic Packaging", Principles of Electronic Packaging, Seraphim, D. P. Lasky, R. C. and Li, C. Y. Eds., McGraw-Hill, pp. 69-102 (1989). Pease et al. "Physical Limits to the Useful Packaging Density of Electronic Systems", IBM J. Res. Develop. 32:636-646 (1988). Solomon et al. "Design Optimization of BGA Packages," Semicon West 2000 Proceedings pp. A1-A6 (2000). Sutherland "As edge speeds increase, wires become transmission lines", EDN Oct. 14, 1999, pp. 75-94. Zheng, "Full Wave Electromagnetic Simulation of S-Parameter SPICE Simulation for High Speed Digital Interconnects", IMAPS Advanced Technology Workshop on Future Digital Interconnects over 1 000 MHz, Jan. 18, 2000.