Glass-ceramic composition for recording disk substrate
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C03C-010/08
출원번호
US-0616041
(2000-07-13)
우선권정보
JP-0200442 (1999-07-14)
발명자
/ 주소
Nagata, Hideki
Mori, Toshiharu
Yuki, Hiroshi
Kawai, Hideki
Sugimoto, Akira
Ishimaru, Kazuhiko
출원인 / 주소
Minolta Co., Ltd.
대리인 / 주소
Burns, Doane, Swecker & Mathis, LLP
인용정보
피인용 횟수 :
0인용 특허 :
30
초록
A glass ceramics composition for recording disk substrate contains, essentially, expressed in terms of weight percent on the oxide basis, from 48 to 54.8 wt % of SiO2,from 10 to 30 wt % of Al2O3,from 10 to 30 wt % of MgO, and from 2.4 to 10 wt % of Li2O.
대표청구항▼
A glass ceramics composition for recording disk substrate contains, essentially, expressed in terms of weight percent on the oxide basis, from 48 to 54.8 wt % of SiO2,from 10 to 30 wt % of Al2O3,from 10 to 30 wt % of MgO, and from 2.4 to 10 wt % of Li2O. apsulate the one or more micro-channels. 10
A glass ceramics composition for recording disk substrate contains, essentially, expressed in terms of weight percent on the oxide basis, from 48 to 54.8 wt % of SiO2,from 10 to 30 wt % of Al2O3,from 10 to 30 wt % of MgO, and from 2.4 to 10 wt % of Li2O. apsulate the one or more micro-channels. 10. The method of claim 9, following the encapsulation of the micro-channels, further comprising: coating a surface of the oxide layer with a dielectric layer in order to planarize the surface of the oxide layer. 11. The method of claim 10, wherein the substrate comprises silicon, the oxide layer comprises a low temperature silicon nitride, the dielectric layer comprises one of oxide, nitride, and silicon polymer, and forming the oxide layer comprises growing. 12. The method of claim 9, following the encapsulating the micro-channels, further comprising: chemically, mechanically polishing of the oxide layer to planarize the oxide layer. 13. The method of claim 9, wherein forming the access windows comprises: determining channel dimensions of the one or more micro-channels; and anisotropically etching the oxide layer using direct-write focused ion beam milling to form the periodic array of access holes along the channel dimension of the one or more micro-channels. 14. The method of claim 9, wherein etching an underlying area comprises: using a laser chemical etcher to rasterize a focused laser beam along the channel dimensions of the one or more micro-channels, such that the one or more micro-channels are formed within the underlying area of the substrate. 15. The method of claim 9, wherein encapsulating the micro-channels comprises: using a physical vapor deposition source to deposit the oxide over the oxide layer in order to encapsulate the one or more micro-channels. 16. The method of claim 15, wherein encapsulating the micro-channels further comprises: rotating the substrate to a predetermined angle; and performing a sputtered deposition of oxide along an angled surface of the oxide layer to close the periodic array of access holes, such that the one or more micro-channels are encapsulated by the oxide layer. 17. A method comprising: over an area of a substrate, forming a thin film layer; following forming the thin film layer, forming a periodic array of access holes within the thin film layer; forming, via the access holes, one or more micro-channels within an underlying area of the substrate; rotating the substrate to a predetermined angle; and performing a sputtered deposition of silicon oxide along an angled surface of the thin film layer to close the periodic array of access holes, such that the one or more micro-channels are encapsulated by the thin layer. 18. A method comprising: over an area of a surface of a substrate, depositing an oxide layer; following depositing the oxide layer, anisotropically etching the oxide layer to form a periodic array of access holes within the oxide layer, the period array of access holes formed along channel dimensions of one or more desired micro-channels; etching, via the access holes, an underlying area of the substrate to create one or more micro-channels within the underlying area of the substrate according to the channel dimensions defined by the periodic array of access holes; and rotating the substrate to a predetermined angle; and performing a sputtered deposition of oxide along an angled surface of the oxide layer to close the periodic array of access holes, such that the one or more micro-channels are encapsulated by the oxide layer.
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