초록 ▼

A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient

A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three-dimensional photonic crystal of a structural material, suitable for the incandescent emitter, is also disclosed.

대표청구항 ▼

1. A photonically engineered incandescent emitter, comprising a photonic crystal having a characteristic lattice constant and comprising tungsten or tungsten alloy as a refractory emitter material having a first dielectric constant and at least one other lattice material having at least one other di

1. A photonically engineered incandescent emitter, comprising a photonic crystal having a characteristic lattice constant and comprising tungsten or tungsten alloy as a refractory emitter material having a first dielectric constant and at least one other lattice material having at least one other dielectric constant and wherein the characteristic lattice constant, the refractory emitter material, and the at least one other lattice material are chosen so as to create a photonic bandgap that modifies thermal emission above a cutoff wavelength when the photonic crystal is heated. 2. The photonically engineered incandescent emitter of claim 1, wherein the at least one other lattice material comprises air. 3. The photonically engineered incandescent emitter of claim 1, wherein the characteristic lattice constant is less than 5 microns. 4. The photonically engineered incandescent emitter of claim 1, wherein the characteristic lattice constant is less than 1 micron. 5. The photonically engineered incandescent emitter of claim 1, wherein the photonic crystal has a complete bandgap. 6. The photonically engineered incandescent emitter of claim 1, wherein the photonic crystal is two-dimensional. 7. The photonically engineered incandescent emitter of claim 1, wherein the photonic crystal is three-dimensional. 8. The photonically engineered incandescent emitter of claim 7, wherein the photonic crystal comprises a Lincoln-Log type structure. 9. The photonically engineered incandescent emitter of claim 1, wherein the characteristic lattice constant is less than 10 microns. 10. A photonically engineered incandescent emitter, comprising a photonic crystal having a characteristic lattice constant of less than 10 microns and comprising a refractory emitter material having a first dielectric constant and at least one other lattice material having at least one other dielectric constant and wherein the refractory emitter material and the at least one other lattice material are chosen so as to create a photonic bandgap that modifies thermal emission above a cutoff wavelength when the photonic crystal is heated. 11. The photonically engineered incandescent emitter of claim 10, wherein the at least one other lattice material comprises air. 12. The photonically engineered incandescent emitter of claim 10, wherein the refractory emitter material comprises a metal. 13. The photonically engineered incandescent emitter of claim 12, wherein the metal comprises tungsten or a tungsten alloy. 14. The photonically engineered incandescent emitter of claim 10, wherein the refractory emitter material comprises a non-metal. 15. The photonically engineered incandescent emitter of claim 14, wherein the non-metal comprises silicon carbide, carbon, or titania. 16. The photonically engineered incandescent emitter of claim 10, wherein the characteristic lattice constant is less than 5 microns. 17. The photonically engineered incandescent emitter of claim 10, wherein the characteristic lattice constant is less than 1 micron. 18. The photonically engineered incandescent emitter of claim 10, wherein the photonic crystal has a complete bandgap. 19. The photonically engineered incandescent emitter of claim 10, wherein the photonic crystal is two-dimensional. 20. The photonically engineered incandescent emitter of claim 10, wherein the photonic crystal is three-dimensional. 21. The photonically engineered inclandescent emitter of claim 20, wherein the photonic crystal comprises a Lincoln-Log type structure.