초록 ▼

The HF defect density in an SOI is reduced. After annealing step (S2) of annealing an SOI at a temperature between the melting point (e.g., 993° C.) of a semiconductor metal compound (e.g., nickel silicide) formed from a metal and the semiconductor material of the crystal semiconductor of the SOI (i

The HF defect density in an SOI is reduced. After annealing step (S2) of annealing an SOI at a temperature between the melting point (e.g., 993° C.) of a semiconductor metal compound (e.g., nickel silicide) formed from a metal and the semiconductor material of the crystal semiconductor of the SOI (inclusive) and the melting point of the semiconductor material (inclusive), the temperature is reduced such that the cooling rate within the temperature range from the melting point of the semiconductor metal compound and the production temperature (e.g., 775° C.) of the semiconductor metal compound becomes 0.12° C./sec or more.

대표청구항 ▼

1. An SOI annealing method comprising the steps of: annealing an SOI at a temperature from 993° C. to a melting point of silicon, wherein a nickel concentration on a surface of the SOI is not less than 1×109atoms/cm2; and reducing a temperature of the SOI after the annealing step, wherein a cool

1. An SOI annealing method comprising the steps of: annealing an SOI at a temperature from 993° C. to a melting point of silicon, wherein a nickel concentration on a surface of the SOI is not less than 1×109atoms/cm2; and reducing a temperature of the SOI after the annealing step, wherein a cooling rate within a temperature range from 993° C. to 775° C. is not less than 0.12° C./sec. 2. The method according to claim 1, wherein the cooling rate is not less than 3° C./sec. 3. The method according to claim 1, wherein the cooling rate is not less than 6° C./sec. 4. The method according to claim 1, wherein an annealing atmosphere is a reducing atmosphere. 5. The method according to claim 4, wherein the reducing atmosphere is an atmosphere containing hydrogen gas. 6. The method according to claim 1, wherein an SOI layer of the SOI before annealing contains no COP. 7. The method according to claim 6, wherein the SOI layer of the SOI is formed by epitaxial growth. 8. The method according to claim 1, wherein the annealing is executed using a lamp. 9. The method according to claim 1, wherein the annealing is executed using an induction heater. 10. An SOI manufacturing method comprising the steps of: manufacturing an SOI by forming a crystal semiconductor layer on an insulating substrate; and executing the annealing method of claim 1 for the SOI.