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An acoustic sensor array may include sensor sections positioned along a length of a strain member. One or more sensors may be disposed within a sensor section. One or more sensors may be encapsulated in a molding material using a reaction injection molding (RIM) process to form a sensor section. Buo

An acoustic sensor array may include sensor sections positioned along a length of a strain member. One or more sensors may be disposed within a sensor section. One or more sensors may be encapsulated in a molding material using a reaction injection molding (RIM) process to form a sensor section. Buoyant sections may be formed between sensor sections on the strain member. Buoyant sections may be formed by encapsulating a portion of the strain member in a buoyant molding material using a RIM process. Buoyant sections and/or sensor sections may include hollow microspheres. A concentration of hollow microspheres may be adjusted to control a buoyancy of the array. The strain member, the sensor sections, and the buoyant sections may be joined to form the array.

대표청구항 ▼

An acoustic sensor array may include sensor sections positioned along a length of a strain member. One or more sensors may be disposed within a sensor section. One or more sensors may be encapsulated in a molding material using a reaction injection molding (RIM) process to form a sensor section. Buo

An acoustic sensor array may include sensor sections positioned along a length of a strain member. One or more sensors may be disposed within a sensor section. One or more sensors may be encapsulated in a molding material using a reaction injection molding (RIM) process to form a sensor section. Buoyant sections may be formed between sensor sections on the strain member. Buoyant sections may be formed by encapsulating a portion of the strain member in a buoyant molding material using a RIM process. Buoyant sections and/or sensor sections may include hollow microspheres. A concentration of hollow microspheres may be adjusted to control a buoyancy of the array. The strain member, the sensor sections, and the buoyant sections may be joined to form the array. transistor of claim 1, wherein the current source component further comprises; a dummy cell including gate, drain and source nodes, and the drain node coupled to the source node of the floating gate transistor, the source node coupled to the electrical sink, the gate coupled to a voltage source, and the dummy cell fabricated utilizing processes substantially matching the fabrication processes utilized for the floating gate transistor. 6. The circuitry for programming a floating gate transistor of claim 5, wherein the current source component further comprises; a resistor coupled in parallel with the dummy cell. 7. The circuitry for programming a floating gate transistor of claim 5, wherein the current source component further comprises; a diode coupled in parallel with the dummy cell. 8. The circuitry for programming a floating gate transistor of claim 7, wherein the diode further comprises; a MOSFET with the gate shorted to the drain side to act as a diode. 9. The circuitry for programming a floating gate transistor of claim 1, wherein the current source component further comprises; a dummy cell including gate, drain and source nodes, and the drain node coupled to the source node of the floating gate transistor, the source node coupled to the electrical sink, and the gate coupled to a voltage source, and the dummy cell fabricated with dimensions substantially matching the dimensions of the floating gate transistor. 10. The circuitry for programming a floating gate transistor of claim 9, wherein the current source component further comprises; a resistor coupled in parallel with the dummy cell. 11. The circuitry for programming a floating gate transistor of claim 9, wherein the current source component further comprises; a diode coupled in parallel with the dummy cell. 12. The circuitry for programming a floating gate transistor of claim 11, wherein the diode further comprises; a MOSFET with the gate shorted to the drain side to act as a diode. 13. The circuitry for programming a floating gate transistor of claim 1, wherein said current source component couples in series between the floating gate transistor and the electrical sink only during a programming interval. 14. The circuitry for programming a floating gate transistor of claim 1, further comprising; a switch switchably coupling the current source component to the floating gate transistor only during the programming interval. 15. An integrated circuit memory module on a semiconductor substrate comprising; an array of floating gate memory cells arranged in M rows and N columns and each cell including a floating gate transistor and the floating gate transistor including gate, drain and source nodes; decoders coupled to the M rows and N columns of memory cells to provide for reading and programming floating gate memory cells within a selected one of the M rows of the memory array; and a plurality of current source components each coupled in series between an electrical sink and a corresponding one of the floating gate memory cells within the selected one of the M rows during a programming interval, and each of the plurality of current source components including an electrical characteristic substantially matching the electrical characteristic of the corresponding one of the floating gate memory cells to be programmed. 16. The integrated circuit memory module of claim 15, wherein the array of M rows and N columns of floating gate memory cells are arranged in blocks with the source node of each floating gate transistor within the memory cells of each block coupled to a common source line; and wherein further the plurality of current source components each couple to the common source line of a corresponding one of the blocks. 17. The integrated circuit memory module of claim 15, wherein the electrical characteristic of each of the plurality of current source components includes at least one of: resistance, capacitance, conductance, and inductance. 18. The integrated circuit memory module of claim 15, wherein the plurality of current source components each further comprise a process dependent electrical characteristic substantially matching the process dependent electrical characteristic of the corresponding one of the floating gate memory cells. 19. The integrated circuit memory module of claim 18, wherein the process dependent electrical characteristic of each of the plurality of current source components includes at least one of: channel width, channel length, oxide thickness, dopant type and dopant density. 20. The integrated circuit memory module of claim 15, wherein each of the plurality of current source components further comprises; a dummy cell including gate, drain, and source nodes, and the drain node coupled to the source node of the floating gate transistor within the corresponding one of the floating gate memory cells, the source node coupled to the electrical sink, the gate coupled to a voltage source, and the dummy cell fabricated utilizing processes substantially matching the fabrication processes utilized for the corresponding one of the floating gate memory cells. 21. The integrated circuit memory module of claim 20, wherein each of the plurality of current source components further comprises; a resistor coupled in parallel with the dummy cell. 22. The integrated circuit memory module of claim 20, wherein each of the plurality of current source components further comprises; a diode coupled in parallel with the dummy cell. 23. The integrated circuit memory module of claim 22, wherein the diode further comprises: a MOSFET with the gate shorted to the drain side to act as a diode. 24. The integrated circuit memory module of claim 15, wherein each of the plurality of current source components further comprises; a dummy cell including gate, drain and source nodes, and the drain node coupled to the source node of the floating gate transistor, the source node coupled to the electrical sink, the gate coupled to a voltage source, and the dummy cell fabricated with dimensions substantially matching the dimensions of the floating gate transistor. 25. The integrated circuit memory module of claim 24, wherein each of the plurality of current source components further comprises; a resistor coupled in parallel with the dummy cell. 26. The integrated circuit memory module of claim 24, wherein each of the plurality of current source components further comprises; a diode coupled in parallel with the dummy cell. 27. The integrated circuit memory module of claim 26, wherein the diode further comprises: a MOSFET with the gate shorted to the drain side to act as a diode. 28. The integrated circuit memory module of claim 15, wherein each of the plurality of current source components couples in series between the floating gate transistor and the electrical sink only during a programming interval. 29. The integrated circuit memory module of claim 15, further comprising: a plurality of switches each associated with a corresponding one of the plurality of current source components and each of the plurality of switches switchably coupling the corresponding one of the plurality of current source components to the corresponding one of the floating gate memory cells only during the programming interval. ed in a 2-cells/1-bit scheme in which a pair of nonvolatile memory elements can be respectively connected to a pair of complementary data lines, and threshold voltage states different from each other are set for the nonvolatile memory elements so as to differentially read out data. A word line voltage in a readout mode is set to be substantially equal to a threshold voltage in a thermal equilibrium state (an initial threshold voltage), and also to be substantially equal to the average value of a low threshold voltage value and a high threshold voltage value. 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