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An IC card system for a game machine using an IC card includes a game token input device for inputting a game token onto the IC card based on the amount of money deposited. The IC card system also includes a game device that decreases the number of game tokens stored on the IC card when the IC card

An IC card system for a game machine using an IC card includes a game token input device for inputting a game token onto the IC card based on the amount of money deposited. The IC card system also includes a game device that decreases the number of game tokens stored on the IC card when the IC card is used with the game device. The IC system also includes a totaling device that determines the number of tokens inputted by the game token input device and the number of tokens used by the game devices, at a particular location.

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An IC card system for a game machine using an IC card includes a game token input device for inputting a game token onto the IC card based on the amount of money deposited. The IC card system also includes a game device that decreases the number of game tokens stored on the IC card when the IC card

An IC card system for a game machine using an IC card includes a game token input device for inputting a game token onto the IC card based on the amount of money deposited. The IC card system also includes a game device that decreases the number of game tokens stored on the IC card when the IC card is used with the game device. The IC system also includes a totaling device that determines the number of tokens inputted by the game token input device and the number of tokens used by the game devices, at a particular location. force configured to be substantially equivalent to the first force such that the greater diameter of the first roller is configured to create a greater contact surface area with the first side of the substrate than the second roller with the second side of the substrate enabling the first roller to apply more mechanical action on the first side of the substrate. 11. An asymmetric double-sided substrate scrubber of claim 10, wherein the first diameter is configured to be between approximately about 2" and about 2.5". 12. An asymmetric double-sided substrate scrubber of claim 11, wherein the second diameter is configured to be between approximately about 2.5" and about 4.5". 13. An asymmetric double-sided substrate scrubber, comprising: a pair of first drums having a first belt-type brush mounted thereon, the first belt-type brush being constructed from a first material, the first belt-type brush having a first density; and a pair of second drums having a second belt-type brush mounted thereon, the second belt-type brush being constructed from a second material, the second belt-type brush having a second density configured to be greater than the first density, wherein the first belt-type brush is configured to be applied onto a first side of a substrate with a first force and the second belt-type brush is configured to be applied onto a second side of the substrate with a second force substantially equivalent to the first force. 14. An asymmetric double-sided substrate scrubber of claim 13, wherein the lower density of the first material causes the first brush to have a substantially greater contact surface area with the first side of the substrate and the higher density of the second material causes the second brush to have a smaller contact surface area with the second side of the substrate. 15. An asymmetric double-sided substrate scrubber of claim 13, wherein the lower density of the first material causes the first brush to have a high compressibility and the greater density of the second material causes the second brush to have a lower compressibility. 16. A method for processing a front side and a back side of a wafer asymmetrically, the method comprising: configuring a first brush for processing the front side of the wafer to have a first compressibility; configuring a second brush for processing the back side of the wafer to have a second compressibility; and applying equal forces to the front side and the back side of the wafer using the first brush and the second brush such that the first brush achieves a greater compressibility on the front side of the wafer than the second brush on the back side of the wafer enabling the first brush to apply more mechanical action on the first side of the wafer. 17. A method for processing a front side and a back side of a wafer symmetrically as recited in claim 16, wherein configuring the first brush for processing the front side of the wafer to have the first compressibility includes, constructing the first brush from a first material having a first density. 18. A method for processing a front side and a back side of a wafer asymmetrically as recited in claim 17, wherein configuring the second brush for processing the back side of the wafer to have the second compressibility includes, constructing the second brush from a second material having a second density, wherein the second density is configured to be higher than the first density. 19. A method for cleaning a front side and a back side of a wafer asymmetrically, the method comprising: providing a first roller having a material with a first compressibility; providing a second roller having a material with a second compressibility, the first compressibility configured to be greater than the second compressibility; inserting the wafer such that the first roller having the material with the greater compressibility is closer to the front side of the wafer and the second roller having the material wi