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Systems and methods are provided for limiting voltage to low-voltage devices employing a high-voltage supply. The systems and methods employ voltage limiting devices to bias cascode devices. The cascode devices are serially connected from a high-voltage supply to a low-voltage node. The voltage limi

Systems and methods are provided for limiting voltage to low-voltage devices employing a high-voltage supply. The systems and methods employ voltage limiting devices to bias cascode devices. The cascode devices are serially connected from a high-voltage supply to a low-voltage node. The voltage limiters are serially connected from the high-voltage supply to ground to bias the cascode devices. Current sources are connected in parallel with the voltage limiters except the one connected to ground. If the current sources are set to deliver substantially equal currents, then the order in which the cascode transistors are biased becomes nondeterministic, but the circuit continues to finction and the overall supply current is thereby minimized.

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Systems and methods are provided for limiting voltage to low-voltage devices employing a high-voltage supply. The systems and methods employ voltage limiting devices to bias cascode devices. The cascode devices are serially connected from a high-voltage supply to a low-voltage node. The voltage limi

Systems and methods are provided for limiting voltage to low-voltage devices employing a high-voltage supply. The systems and methods employ voltage limiting devices to bias cascode devices. The cascode devices are serially connected from a high-voltage supply to a low-voltage node. The voltage limiters are serially connected from the high-voltage supply to ground to bias the cascode devices. Current sources are connected in parallel with the voltage limiters except the one connected to ground. If the current sources are set to deliver substantially equal currents, then the order in which the cascode transistors are biased becomes nondeterministic, but the circuit continues to finction and the overall supply current is thereby minimized. other Carbon Materials after H2,O2,and Cs Treatment," Appl. Phys. Lett. 67(9), 2B Aug. 1995, pp. 1328-1330. K. Okano, et al., "Low-threshold Cold Cathodes Made of Nitorgen-doped Chemical-Vapour-Deposited diamond", Nature, vol. 381, May 9, 1996, pp. 140-141.