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Interconnections to copper IC's 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/44
출원번호 US-0546037 (2000-04-10)
발명자 / 주소
  • Moyer, Ralph Salvatore
  • Ryan, Vivian Wanda
출원인 / 주소
  • Agere Systems INC
대리인 / 주소
    Wilde, Peter V. D.
인용정보 피인용 횟수 : 42  인용 특허 : 7

초록

The specification describes a process for forming a barrier layer on copper metallization in semiconductor integrated circuits. The barrier layer is effective for both wire bond and solder bump interconnections. The barrier layer is Ti/Ni formed on the copper. Aluminum bond pads are formed on the ba

대표청구항

The specification describes a process for forming a barrier layer on copper metallization in semiconductor integrated circuits. The barrier layer is effective for both wire bond and solder bump interconnections. The barrier layer is Ti/Ni formed on the copper. Aluminum bond pads are formed on the ba

이 특허에 인용된 특허 (7)

  1. Ting Chiu H. (Saratoga CA) Paunovic Milan (Port Washington NY), Electroless deposition for IC fabrication.
  2. Elenius Peter ; Hollack Harry, Method for forming chip scale package.
  3. Baker Mark H. (San Jose CA), Method for forming solder bumps in semiconductor devices.
  4. Higdon William David ; Stepniak Frank ; Yeh Shing, Method of solder bumping a circuit component.
  5. Costrini Gregory ; Goldblatt Ronald Dean ; Heidenreich ; III John Edward ; McDevitt Thomas Leddy, Method/structure for creating aluminum wirebound pad on copper BEOL.
  6. Tsuchiya Yasuaki,JPX, Semiconductor device with a copper wiring pattern.
  7. DiGiacomo Giulio (Hopewell Junction NY) Kim Jung-Ihl (Seoul NY KRX) Narayan Chandrasekhar (Hopewell Junction NY) Purushothaman Sampath (Yorktown Heights NY), Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal.

이 특허를 인용한 특허 (42)

  1. Bhatt, Hemanshu; Vijay, Dilip; Pallinti, Jayanthi; Sun, Sey-Shing; Ying, Hong; Kao, Chiyi, Alternate pad structures/passivation inegration schemes to reduce or eliminate IMC cracking in post wire bonded dies during Cu/Low-K BEOL processing.
  2. Craig,David M.; Chen,Chien Hua; Haluzak,Charles C.; Yenchik,Ronnie J., Assembly with a ring and bonding pads formed of a same material on a substrate.
  3. Antol, Joze E.; Osenbach, John W.; Steiner, Kurt G., Bond pad support structure for semiconductor device.
  4. Fan, Yang-Tung; Chu, Cheng-Yu; Fan, Fu-Jier; Lin, Shih-Jane; Peng, Chiou-Shian; Chen, Yen-Ming; Lin, Kuo-Wei, Bumping process to increase bump height and to create a more robust bump structure.
  5. Lee, Jin-Yuan; Huang, Ching-Cheng; Lin, Mou-Shiung, Chip package.
  6. Arvin, Charles L.; Gambino, Jeffrey P.; Musante, Charles F.; Muzzy, Christopher D.; Sauter, Wolfgang, Corrosion resistant aluminum bond pad structure.
  7. Arvin, Charles L.; Gambino, Jeffrey P.; Musante, Charles F.; Muzzy, Christopher D.; Sauter, Wolfgang, Corrosion resistant aluminum bond pad structure.
  8. Bojkov,Christo P.; Torres,Orlando F., Direct bumping on integrated circuit contacts enabled by metal-to-insulator adhesion.
  9. Bojkov,Christo P.; Torres,Orlando F., Direct bumping on integrated circuit contacts enabled by metal-to-insulator adhesion.
  10. Hosseini, Khalil; Stecher, Matthias, Electronic device and method for production.
  11. Mis, J. Daniel; Engel, Kevin, Electronic devices including metallurgy structures for wire and solder bonding.
  12. Biggs,Julie C.; Cheng,Tien Jen; Eichstadt,David E.; Fanti,Lisa A.; Griffith,Jonathan H.; Knarr,Randolph F.; Knickerbocker,Sarah H.; Petrarca,Kevin S.; Quon,Roger A.; Sauter,Wolfgang; Srivastava,Kamal, I/C chip suitable for wire bonding.
  13. Ryan,Vivian, Integrated circuit having bond pad with improved thermal and mechanical properties.
  14. Antol, Joze Eura; Osenbach, John William; Weachock, Ronald James, Integrated circuit package including wire bonds.
  15. Lin,Yaojian; Do,Byung Tai; Looi,Wan Lay; Cao,Haijing, Integrated circuit system for bonding.
  16. Fogel, Keith E.; Ghosal, Balaram; Kang, Sung K.; Kilpatrick, Stephen; Lauro, Paul A.; Nye, III, Henry A.; Shih, Da-Yuan; Zupanski-Nielsen, Donna S., Interconnections for flip-chip using lead-free solders and having reaction barrier layers.
  17. Lee,Kong Weng; Ng,Kee Yean; Kuan,Yew Cheong; Tan,Gin Ghee; Tan,Cheng Why, Method for fabricating a packaging device for semiconductor die and semiconductor device incorporating same.
  18. Lee, Jin-Yuan; Huang, Ching-Cheng; Lin, Mou-Shiung, Method of fabricating chip package.
  19. Hammer, Markus; Ruhl, Guenther; Strasser, Andreas; Melzl, Michael; Goellner, Reinhard; Groteloh, Doerthe, Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element.
  20. Hammer, Markus; Ruhl, Guenther; Strasser, Andreas; Melzl, Michael; Goellner, Reinhard; Groteloh, Doerthe, Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element.
  21. Pyo, Sung-Gyu; Kim, Dong-Joon, Package of MEMS device and method for fabricating the same.
  22. Lee,Kong Weng; Ng,Kee Yean; Kuan,Yew Cheong; Tan,Gin Ghee; Tan,Cheng Why, Packaging device for semiconductor die, semiconductor device incorporating same and method of making same.
  23. Lin, Mou-Shiung; Lee, Jin-Yuan; Lei, Ming-Ta; Huang, Ching-Cheng, Post passivation metal scheme for high-performance integrated circuit devices.
  24. Itou, Hiroyasu, Power composite integrated semiconductor device and manufacturing method thereof.
  25. Itou,Hiroyasu, Power composite integrated semiconductor device and manufacturing method thereof.
  26. Itou,Hiroyasu, Power composite integrated semiconductor device and manufacturing method thereof.
  27. Sun, Sey-Shing; Pallinti, Jayanthi; Vijay, Dilip; Bhatt, Hemanshu; Ying, Hong; Kao, Chiyi; Burke, Peter, Reduction of macro level stresses in copper/low-K wafers.
  28. Archer, III, Vance D.; Ayukawa, Michael C.; Bachman, Mark A.; Chesire, Daniel P.; Kang, Seung H.; Kook, Taeho; Merchant, Sailesh M.; Steiner, Kurt G., Routing under bond pad for the replacement of an interconnect layer.
  29. Shinkai, Hiroyuki; Okumura, Hiroshi, Semiconductor device employing wafer level chip size package technology.
  30. Burrell, Lloyd G.; Wong, Kwong H.; Kelly, Adreanne A.; McKnight, Samuel R., Semiconductor device having a composite layer in addition to a barrier layer between copper wiring and aluminum bond pad.
  31. Lee, Kong Weng; Ng, Kee Yean; Kuan, Yew Cheong; Tan, Cheng Why; Tan, Gin Ghee, Semiconductor device with a light emitting semiconductor die.
  32. Lindgren, Joseph T., Semiconductor device with copper wirebond sites and methods of making same.
  33. Lindgren, Joseph T., Semiconductor device with copper wirebond sites and methods of making same.
  34. Yahata, Kosuke; Goshonoo, Koichi; Moriyama, Miki, Semiconductor light emitting element.
  35. Bachman, Mark A.; Bitting, Donald S.; Chittipeddi, Sailesh; Kang, Seung H.; Merchant, Sailesh M., Solder bump structure for flip chip semiconductor devices and method of manufacturing therefore.
  36. Takyu,Shinya; Iizuka,Kazuhiro; Kiritani,Mika, Stack MCP.
  37. Takyu, Shinya; Iizuka, Kazuhiro; Kiritani, Mika, Stack MCP and manufacturing method thereof.
  38. Takyu,Shinya; Iizuka,Kazuhiro; Kiritani,Mika, Stack MCP and manufacturing method thereof.
  39. Lee, Jin-Yuan; Huang, Ching-Cheng; Lin, Mou-Shiung, Structure and manufacturing method of chip scale package.
  40. Lee, Jin-Yuan; Huang, Ching-Cheng; Lin, Mou-Shiung, Structure and manufacturing method of chip scale package.
  41. Daubenspeck, Timothy H.; Gambino, Jeffrey P.; Muzzy, Christopher D.; Sauter, Wolfgang, Wire and solder bond forming methods.
  42. Gleixner,Robert J.; Danielson,Donald; Paluda,Patrick M.; Naik,Rajan, Wirebond structure and method to connect to a microelectronic die.
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