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Low voltage latch with uniform sizing 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H03K-003/12
출원번호 US-0872839 (2001-06-01)
발명자 / 주소
  • Burr, James B.
출원인 / 주소
  • Sun Microsystems, Inc.
대리인 / 주소
    Gunnison, McKay & Hodgson, L.L.P.
인용정보 피인용 횟수 : 44  인용 특허 : 54

초록

Low voltage latches are designed such that all the transistors included in the latch are low threshold transistors and the low threshold transistors have the same channel dimensions, i.e., the same channel length and width. In order to meet this requirement and still provide a feedback signal of suf

대표청구항

Low voltage latches are designed such that all the transistors included in the latch are low threshold transistors and the low threshold transistors have the same channel dimensions, i.e., the same channel length and width. In order to meet this requirement and still provide a feedback signal of suf

이 특허에 인용된 특허 (54)

  1. D\Souza Godfrey P. (San Jose CA), Apparatus and method for controlling transistor current leakage.
  2. Burr James B. ; Brassington Michael P., Asymmetric low power MOS devices.
  3. Burr James B. ; Laird Douglas Alan, Back-biasing in asymmetric MOS devices.
  4. Pyeon Hong Beom,KRX, Circuit for low voltage sense amplifier.
  5. Ovens Kevin M. (Plano TX) Bittlestone Clive D. (Allen TX), Circuitry and method for latching a logic state.
  6. Bosshart Patrick W., Data storage circuits using a low threshold voltage output enable circuit.
  7. Halepete Sameer D. (Sunnyvale CA), Dynamic MOSFET threshold voltage controller.
  8. D\Souza Godfrey P. (Santa Clara CA) Testa James F. (Mountain View CA) Laird Douglas A. (Los Gatos CA) Burr James B. (Foster City CA), Dynamic clocked inverter latch with reduced charge leakage.
  9. Hill Anthony M. ; Ko Uming, Family of logic circuits emploting mosfets of differing thershold voltages.
  10. Kubota Katsuhisa (Kawasaki JPX) Nakamura Kenji (Kawasaki JPX), Flip-flop circuit and electronic device including the flip-flop circuit.
  11. Prater Cordell E. (Johnson City TN), High current static MOS driver circuit with low DC power dissipation.
  12. Sato Yasushi (Kawasaki JPX), High-integration J-K flip-flop circuit.
  13. Ko Uming, Hybrid dual threshold transistor registers.
  14. Houston Theodore W., Integrated circuit having dynamic logic with reduced standby leakage current.
  15. Sato Noriaki (Kawasaki JPX) Mieno Fumitake (Kawasaki JPX), Integrated semiconductor device having a buried semiconductor layer and fabrication method thereof.
  16. Kang Dae Gwan,KRX, Low powder CMOS circuit.
  17. Burr James B. ; Brassington Michael P., Low power, high performance junction transistor.
  18. Seliskar John J., Low threshold voltage MOS transistor and method of manufacture.
  19. Burr James B. ; Brassington Michael P., Low threshold voltage, high performance junction transistor.
  20. Douseki Takakuni (Atsugi JPX), Low voltage SOI (Silicon On Insulator) logic circuit.
  21. Burr James B., MOS device structure and method for reducing PN junction leakage.
  22. Burr James B., MOS devices with retrograde pocket regions.
  23. Stotz Dan ; Rosenberry Raymond W ; Townley Kent R ; Stong Gayvin E, Master-slave flip-flop and method.
  24. D\Souza Godrey P. (San Jose CA), Memory cell with power supply induced reversed-bias pass transistors for reducing off-leakage current.
  25. Miyamoto Masafumi (Koganei JPX) Ishii Tatsuya (Kodaira JPX), Metal-insulator-semiconductor device having reduced threshold voltage and high mobility for high speed/low-voltage opera.
  26. Ye Yibin ; De Vivek K., Method and apparatus for reducing standby leakage current using a leakage control transistor that receives boosted gate drive during an active mode.
  27. Burr James B., Method for forming MOS devices with retrograde pocket regions and counter dopant regions at the substrate surface.
  28. Burr James B., Method for forming MOS devices with retrograde pocket regions and counter dopant regions buried in the substrate surfac.
  29. Burr James B., Method for forming a notched gate oxide asymmetric MOS device.
  30. Burr James B., Method for making die-compensated threshold tuning circuit.
  31. Burr James B. (Foster CA) Brassington Michael P. (Sunnyvale CA), Method of making a low power, high performance junction transistor.
  32. Burr James B. (Foster City CA) Brassington Michael P. (Sunnyvale CA), Method of making asymmetric low power MOS devices.
  33. Takabatake Akihiko (Itami JPX) Uramoto Shinichi (Itami JPX) Nakagawa Shinichi (Itami JPX), Phase clocked latch having both parallel and shunt connected switches for transmission gates.
  34. Schu Carl, Power control apparatus and method for a body implantable medical device.
  35. Motley Gordon W. (Ft. Collins CO) Meier Peter J. (Ft. Collins CO) Miller Brian C. (Ft. Collins CO), Quick resolving latch.
  36. Lee Jian-Hsing,TWX ; Chen Shui-Hung,TWX ; Shih Jiaw Ren,TWX, Robust latchup-immune CMOS structure.
  37. Halepete Sameer D. (Sunnyvale CA) Burr James (Foster City CA), Self-enabling latch.
  38. Shirahata Masayoshi,JPX ; Okumura Yoshinori,JPX, Semiconductor device and method of manufacturing the same.
  39. Nakashima Takashi,JPX, Semiconductor device comprising a bipolar transistor.
  40. Makino Hiroshi,JPX ; Suzuki Hiroaki,JPX, Semiconductor integrated circuit.
  41. Yokomizo Koichi,JPX, Semiconductor integrated circuit and testing method thereof.
  42. Okazawa Takeshi (Tokyo JPX), Semiconductor integrated circuit device of high degree of integration.
  43. Morikawa Koichi,JPX, Semiconductor integrated circuit having virtual power supply line and power control transistor.
  44. Tsukasa Ooishi JP, Semiconductor logic circuit device of low current consumption.
  45. Burr James B., Split gate oxide asymmetric MOS devices.
  46. Rose James W. (San Carlos CA) D\Souza Godfrey P. (Santa Clara CA) Stinehelfer Jonathan J. (San Jose CA) Testa James F. (Mountain View CA), Storage cell using low powered/low threshold CMOS pass transistors having reduced charge leakage.
  47. Murgula James E. ; Burr James B., Sub-threshold leakage tuning circuit.
  48. Lysinger Mark A., Switching master slave circuit.
  49. Burr James B., Target Ion/Ioff threshold tuning circuit and method.
  50. Williams Richard K. ; Cornell Michael E., Threshold adjustment in field effect semiconductor devices.
  51. Burr James B., Tunable field plate.
  52. Burr James B., Tunable threshold SOI device using back gate and intrinsic channel region.
  53. Burr James B. ; Houston Theodore W., Tunable threshold SOI device using back gate well.
  54. Burr James B., Tunable threshold SOI device using isolated well structure for back gate.

이 특허를 인용한 특허 (44)

  1. Pitkethly, Scott; Masleid, Robert Paul, Advanced repeater utilizing signal distribution delay.
  2. Pitkethly, Scott, Advanced repeater with duty cycle adjustment.
  3. Pitkethly, Scott, Advanced repeater with duty cycle adjustment.
  4. Pitkethly, Scott, Advanced repeater with duty cycle adjustment.
  5. Chan, Johnny; Tsai, Jeffrey Ming-Hung; Wong, Tin-Wai, Apparatus and methods for a high-voltage latch.
  6. Masleid, Robert Paul; Dholabhai, Vatsal, Circuit with enhanced mode and normal mode.
  7. Masleid, Robert Paul; Kowalczyk, Andre, Circuits and methods for detecting and assisting wire transitions.
  8. Masleid, Robert, Circuits, systems and methods relating to a dynamic dual domino ring oscillator.
  9. Masleid,Robert P., Circuits, systems and methods relating to dynamic ring oscillators.
  10. Masleid, Robert Paul, Column select multiplexer circuit for a domino random access memory array.
  11. Masleid,Robert P., Column select multiplexer circuit for a domino random access memory array.
  12. Masleid, Robert Paul, Configurable delay chain with stacked inverter delay elements.
  13. Masleid, Robert Paul, Configurable tapered delay chain with multiple sizes of delay elements.
  14. Masleid, Robert P.; Pitkethly, Scott, Cross point switch.
  15. Masleid, Robert P.; Pitkethly, Scott, Cross point switch.
  16. Masleid, Robert P.; Pitkethly, Scott, Cross point switch.
  17. Kuenemund, Thomas; Gammel, Berndt, Digital circuit and method for manufacturing a digital circuit.
  18. Masleid, Robert P, Dynamic ring oscillators.
  19. Lee, Chin, Fault-tolerant inverter circuit.
  20. Masleid, Robert P, Inverting zipper repeater circuit.
  21. Masleid, Robert P., Inverting zipper repeater circuit.
  22. Masleid, Robert Paul, Inverting zipper repeater circuit.
  23. Fukuoka, Kouhei, Latch circuit and semiconductor integrated circuit having the same.
  24. Lu, Chao-Hsin, Latch inverter and flip-flop using the same.
  25. Masleid, Robert, Leakage efficient anti-glitch filter.
  26. Masleid, Robert Paul, Power efficient multiplexer.
  27. Masleid, Robert Paul, Power efficient multiplexer.
  28. Masleid, Robert Paul, Power efficient multiplexer.
  29. Masleid, Robert Paul, Power efficient multiplexer.
  30. Masleid, Robert Paul; Dholabhai, Vatsal; Klingner, Christian, Repeater circuit having different operating and reset voltage ranges, and methods thereof.
  31. Masleid, Robert Paul; Dholabhai, Vatsal, Repeater circuit with high performance repeater mode and normal repeater mode, wherein high performance repeater mode has fast reset capability.
  32. Stoiber, Steven T.; Siu, Stuart, Ring based impedance control of an output driver.
  33. Stoiber, Steven T.; Siu, Stuart, Ring based impedance control of an output driver.
  34. Masleid, Robert Paul; Sousa, Jose; Kottapalli, Venkata, Scannable dynamic circuit latch.
  35. Ishii, Chihiro; Sei, Toshikazu, Semiconductor integrated circuit with a logic circuit including a data holding circuit.
  36. Ishii,Chihiro; Sei,Toshikazu, Semiconductor integrated circuit with a logic circuit including a data holding circuit.
  37. Petersen,John T., Soft-error rate improvement in a latch.
  38. Masleid, Robert P.; Burr, James B., Stacked inverter delay chain.
  39. Masleid, Robert Paul, Systems and methods for voltage distribution via multiple epitaxial layers.
  40. Pitkethly, Scott; Masleid, Robert P., Triple latch flip flop system and method.
  41. Pitkethly,Scott; Masleid,Robert P., Triple latch flip flop system and method.
  42. Fu, Robert; Osborn, Neal A.; Burr, James B., Voltage compensated integrated circuits.
  43. Fu, Robert; Osborn, Neal A.; Burr, James B., Voltage compensated integrated circuits.
  44. Fu,Robert; Osborn,Neal A.; Burr,James B., Voltage compensated integrated circuits.
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