초록 ▼

A method for testing and burning-in semiconductor components such as semiconductor dice on a semiconductor wafer, is provided. The method includes the step of providing all of the components on the wafer with resilient contact structures, such as metal pins having integral spring segments. The resil

A method for testing and burning-in semiconductor components such as semiconductor dice on a semiconductor wafer, is provided. The method includes the step of providing all of the components on the wafer with resilient contact structures, such as metal pins having integral spring segments. The resilient contact structures are used to test the components to identify functional and non-functional components. Following this test, the resilient contact structures on the non-functional components are deformed, such that electrical communication with the non-functional components is prevented in a subsequent burn-in test. This permits the burn-in test to be performed using "shared resources" test equipment. A deformation apparatus for deforming the resilient contact structures includes a deformation block configured to compress, bend or shape the resilient contact structures on the non-functional dice. A test system for performing the burn-in test includes the deformation apparatus, a burn-in board for retaining multiple substrates, a test board having test pads for electrically engaging the resilient contact structures on the functional components, and a test circuitry in electrical communication with the test board. An alternate embodiment test system includes a deformation apparatus configured to electrically engage the resilient contact structures, and to apply test signals to the components to identify defective components.

대표청구항 ▼

A method for testing and burning-in semiconductor components such as semiconductor dice on a semiconductor wafer, is provided. The method includes the step of providing all of the components on the wafer with resilient contact structures, such as metal pins having integral spring segments. The resil

A method for testing and burning-in semiconductor components such as semiconductor dice on a semiconductor wafer, is provided. The method includes the step of providing all of the components on the wafer with resilient contact structures, such as metal pins having integral spring segments. The resilient contact structures are used to test the components to identify functional and non-functional components. Following this test, the resilient contact structures on the non-functional components are deformed, such that electrical communication with the non-functional components is prevented in a subsequent burn-in test. This permits the burn-in test to be performed using "shared resources" test equipment. A deformation apparatus for deforming the resilient contact structures includes a deformation block configured to compress, bend or shape the resilient contact structures on the non-functional dice. A test system for performing the burn-in test includes the deformation apparatus, a burn-in board for retaining multiple substrates, a test board having test pads for electrically engaging the resilient contact structures on the functional components, and a test circuitry in electrical communication with the test board. An alternate embodiment test system includes a deformation apparatus configured to electrically engage the resilient contact structures, and to apply test signals to the components to identify defective components. e coordinate axis so that a voltage value at a reference current value lower than the maximum current value in the voltage-current characteristic including the influence of the polarization agrees with a reference voltage value at the reference current value in the voltage-current characteristic, which does not include the influence of the polarization but depends only on a pure resistance component of the battery, a difference value between the open circuit voltage value at the current being zero in the voltage-current characteristic not including the influence of the polarization and the estimated voltage value estimated on the basis of the voltage-current characteristic including the influence of the polarization shifted in the direction of the voltage coordinate axis is in advance calculated as a residual voltage drop value due to an influence of a residual polarization upon a completion of the discharge of the battery, thereafter, whenever the battery carries out a constant load discharge with a current value large enough to cancel a charge-side polarization arisen in the battery at least just before the discharge, the voltage-current characteristic including the influence of the polarization is newly calculated from the terminal voltage and the discharge current of the battery periodically measured during the constant load discharge, the newly calculated voltage-current characteristic including the influence of the polarization is shifted in the direction of a voltage coordinate axis so that a voltage value at the reference current value in the newly calculated voltage-current characteristic including the influence of the polarization agrees with the reference voltage value in the voltage-current characteristic not including the influence of the polarization when the voltage-current characteristic including the influence of the polarization is newly calculated, a present estimated voltage is estimated on the basis of the newly calculated voltage-current characteristic including the influence of the polarization shifted in the direction of the voltage coordinate axis, and a present open circuit voltage is computed by adding the residual voltage drop value to the present estimated voltage value. 5. The method for computing an open circuit voltage of a battery according to claim 4, wherein after the residual voltage drop value is calculated, whenever the battery carries out a constant load discharge with a current value large enough to cancel a charge-side polarization arisen in the battery at least just before the discharge, the voltage-current characteristic not including t