초록 ▼

A high purity silicon carbide powder, a production method thereof, and a high purity silicon carbide sintered body are provided. The silicon carbide powder contains impurity elements, each of the impurity elements being contained in an amount of at most 0.01 ppm; the production method of silicon car

A high purity silicon carbide powder, a production method thereof, and a high purity silicon carbide sintered body are provided. The silicon carbide powder contains impurity elements, each of the impurity elements being contained in an amount of at most 0.01 ppm; the production method of silicon carbide powder includes a burning step, in which amounts of carbon monoxide generated during burning are detected and temperature adjustments are controlled in accordance with the detected amounts, and a heat treatment step, in which silicon carbide powder obtained in the burning step is heat-treated in a vacuum atmosphere; and the silicon carbide sintered body is formed by sintering silicon carbide powder.

대표청구항 ▼

A high purity silicon carbide powder, a production method thereof, and a high purity silicon carbide sintered body are provided. The silicon carbide powder contains impurity elements, each of the impurity elements being contained in an amount of at most 0.01 ppm; the production method of silicon car

A high purity silicon carbide powder, a production method thereof, and a high purity silicon carbide sintered body are provided. The silicon carbide powder contains impurity elements, each of the impurity elements being contained in an amount of at most 0.01 ppm; the production method of silicon carbide powder includes a burning step, in which amounts of carbon monoxide generated during burning are detected and temperature adjustments are controlled in accordance with the detected amounts, and a heat treatment step, in which silicon carbide powder obtained in the burning step is heat-treated in a vacuum atmosphere; and the silicon carbide sintered body is formed by sintering silicon carbide powder. Hu et al., 435/297.4; US-5597805, 19970100, Breborowicz et al., 514/019; US-5631025, 19970500, Shockley et al., 424/678; US-5641405, 19970600, Keshaviah et al., 210/645; US-5679231, 19971000, Alexander et al., 204/627; US-5704915, 19980100, Melsky et al., 604/175; US-5712154, 19980100, Mullon et al., 435/297.4; US-5782796, 19980700, Din et al., 604/029; US-5824213, 19981000, Utterberg, 210/241; US-5938634, 19990800, Packard, 604/029; US-5944684, 19990800, Roberts et al., 604/005; US-5955450, 19990900, Breborowicz et al., 514/054; US-5968966, 19991000, Bergstrom, 514/400; US-5980481, 19991100, Gorsuch, 604/028; US-5984891, 19991100, Keilman et al.; US-6017942, 20000100, Bergstrom, 514/399; US-6074359, 20000600, Keshaviah et al., 604/029; US-6117122, 20000900, Din et al., 604/408; US-6146536, 20001100, Twardowski, 210/646; US-6196992, 20010300, Keilman et al., 604/067; US-6274103, 20010800, Taylor, 422/261; US-6284131, 20010900, Hogard et al., 210/143; US-6284139, 20010900, Piccirillo, 210/645; US-6293921, 20010900, Shinmoto et al., 604/029; US-6299769, 20011000, Falkvall et al., 210/232; US-6306836, 20011000, Martis et al., 514/058; US-6309673, 20011000, Duponchell et al., 424/717