초록 ▼

A power generation system (10) and associated methods to compensate for different power system output frequencies are provided. The system (10) preferably includes a turbine (12) having a turbine rotor (13) positioned to rotate at a preselected rotational frequency and a generator (20) positioned to

A power generation system (10) and associated methods to compensate for different power system output frequencies are provided. The system (10) preferably includes a turbine (12) having a turbine rotor (13) positioned to rotate at a preselected rotational frequency and a generator (20) positioned to generate a power system output current at a preselected power system frequency. The generator (20) preferably has a generator stator (22) and a generator rotor (25) positioned within the generator stator (22) to induce electromotive force to the generator stator (22). The generator rotor (25) preferably is coupled to the turbine rotor (13) and driven by the turbine rotor at substantially the same preselected rotational frequency. The system (10) also preferably includes a frequency differentiator (30) coupled to the generator rotor (25) and connected to the power system electrical current output to differentiate between the preselected power system output frequency and the preselected rotational frequency of the generator rotor (25) so that variations in the preselected power system output frequency appear as variations in the generator rotor alternating electrical current frequency.

대표청구항 ▼

A power generation system (10) and associated methods to compensate for different power system output frequencies are provided. The system (10) preferably includes a turbine (12) having a turbine rotor (13) positioned to rotate at a preselected rotational frequency and a generator (20) positioned to

A power generation system (10) and associated methods to compensate for different power system output frequencies are provided. The system (10) preferably includes a turbine (12) having a turbine rotor (13) positioned to rotate at a preselected rotational frequency and a generator (20) positioned to generate a power system output current at a preselected power system frequency. The generator (20) preferably has a generator stator (22) and a generator rotor (25) positioned within the generator stator (22) to induce electromotive force to the generator stator (22). The generator rotor (25) preferably is coupled to the turbine rotor (13) and driven by the turbine rotor at substantially the same preselected rotational frequency. The system (10) also preferably includes a frequency differentiator (30) coupled to the generator rotor (25) and connected to the power system electrical current output to differentiate between the preselected power system output frequency and the preselected rotational frequency of the generator rotor (25) so that variations in the preselected power system output frequency appear as variations in the generator rotor alternating electrical current frequency. tting access to said lower metal layer, said dielectric lining layer made of a photoresist material; and an electrical contact that fills said cavity and enables external electrical connection with said lower metal layer. 2. The semiconductor device of claim 1, further comprising a grounding trace that is disposed on said upper dielectric layer and that surrounds said cavity, said dielectric lining layer further extending on top of said upper dielectric layer to cover said grounding trace. 3. A semiconductor device comprising: a lower metal layer; a lower dielectric layer on top of said lower metal layer; an upper metal layer on top of said lower dielectric layer; an upper dielectric layer on top of said upper metal layer; a contact region formed as a cavity that extends through said upper dielectric layer, said upper metal layer and said lower dielectric layer for access to said lower metal layer; a dielectric lining layer made of a photoresist material that lines a surface of said cavity to isolate said upper metal layer from said lower metal layer while permitting access to said lower metal layer; and an electrical contact that fills said cavity and enables external electrical connection with said lower metal layer. 4. The semiconductor device of claim 3, further comprising a grounding trace that is disposed on said upper dielectric layer and surrounds said cavity. 5. The semiconductor device of claim 4, wherein said dielectric lining layer extends on top of said upper dielectric layer to cover said grounding trace. ent invention on May 23, 2000: --09/575,197, 09/575,195, 09/575,159, 09/575,132, 09/575,123, 09/575,148, 09/575,130, 09/575,165, 09/575,153, 09/575,118, 09/575,131, 09/575,116, 09/575,144, 09/575,139, 09/575,186, 09/575,185, 09/575,191, 09/575,145, 09/575,192, 09/575,181, 09/575,193, 09/575,156, 09/575,183, 09/575,160, 09/575,150, 09/575,169, 09/575,184, 09/575,128, 09/575,180, 09/575,149, 09/575,179, 09/575,187, 09/575,155, 09/575,133, 09/575,143, 09/575,196, 09/575,198, 09/575178, 09/575,164, 09/575,146, 09/575,174, 09/575,163, 09/575,168, 09/575,154, 09/575,129, 09/575,124, 09/575,188, 09/575,189, 09/575,162, 09/575,172, 09/575,170, 09/575,171, 09/575,161, 09/575,141, 09/575,125, 09/575,142, 09/575,140, 09/575,190, 09/575,138, 09/575,126, 09/575,127, 09/575,158, 09/575,117, 09/575,147, 09/575,152, 09/575,176, 09/575,115, 09/575,114, 091575,113, 09/575112, 09/575,111, 09/575,108, 09/575,109, 09/575,110-- The disclosure of these co-pending applications are incorporated herein by cross-reference.