IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0138248
(2002-05-06)
|
우선권정보 |
DE-0021608 (2001-05-04) |
발명자
/ 주소 |
- Behr, Gerhard
- Helbig, Peter
|
출원인 / 주소 |
- Patent-Treuhand-Gesellschaft fuer elektrische Gluehlampen mbH
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
4 인용 특허 :
7 |
초록
▼
An electric lamp, in particular a motor vehicle auxiliary light lamp, and a method for producing such a lam. The base of the lamp comprises an annular metal part (5) or resilient design for holding the lamp vessel (1), and a plastic part (6) provided with at least one hollow contact pin (7, 8). A su
An electric lamp, in particular a motor vehicle auxiliary light lamp, and a method for producing such a lam. The base of the lamp comprises an annular metal part (5) or resilient design for holding the lamp vessel (1), and a plastic part (6) provided with at least one hollow contact pin (7, 8). A supply lead (3, 4) projecting from the lamp vessel (1) is threaded into the hollow contact pin (7, 8) and welded to the latter such that the metal part (5) is under mechanical stress. In this way, backlash-free plug-and-socket connections are produced between the lamp vessel (1) and the metal part (5) or between the metal part (5) and the plastic part (6).
대표청구항
▼
An electric lamp, in particular a motor vehicle auxiliary light lamp, and a method for producing such a lam. The base of the lamp comprises an annular metal part (5) or resilient design for holding the lamp vessel (1), and a plastic part (6) provided with at least one hollow contact pin (7, 8). A su
An electric lamp, in particular a motor vehicle auxiliary light lamp, and a method for producing such a lam. The base of the lamp comprises an annular metal part (5) or resilient design for holding the lamp vessel (1), and a plastic part (6) provided with at least one hollow contact pin (7, 8). A supply lead (3, 4) projecting from the lamp vessel (1) is threaded into the hollow contact pin (7, 8) and welded to the latter such that the metal part (5) is under mechanical stress. In this way, backlash-free plug-and-socket connections are produced between the lamp vessel (1) and the metal part (5) or between the metal part (5) and the plastic part (6). film and a resist film on a surface of said carbon-containing film; patterning said resist film, and working said SOG film with said patterned resist film being employed as a mask; and etching said carbon-containing film with this worked SOG film being employed as a mask. 9. The manufacturing method according to claim 8, which further comprises a step of forming a reflection preventive film on said SOG film. 10. A method of manufacturing a semiconductor device, which comprises the steps of: forming an insulating film on a surface of a semiconductor substrate; forming a film of hard mask on a surface of said insulating film, and patterning said film of hard mask to obtain a hard mask; forming a carbon-containing film on said insulating film having said hard mask formed thereon, which is followed by a patterning work of said carbon-containing film to remove part of said carbon-containing film which is located in a first region of said semiconductor substrate to thereby obtain a patterned carbon-containing film which is located in a second region of said semiconductor substrate, thereby forming a mask; subjecting said insulating film to a first etching work with said hard mask of said first region and said mask of said second region being employed as a mask; removing said carbon-containing film located in said second region; and subjecting said insulating films of said first and second regions to a second etching work with said hard mask being employed as a mask. 11. The manufacturing method according to claim 10, wherein said hard mask is formed of a film of an insulating material which is different from said insulating film or a metal film. 12. The manufacturing method according to claim 10, wherein said carbon-containing film is formed of a material selected from the group consisting of a resist, a low dielectric constant insulating film, and carbon film. 13. The manufacturing method according to claim 10, wherein a metal film is buried in said insulating film to be subjected to said etching work. 14. The manufacturing method according to claim 10, wherein said process of patterning said carbon-containing film comprises the steps of: successively forming an SOG film and a resist film on a surface of said carbon-containing film; patterning said resist film, and working said SOG film with said patterned resist film being employed as a mask; and etching said carbon-containing film with this worked SOG film being employed as a mask. 15. The manufacturing method according to claim 14, which further comprises a step of forming a reflection preventive film on said SOG film. 16. The manufacturing method according to claim 10, which further comprises a step of burying a metal film in the wiring grooves and contact holes which are formed in said first and second etching works. 17. A method of manufacturing a semiconductor device, which comprises the steps of: forming a first insulating film on a surface of a semiconductor substrate; forming a film of hard mask on a surface of said first insulating film, and patterning said film of hard mask to obtain a hard mask; forming a carbon-containing film on said first insulating film having said hard mask formed thereon, which is followed by a patterning work of said carbon-containing film to form a mask; subjecting said first insulating film to a first etching work with said mask of carbon-containing film being employed as a mask; removing said mask of carbon-containing film; subjecting said first insulating film to a second etching work with said hard mask being employed as a mask; burying a metal film in the wiring grooves provided with contact holes and in said contact holes which are formed in said first and second etching works; forming a second insulating film on said first insulating film in which said metal film is buried; forming wiring grooves in said second insulating film, said wiring grooves allowing prescribed contact plugs that have been formed in
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