High impedence structures for multifrequency antennas and waveguides
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IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01Q-015/23
출원번호
US-0644876
(2000-08-23)
발명자
/ 주소
Hacker, Jonathan Bruce
Kim, Moonil
Higgins, John A.
출원인 / 주소
Innovative Technology Licensing, LLC
대리인 / 주소
Koppel, Jacobs, Patrick & Heybl
인용정보
피인용 횟수 :
17인용 특허 :
3
초록▼
A multi layered high impedance structure presents a high impedance to multiple frequency signals, with a different frequency for each layer. Each layer comprises a dielectric substrate, and an array of radiating elements such as parallel conductive strips or conductive patches on the substrate's top
A multi layered high impedance structure presents a high impedance to multiple frequency signals, with a different frequency for each layer. Each layer comprises a dielectric substrate, and an array of radiating elements such as parallel conductive strips or conductive patches on the substrate's top surface with a conductive layer on the bottom surface of the bottommost layer. The radiating elements of succeeding layers are vertically aligned with conductive vias extending through the substrates to connect the radiating elements to the ground plane. Each layer presents as a series of parallel resonant L-C circuits to an E field at a particular signal frequency, resulting in a high impedance surface at that frequency. The new structure can be used as the substrate for a microstrip patch antenna to provide an optimal electrical distance between the resonator and backplane at multiple frequencies. It can also be used in waveguides that transmit multiple signal frequencies signals in one polarization or that are cross-polarized. As a waveguide it maintains a near-uniform density E and H fields, resulting in near uniform signal power density across the waveguide's cross-section.
대표청구항▼
1. A high impedance structure, comprising: at least two layers, each said layer presenting a high impedance to the E field component of a different respective signal frequency, each said layer also being transparent to the E fields of lower frequency signals, and presenting a conductive surface t
1. A high impedance structure, comprising: at least two layers, each said layer presenting a high impedance to the E field component of a different respective signal frequency, each said layer also being transparent to the E fields of lower frequency signals, and presenting a conductive surface to the E field of higher frequency signals, each of said at least two layers having radiating elements that are vertically aligned with the radiating elements in the others of said at least two layers, the dimensions of said radiating elements being different at each of said at least two layers; and the bottommost said layer presenting a high impedance to the E field of the lowest frequency of said signals, and each succeeding layer presenting a high impedance to the E field of successively higher frequencies. 2. The structure of claim 1, wherein each said layer presents a series of resonant L-C circuits to the E field of a respective signal frequency. 3. The structure of claim 1, wherein each of said at least two layers comprises a respective substrate of dielectric material having a top and bottom surface, said radiating elements for each said at least two layers disposed on said top surface of said layer's respective substrate, and wherein said structure further comprises a conductive layer on the bottom surface of said dielectric substrate of the bottommost one of said at least two layers. 4. A high impedance structure, comprising: at least two layers, each said layer presenting a high impedance to the E field component of a different respective signal frequency, each said layer also being transparent to the E fields of lower frequency signals, and presenting a conductive surface to the E field of higher frequency signals; and the bottommost said layer presenting a high impedance to the E field of the lowest frequency of said signals, and each succeeding layer presenting a high impedance to the E field of successively higher frequencies, wherein each said layer comprises a respective substrate of dielectric material having a top and bottom surface and a corresponding plurality of radiating elements on each top surface of said substrate, and further comprising a conductive layer on the bottom surface of the bottommost layer's dielectric substrate, wherein said radiating elements comprise parallel conductive, strips. 5. The structure of claim 4, wherein said conductive strips on each said layer have uniform widths and uniform gaps between adjacent strips. 6. The structure of claim 4, wherein corresponding conductive strips of each said layers are vertically aligned, said structure further comprising conductive vias through said respective dielectric substrates between said aligned conductive strips and said conductive layer. 7. The structure of claim 4, wherein the thicknesses of said respective substrates from the topmost to the bottommost layer are progressively thicker, wherein radiating elements of said respective layers are vertically aligned, said structure further comprising conductive vias through said respective substrates between said aligned radiating elements and said conductive layer. 8. The structure of claim 7, wherein said radiating elements are substantially the same size at all said layers.
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이 특허에 인용된 특허 (3)
Cahill Robert,GBX, Frequency selective surface devices for separating multiple frequencies.
Thomas Michael D. (Thousand Oaks CA) Wolfson Ronald I. (Los Angeles CA) Glaser Jerome I. (Los Angeles CA) Smalanskas Joseph P. (Westchester CA) Hunter Shane H. (Redondo Beach CA) Tran Allen M. (Torra, Radiator bandwidth enhancement using dielectrics with inverse frequency dependence.
Sievenpiper, Daniel F.; Colburn, Joseph S.; Fong, Bryan Ho Lim; Ganz, Matthew W.; Gyure, Mark F.; Lynch, Jonathan J.; Ottusch, John; Visher, John L., Artificial impedance structure.
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