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An illuminating mailbox address indication device includes a generally rectangular shaped housing mounted on a top portion of a mailbox wherein at least one longitudinal wall is removable. Enclosed within the housing is a light means powered by at least one rechargeable battery energized by a solar

An illuminating mailbox address indication device includes a generally rectangular shaped housing mounted on a top portion of a mailbox wherein at least one longitudinal wall is removable. Enclosed within the housing is a light means powered by at least one rechargeable battery energized by a solar cell mounted upon the housing top wall in a recess formed therein. A photosensitive cell operates a switch to permit the light means to illuminate when a pre-determined threshold has been exceeded relevant to the amount of ambient light present around the mailbox (i.e., at night). At least one of the longitudinal housing side walls is translucent and further supports indica stenciled thereupon which represents the address of the property associated with the mailbox.

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An illuminating mailbox address indication device includes a generally rectangular shaped housing mounted on a top portion of a mailbox wherein at least one longitudinal wall is removable. Enclosed within the housing is a light means powered by at least one rechargeable battery energized by a solar

An illuminating mailbox address indication device includes a generally rectangular shaped housing mounted on a top portion of a mailbox wherein at least one longitudinal wall is removable. Enclosed within the housing is a light means powered by at least one rechargeable battery energized by a solar cell mounted upon the housing top wall in a recess formed therein. A photosensitive cell operates a switch to permit the light means to illuminate when a pre-determined threshold has been exceeded relevant to the amount of ambient light present around the mailbox (i.e., at night). At least one of the longitudinal housing side walls is translucent and further supports indica stenciled thereupon which represents the address of the property associated with the mailbox. ty of pistons reciprocable in spaces in contact with inner surfaces of the cylinders to produce pressure change in the inner spaces, wherein in each of said cylinders, said suction inlet is disposed more away from said seal member than said discharging outlet. g is conducted while cycling between an etching plasma and a passivation plasma. 5. The method of claim 4 wherein the etching plasma comprises a plasma derived from a gas selected from the group consisting of sulfur hexafluoride (SF6), tetrafluoromethane (CF4) and trifluoroamine (NF3). 6. The method of claim 5 wherein the etching plasma comprises a plasma derived from SF6. 7. The method of claim 4 wherein the passivation plasma comprises a plasma derived from a gas selected from the group consisting of trifluoromethane (CHF3), tetrafluoroethane (C2F4), hexafluoroethane (C2F6), difluoroethane (C2H2F2), octofluorobutane (C4F8) and mixtures thereof. 8. The method of claim 7 wherein the passivation plasma comprises a plasma derived from C4F8. 9. The method of claim 1 wherein the dry etching is selected from deep reactive ion etching (DRIE) and inductively coupled plasma (ICP) etching techniques. 10. The method of claim 1 further comprising dry etching an ink via through the passivation layer and silicon wafer to provide an ink flow path in ink flow communication with the pressurizing chambers. 11. The method of claim 1 further comprising applying a passivation layer to the second surface of the silicon wafer and applying the photoresist layer to the passivation layer. 12. An ink jet printer comprising a printhead made by the method of claim 1. 13. An ink jet printer comprising a printhead made by the method of claim 11. 14. A piezoelectric printhead for an ink jet printer, the printhead comprising a silicon wafer having a thickness ranging from about 200 to about 800 microns, a first surface and a second surface; the first surface of the silicon wafer containing an insulating layer, conducting layer, piezoelectric layer and electrical contact layer and the second surface of the silicon wafer optionally containing a passivation layer, the silicon wafer further including a plurality of pressurizing chambers having substantially vertical walls, the pressurizing chambers being dry etched in the silicon wafer through the optional passivation layer on the second surface up to the insulating layer on the first surface; the printhead further comprising a nozzle plate containing nozzle holes corresponding to each of the pressurizing chambers, the nozzle plate being adhesively attached to the second surface of the silicon wafer, wherein the insulating layer and passivation layer are applied with a thickness ratio of insulating layer and passivation layer to silicon wafer ranging from about 1:10 to about 1:800. 15. The printhead of claim 14 further comprising an ink via in flow communication with the pressurizing chambers, the ink via being dry etched through the silicon wafer, insulating layer and optional passivation layer. 16. The printhead of claim 14 wherein the passivation layer has a thickness ranging from about 0.1 to about 10 microns. 17. The printhead of claim 14 wherein the pressurizing chambers have a depth ranging from about 190 to about 795 microns. 18. An inkjet printer comprising a printhead of claim 14. 19. The printhead of claim 14 wherein the insulating layer and conducting layer define a diaphragm having a thickness ranging from about 3 to about 10 microns. 20. A method for making piezoelectric printheads for ink jet printers comprising applying an insulating layer to a first surface of a silicon wafer having a silicon wafer thickness ranging from about 200 to about 800 microns, applying a photoresist layer to a second surface of the silicon wafer or to an optional passivation layer on the second surface of the silicon wafer, imaging and developing the photoresist layer to provide pressurizing chamber locations, dry etching the silicon wafer through the thickness of the wafer up to the insulating layer on the first surface of the wafer to provide pr