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A charge storage device comprising: a first electrode; a second electrode being opposed to and spaced apart from the first electrode; a porous separator disposed between the electrodes; a sealed package for containing the electrodes, the separator and an electrolyte in which the electrodes are immer

A charge storage device comprising: a first electrode; a second electrode being opposed to and spaced apart from the first electrode; a porous separator disposed between the electrodes; a sealed package for containing the electrodes, the separator and an electrolyte in which the electrodes are immersed; and a first terminal and a second terminal being electrically connected to the first electrode and the second electrode respectively and both extending from the package to allow external electrical connection to the respective electrodes, wherein the gravimetric FOM of the device is greater than about 2.1 Watts/gram. Also described is a method of manufacturing a charge storage device, the method comprising the steps of: providing a first electrode; disposing a second electrode in opposition to and spaced apart from the first electrode; disposing a porous separator between the electrodes; containing within a sealed package the electrodes, the separator and an electrolyte, wherein the electrodes are immersed in the electrolyte; and electrically connecting a first terminal and a second terminal to the first electrode and the second electrode respectively such that the terminals extending from the package to allow external electrical connection to the respective electrodes, wherein the gravimetric FOM of the device is greater than about 2.1 Watts/gram.

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A charge storage device comprising: a first electrode; a second electrode being opposed to and spaced apart from the first electrode; a porous separator disposed between the electrodes; a sealed package for containing the electrodes, the separator and an electrolyte in which the electrodes are immer

A charge storage device comprising: a first electrode; a second electrode being opposed to and spaced apart from the first electrode; a porous separator disposed between the electrodes; a sealed package for containing the electrodes, the separator and an electrolyte in which the electrodes are immersed; and a first terminal and a second terminal being electrically connected to the first electrode and the second electrode respectively and both extending from the package to allow external electrical connection to the respective electrodes, wherein the gravimetric FOM of the device is greater than about 2.1 Watts/gram. Also described is a method of manufacturing a charge storage device, the method comprising the steps of: providing a first electrode; disposing a second electrode in opposition to and spaced apart from the first electrode; disposing a porous separator between the electrodes; containing within a sealed package the electrodes, the separator and an electrolyte, wherein the electrodes are immersed in the electrolyte; and electrically connecting a first terminal and a second terminal to the first electrode and the second electrode respectively such that the terminals extending from the package to allow external electrical connection to the respective electrodes, wherein the gravimetric FOM of the device is greater than about 2.1 Watts/gram. of claim 8 wherein said capacitors are operatively connected within said gain stages to produce two poles in a frequency response of said gain stages. 11. The amplifier of claim 8 wherein said capacitors are operatively connected within said gain stages to produce three poles in a frequency response of said gain stages. 12. The amplifier of claim 8 wherein said gain stages are differential amplifiers, at least one of which being connected to receive said signal representing changes in said magneto-resistive head as a differential input. 13. A mass data storage device system having a moving media containing signals encoded in oriented magnetic domains, comprising: a magneto-resistive head positioned in proximity to said moving media wherein an electrical characteristic of said head is changed in accordance with said oriented magnetic domains; an amplifier stage connected to sense said change in said electrical characteristic of said head; and capacitors operatively connected within said amplifier stage to produce at least a pair of poles in a frequency response of said amplifier stage. 14. The device of claim 13 wherein said capacitors produce said poles at substantially identical pole locations. 15. The device of claim 13 wherein said electrical characteristic has a second order frequency response that is reduced by said pair of poles established by said capacitors. 16. The device of claim 13 wherein said amplifier stage comprises at least two differential amplifiers, a first of said differential amplifiers being connected to sense a voltage across said magneto-resistive head; and wherein said capacitors comprise at least a pair of capacitors each associated with a respective one of said differential amplifiers to produce a pair of poles in said frequency response of said amplifier stage. 17. The device of claim 16 wherein said at least a pair of capacitors comprises two pair of capacitors, each pair being contained within a respective one of said differential amplifiers. 18. The device of claim 13 wherein said amplifier stage comprises three differential amplifiers, at least a first of said differential amplifiers being connected to sense a voltage across said magneto-resistive head; and wherein said capacitors comprise at least three capacitors each associated with a respective one of said differential amplifiers to produce three poles in said frequency response of said amplifier stage. 19. The device of claim 18 wherein said at least three capacitors comprise three pair of capacitors, each pair contained within a respective one of said differential amplifiers. ted with the stored BEMF. The amplitude and duration of the drive current correspondingly decreases as the BEMF in the voice coil decreases. Thus, the voice coil is controlled based on its BEMF and is provided with decreasing power to move a head mechanism to or from a ramp assembly. n said at least one separable means comprises a relay lens for each light path. 6. The system of claim 5, wherein said relay lens is disposed between said barrier filter and said hole of said output path structure. 7. The system of claim 5, wherein said barrier filter is disposed between said relay lens and said hole of said output path structure. 8. The system of claim 1, wherein said sample is exposed to a fluorescent agent. 9. The system of claim 1, wherein said means for separating one of the following devices: a flat plate mirror, beam splitter, a diffraction grating, a prism, and a spectral prism. gain bandwidth of the Raman amplifier and the second wavelength falls within a gain bandwidth of the rare-earth doped optical amplifier. 12. The system of claim 7 further comprising: a gain tilt control device coupled to at least one of the splitter, Raman amplifier, rare-earth doped optical amplifier or combiner. 13. A broadband booster amplifier, comprising: a plurality of transmitters transmitting a plurality of wavelengths including at least a first band of wavelengths and a second band of wavelengths; a Raman amplifier coupled to at least a portion of the plurality of transmitters and amplifies the first band of wavelengths; a rare-earth doped optical amplifier coupled to at least a portion of the plurality of transmitters and amplifies the second band of wavelengths; a WDM combiner coupled to the Raman amplifier and the rare-earth doped optical amplifier, the WDM combiner combining an optical signal into at least a first wavelength and a second wavelength, wherein a transition from a stop band to a pass band of the combiner occurs in 20 nm or less; and an output fiber coupled to the WDM combiner. 14. The amplifier of claim 13, wherein the transition from the stop band to the pass band of the combiner occurs in 15 nm or less. 15. The amplifier of claim 13, further comprising: a gain tilt control device coupled to at least one of the Raman amplifier, rare-earth doped optical amplifier or combiner. 16. A broadband communication system, comprising: a transmitter; at least one input fiber coupled to the transmitter a WDM splitter coupled to the input fiber, the splitter splitting an optical signal into at least a first wavelength and a second wavelength, wherein a transition from a stop band to a pass band of the splitter occurs in 20 nm or less; a Raman amplifier coupled to the splitter; a rare-earth doped optical amplifier coupled to the splitter; a WDM combiner coupled to the Raman amplifier and the rare-earth doped optical amplifier, the WDM combiner combining an optical signal into at least a first wavelength and a second wavelength, wherein a transition from a stop band to a pass band of the combiner occurs in 20 nm or less; an output fiber coupled to the WDM combiner; at least one in-line broadband amplifier coupled to the output fiber; a receiver coupled to the in-line amplifier. 17. The system of claim 16, wherein the in-line amplifier comprises: at least one input fiber a WDM splitter coupled to the input fiber, the splitter splitting an optical signal into at least a first wavelength and a second wavelength, wherein a transition from a stop band to a pass band of the splitter occurs in 20 nm or less; a Raman amplifier coupled to the splitter; a rare-earth doped optical amplifier coupled to the splitter; a WDM combiner coupled to the Raman amplifier and the rare-earth doped optical amplifier, the WDM combiner combining an optical signal into at least a first wavelength and a second wavelength, wherein a transition from a stop band to a pass band of the combiner occurs in 20 nm or less; and an output fiber coupled to the WDM combiner. 18. A broadband pre-amplifier, comprising: at least one input fiber a WDM splitter coupled to the input fiber, the splitter splitting an optical signal into at least a first wavelength and a second wavelength, wherein a transition from a stop band to a pass band of the splitter occurs in 20 nm or less; a Raman amplifier coupled to the splitter; a rare-earth doped optical amplifier coupled to the splitter; a plurality of receivers, wherein at least a first portion of the plurality of receivers is coupled to the Raman amplifier and at least a second portion of the receivers is coupled to the rare-earth doped optical amplifier. 19. A broadband communication system, comprising: a transmitter; at least one input fiber coupled to the transmitter; a WDM splitter coupled to the input fiber, the splitter splitting an optical signal into at l east a first beam and a second beam, wherein a transition from a stop band to a pass band of the coupler occurs in 15 nm or less; a Raman amplifier coupled to the splitter; a rare-earth doped optical amplifier coupled to the splitter; a WDM combiner coupled to the Raman amplifier and the rare-earth doped optical amplifier, the WDM combiner combining an optical signal into at least a first beam and a second beam, wherein a transition from a stop band to a pass band of the coupler occurs in 15 nm or less; and an output fiber coupled to the WDM combiner a receiver coupled to the output fiber. 20. A broadband communication system, comprising: a broadband booster amplifier; at least one input fiber coupled to the broadband booster amplifier; a WDM splitter coupled to the input fiber, the splitter splitting an optical signal into at least a first beam and a second beam, wherein a transition from a stop band to a pass band of the coupler occurs in 15 nm or less; a Raman amplifier coupled to the splitter; a rare-earth doped optical amplifier coupled to the splitter; a WDM combiner coupled to the Raman amplifier and the rare-earth doped optical amplifier, the WDM combiner combining an optical signal into at least a first beam and a second beam, wherein a transition from a stop band to a pass band of the coupler occurs in 15 nm or less; and an output fiber coupled to the WDM combiner a receiver coupled to the output fiber. 21. The system of claim 20, wherein the broadband booster amplifier comprises: a plurality of transmitters transmitting a plurality of wavelengths including at least a first band of wavelengths and a second band of wavelengths; a Raman amplifier coupled to at least a portion of the plurality of transmitters and amplifies the first band of wavelengths; a rare-earth doped optical amplifier coupled to at least a portion of the plurality of transmitters and amplifies the second band of wavelengths; a WDM combiner coupled to the Raman amplifier and the rare-earth doped optical amplifier, the WDM combiner combining an optical signal into at least a first wavelength and a second wavelength, wherein a transition from a stop band to a pass band of the combiner occurs in 20 nm or less; and an output fiber coupled to the WDM combiner. 22. A broadband communication system, comprising: a transmitter; at least one input fiber coupled to the transmitter; a WDM splitter coupled to the input fiber, the splitter splitting an optical signal into at least a first beam and a second beam, wherein a transition from a stop band to a pass band of the coupler occurs in 15 nm or less; a Raman amplifier coupled to the splitter; a rare-earth doped optical amplifier coupled to the splitter; a WDM combiner coupled to the Raman amplifier and the rare-earth doped optical amplifier, the WDM combiner combining an optical signal into at least a first beam and a second beam, wherein a transition from a stop band to a pass band of the coupler occurs in 15 nm or less; and an output fiber coupled to the WDM combiner a broadband pre-amplifier coupled to the output fiber. 23. The system of claim 22, wherein the broadband pre-amplifier comprises: at least one input fiber a WDM splitter coupled to the input fiber, the splitter splitting an optical signal into at least a first wavelength and a second wavelength, wherein a transition from a stop band to a pass band of the splitter occurs in 20 nm or less; a Raman amplifier coupled to the splitter; a rare-earth doped optical amplifier coupled to the splitter; a plurality of receivers, wherein at least a first portion of the plurality of receivers is coupled to the Raman amplifier and at least a second portion of the receivers is coupled to the rare-earth doped optical amplifier. 24. A broadband communication system, comprising: a transmitter; a booster broadband amplifier coupled to the transmitter; at least one input fiber coupled to booster amplifier; a WDM sp