IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0273041
(2002-10-17)
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발명자
/ 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
17 인용 특허 :
5 |
초록
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A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C--SiC, and hexagonal SiC, wherein the quantum dots are sandwiched bet
A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C--SiC, and hexagonal SiC, wherein the quantum dots are sandwiched between an n-type semiconductor cladding layer selected from a group consisting of SiC, 3C--SiC, 4H--SiC, 6H--SiC and diamond, and a p-type semiconductor cladding layer selected from a group consisting of SiC, 3C--SiC, 4H--SiC, 6H--SiC and diamond. A Ni contact is provided for the n-type cladding layer. An Al, a Ti or an Al/Ti alloy contact is provided for the p-type cladding layer. The quantum dots have a thickness that is no greater than about 250 Angstroms, a width that is no greater than about 200 Angstroms, and a center-to-center spacing that is in the range of from about 10 Angstroms to about 1000 Angstroms.
대표청구항
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A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C--SiC, and hexagonal SiC, wherein the quantum dots are sandwiched bet
A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C--SiC, and hexagonal SiC, wherein the quantum dots are sandwiched between an n-type semiconductor cladding layer selected from a group consisting of SiC, 3C--SiC, 4H--SiC, 6H--SiC and diamond, and a p-type semiconductor cladding layer selected from a group consisting of SiC, 3C--SiC, 4H--SiC, 6H--SiC and diamond. A Ni contact is provided for the n-type cladding layer. An Al, a Ti or an Al/Ti alloy contact is provided for the p-type cladding layer. The quantum dots have a thickness that is no greater than about 250 Angstroms, a width that is no greater than about 200 Angstroms, and a center-to-center spacing that is in the range of from about 10 Angstroms to about 1000 Angstroms. oration of Aranucleotides into DNA," Cell Biochem. Biophys., 30:331-352 (1999). Perrino et al., "Identification of a 3'-5'-Exanuclease That Removes Cytosine Arabinoside Monophosphate from 3' Termini of DNA," J. Biol. Chem., 269:16357-16363 (1994). Sambrook et al., (Eds.), "Molecular Cloninig: A Laboratory Manual," Cold Spring Harbor Laboratory Press: Cold Spring Harbor, New York (1989) pp. 9.47-9.51. Skalski et al., "Removal of Anti-Human Immunodeficiency Virus 2',3'-Dideoxynucleoside Monophosphates from DNA by a Novel Human Cytosolic 3'-5' Exonuclease," Biochem. Pharmacol., 50(6):815-21 (1995). Verma, "Treatment of disease by introducing healthy genes into the body is becoming feasible. But the therapy will not reach its full potential untill the genes can be coaxed to work throughout life," Scientific America, 68-72, 81-84 (1990). Zimm et al., "Cellular Pharmacokinetics of Mercaptopurine in Human Neoplastic Cells and Cell Lines," Cancer Res. 45:4156-4161 (1985). microorganisms comprising: a substrate having a top side, a pedestal mounted on the top side of the substrate and comprising a non-absorbent culture surface, a flexible cover sheet attached to the substrate and comprising a bottom surface, and a culture medium deposited on one or more surfaces selected from: the culture surface, and the cover sheet bottom surface; placing a sample on the culture surface; covering the sample with the cover sheet; incubating the device; and detecting the microorganisms. 19. The method of claim 18 wherein the culture medium comprises a cold-water-soluble gelling agent, one or more nutrients, or a combination thereof. 20. The method of claim 18 wherein the culture medium further comprises an indicator.
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