초록 ▼

The present invention generally provides a deposition chamber for depositing materials which require vaporization, especially low volatility precursors, which are transported as a liquid to a vaporizer to be converted to vapor phase through one or more vaporizing elements and which must be transport

The present invention generally provides a deposition chamber for depositing materials which require vaporization, especially low volatility precursors, which are transported as a liquid to a vaporizer to be converted to vapor phase through one or more vaporizing elements and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. In one aspect, the chamber comprises a series of heated temperature controlled internal liners as vaporizing surfaces which are configured for rapid removal, cleaning and/or replacement and preferably are made of a material having a thermal coefficient of expansion close to that of the deposition material. The vaporizing surfaces "flash" sprayed liquid precursors on the surface of the vaporizing surfaces and then purify the flashed precursors before flowing further into the system. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. Preferably, internal surfaces of the chamber are adjustable and maintainable at a suitable temperature above ambient, e.g., about 150° C. to about 300° C., to prevent decomposition and/or condensation of vaporized material on the chamber and related gas flow surfaces.

대표청구항 ▼

The present invention generally provides a deposition chamber for depositing materials which require vaporization, especially low volatility precursors, which are transported as a liquid to a vaporizer to be converted to vapor phase through one or more vaporizing elements and which must be transport

The present invention generally provides a deposition chamber for depositing materials which require vaporization, especially low volatility precursors, which are transported as a liquid to a vaporizer to be converted to vapor phase through one or more vaporizing elements and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. In one aspect, the chamber comprises a series of heated temperature controlled internal liners as vaporizing surfaces which are configured for rapid removal, cleaning and/or replacement and preferably are made of a material having a thermal coefficient of expansion close to that of the deposition material. The vaporizing surfaces "flash" sprayed liquid precursors on the surface of the vaporizing surfaces and then purify the flashed precursors before flowing further into the system. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. Preferably, internal surfaces of the chamber are adjustable and maintainable at a suitable temperature above ambient, e.g., about 150° C. to about 300° C., to prevent decomposition and/or condensation of vaporized material on the chamber and related gas flow surfaces. comprises one or more filters disposed therein. 17. The process chamber of claim 16, further comprising a vacuum pump disposed downstream of said vaporizer. 18. The process chamber of claim 13, wherein said filter comprises sintered stainless steel, titanium, nickel, aluminum, aluminum oxide, barium strontium titanate, aluminum nitride, silicon carbide, or combinations thereof. 19. A process chamber for depositing a film, comprising: a chamber body having one or more temperature controlled surfaces; a lid movably mounted on the chamber body, said lid having a heated main body and a temperature controlled collar; a gas feedthrough fluidicly coupled to said chamber and to a gas source, said feedthrough having a heating member; and a tubular filter disposed in the gas feedthrough. 20. The process chamber of claim 19, wherein said filter is disposed longitudinally along the length of said gas feedthrough. 21. The process chamber of claim 19, wherein said filter has a porosity of about 5 μm to about 100 μm. 22. The process chamber of claim 19, further comprising a vaporizer fluidicly coupled upstream to said gas feedthrough. 23. The process chamber of claim 22, further comprising a vacuum pump disposed downstream of said vaporizer. 24. The process chamber of claim 13, wherein the filter is tubular. 25. The process chamber of claim 13, wherein the cavity volume is disposed laterally relative to the process volume. 26. The process chamber of claim 13, wherein the filter has a pore size and a surface area sufficient to prevent an excessive pressure differential from forming across said filter. 27. A gas feedthrough for a processing chamber, comprising: a conduit having an inlet and an outlet, the conduit defining a surface for forming seal with the chamber; a tubular filter disposed in the conduit; and a heating member disposed along the length of said conduit. 28. The gas feedthrough of claim 27, wherein said filter has a porosity of about 5 μm to about 100 μm.