Method of regenerating a phase-change sputtering target for optical storage media
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B22F-003/12
B22F-007/04
출원번호
US-0094812
(2002-03-12)
우선권정보
TW-90105821 A (2001-03-13)
발명자
/ 주소
Wen, Jyh-Chung
Lai, Ming-Shyong
Li, Bean-Jon
출원인 / 주소
Industrial Technology Research Institute
대리인 / 주소
Birch, Stewart, Kolasch & Birch, LLP
인용정보
피인용 횟수 :
12인용 특허 :
6
초록▼
A method of regenerating a phase-change sputtering target for optical storage media. First, a used powder-metallurgy sputtering target composed of a target material, an adhesion material, and a backing plate is recycled. Then, the target material is separated from the backing plate. Then, the target
A method of regenerating a phase-change sputtering target for optical storage media. First, a used powder-metallurgy sputtering target composed of a target material, an adhesion material, and a backing plate is recycled. Then, the target material is separated from the backing plate. Then, the target adhesion material is scraped from the recycled target material Thereafter, the surface of the recycled target material is processed. Finally, the backing plate, a new adhesion material, the recycled target material, and new powders are placed in a vacuum thermal-pressure furnace in sequence to perform a thermal-pressure sintering process. This completes a new phase-change sputtering target
대표청구항▼
1. A method of regenerating a powder-metallurgy sputtering target, comprising steps of: (a) recycling a used powder-metallurgy sputtering target which comprises a target material made by powder metallurgy, an adhesion material and a backing plate of alloy; (b) separating the target material from
1. A method of regenerating a powder-metallurgy sputtering target, comprising steps of: (a) recycling a used powder-metallurgy sputtering target which comprises a target material made by powder metallurgy, an adhesion material and a backing plate of alloy; (b) separating the target material from the backing plate (c) scraping the adhesion material from the target material; (d) processing the surface of the target material; and (e) placing the backing plate, a new adhesion material, the target material and new powder in sequence into a vacuum thermal-pressure furnace to perform a thermal-pressure sintering process to form a new powder-metallurgy sputtering target. 2. The method according to claim 1, wherein step (b) heats the target material at 200_300° C. for 10_30 minutes. 3. The method according to claim 1, wherein step (d) comprises: (d1) machining the surface of the target material to remove contamination therefrom and bring the surface of the target material to a predetermined roughness; (d2) cleaning the surface of the target material; and (d3) drying the surface of the target material. 4. The method according to claim 3, wherein step (d2) uses a water-washing method to remove oil sludge from the roughened surface of the target material. 5. The method according to claim 3, wherein step (d3) bakes the target material in a vacuum oven. 6. The method according to claim 1, further comprising, after completing step (b), a step (f): using a powder treatment to form the target material as recycled powders. 7. The method according to claim 6, wherein step (e) adds the recycled powders to the target material in the vacuum thermal-pressure furnace. 8. The method according to claim 6, wherein the recycled powders can replace the new powders used in step (e). 9. The method according to claim 6, wherein step (f) comprises: (f1) smashing the target material; (f2) grinding the target material to form the recycled powders; and (f3) performing a high-temperature reduction on the recycled powders. 10. The method according to claim 1, wherein the used powder-metallurgy sputtering target is a phase-change sputtering target. 11. The method according to claim 1, wherein the target material is of phase-change materials. 12. The method according to claim 1, wherein the backing plate is copper alloy. 13. The method according to claim 1, wherein the adhesion material is indium (In). 14. The method according to claim 1, wherein the new powders used in step (e) and the target material are the same powder-metallurgy material.
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이 특허에 인용된 특허 (6)
Kawaguchi Yukio,JPX, Alloy target, its fabrication, and regeneration processes.
Ivanov Eugene Y. (Grove City OH) Grigoriva Tatyana F. (Spartaka RUX) Boldyrev Vladimir V. (Tereshkova RUX), Methods and structural combinations providing for backing plate reuse in sputter target/backing plate assemblies.
Ivanov Eugene Y. (Grove City OH) Grigoriva Tatyana F. (Spartaka RUX) Boldyrev Vladimir V. (Tereshkova RUX), Methods of bonding targets to backing plate members using gallium based solder pastes and target/backing plate assemblie.
Ivanov Eugene Y. (Grove City OH) Grigoriva Tatyana F. (Spartaka RUX) Boldyrev Vladimir V. (Tereshkove RUX), Methods of bonding targets to backing plate members using solder pastes and target/backing plate assemblies bonded there.
Schlott Martin (Hanau DEX) Dauth Wolfgang (Frankfurt am Main DEX) Kutzner Martin (Neuberg DEX), Process for the recycling of spent indium oxide-tin oxide sputtering targets.
Miller, Steven A.; Kumar, Prabhat; Wu, Richard; Sun, Shuwei; Zimmermann, Stefan; Schmidt-Park, Olaf, Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom.
Yi, Wuwen; Heckman, William; Kunkel, Bernd; Derrington, Carl; Griffin, Patrick, Methodology for recycling Ru and Ru-alloy deposition targets and targets made of recycled Ru and Ru-based alloy powders.
Scheible, Kathleen; Flanigan, Michael Allen; Yoshidome, Goichi; Allen, Adolph Miller; Pavloff, Cristopher M., Process kit and target for substrate processing chamber.
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