The present invention provides a high output storage battery with a high reliability that is easy to fabricate. This storage battery comprises a plurality of monoblock containers united to each other with space provided between the adjacent monoblock containers and one common cover to seal the openi
The present invention provides a high output storage battery with a high reliability that is easy to fabricate. This storage battery comprises a plurality of monoblock containers united to each other with space provided between the adjacent monoblock containers and one common cover to seal the openings of those monoblock containers. Each monoblock container has a plurality of cell compartments separated from each other by partitions. Each of those cell compartments houses an assembly element comprising a plurality of positive electrode plates and negative electrode plates stacked with separators placed between them.
대표청구항▼
The present invention provides a high output storage battery with a high reliability that is easy to fabricate. This storage battery comprises a plurality of monoblock containers united to each other with space provided between the adjacent monoblock containers and one common cover to seal the openi
The present invention provides a high output storage battery with a high reliability that is easy to fabricate. This storage battery comprises a plurality of monoblock containers united to each other with space provided between the adjacent monoblock containers and one common cover to seal the openings of those monoblock containers. Each monoblock container has a plurality of cell compartments separated from each other by partitions. Each of those cell compartments houses an assembly element comprising a plurality of positive electrode plates and negative electrode plates stacked with separators placed between them. in said ratio HkB/HkA is at least 0.4 and not more than 0.65. 3. A thin film magnetic recording medium, having: at least 2 magnetic layers formed on a non-magnetic substrate; and a non-magnetic intermediate layer that is interposed between said magnetic layers and causes magnetizations of said magnetic layers to be anti-parallel to one another; wherein a ratio HkB/HkA of an anisotropic magnetic field strength HkB of a magnetic layer on a side near to said substrate to an anisotropic magnetic field strength HkA of a magnetic layer on a side far from said substrate is 0.7 or less, and wherein a ratio HcoB/HcoA of a coercivity HcoB of the magnetic layer B on the side near to said substrate at 0K as obtained by extrapolating values of coercivity at 200K and 100K to a coercivity HcoA of the magnetic layer A on the side far from said substrate at 0K as obtained by extrapolating values of coercivity at 200K and 100K is 0.7 or less. 4. The magnetic recording medium according to claim 3, wherein said ratio HcoB/HcoA is at least 0.4 and not more than 0.65. 5. A thin film magnetic recording medium, having: at least 2 magnetic layers formed on a non-magnetic substrate; and a non-magnetic intermediate layer that is interposed between said magnetic layers and causes magnetizations of said magnetic layers to be anti-parallel to one another; wherein a ratio HkB/HkA of an anisotropic magnetic field strength HkB of a magnetic layer on a side near to said substrate to an anisotropic magnetic field strength HkA of a magnetic layer on a side far from said substrate is 0.7 or less, and wherein a value (HcoA-HcoB)/(πa*dH/dx) is 0.8 or more, where HcoB is a coercivity of the magnetic layer B on the side near to said substrate at 0K as obtained by extrapolating values thereof at 200K and 100K, HcoA is a coercivity of the magnetic layer A on the side far from said substrate at 0K as obtained by extrapolating values thereof at 200K and 100K, dH/dx is a derivative in a track direction of a track direction component of a magnetic field from a magnetic recording head used together with said magnetic recording medium in a magnetic recording/playback device, taken in a position where said track direction component is HcoA in the center of the track and the center of the thickness direction of said magnetic layer A, and πa is a magnetic transition width of an isolated transition formed on said magnetic recording medium using said magnetic recording head. 6. The magnetic recording medium according to claim 5, wherein said value (HcoA-HcoB)/(πa*dH/dx) is at least 0.9 and not more than 1.5. 7. A thin film magnetic recording medium, having: at least 2 magnetic layers formed on a non-magnetic substrate; and a non-magnetic intermediate layer that is interposed between said magnetic layers and causes magnetizations of said magnetic layers to be anti-parallel to one another; wherein a ratio KuB/KuA of a magnetic anisotropy energy KuB of a magnetic layer on a side near to said substrate to a magnetic anisotropy energy KuA of a magnetic layer on a side far from said substrate is 0.7 or less. 8. The magnetic recording medium according to claim 7, wherein said ratio KuB/KuA is at least 0.4 and not more than 0.65. 9. A thin film magnetic recording medium, having: at least 2 magnetic layers formed on a non-magnetic substrate; and a non-magnetic intermediate layer that is interposed between said magnetic layers and causes magnetizations of said magnetic layers to be anti-parallel to one another; wherein a ratio HkB/HkA of an anisotropic magnetic field strength HkB of a magnetic layer on a side near to said substrate to an anisotropic magnetic field strength HkA of a magnetic layer on a side far from said substrate is 0.7 or less, and wherein during a process in which, at a temperature of 30K, a magnetic field is applied in a track direction to cause magnetic saturation, then the magnetic field is reduced at a rate of 3,000A/m per second, and th en a magnetic field is applied in an opposite direction to cause magnetic saturation, the derivative of magnetization with respect to magnetic field strength has at least 2 peaks, and the magnetic field strengths giving said peaks are all in said direction of the last magnetic saturation. 10. The magnetic recording medium according to claim 9, wherein during a process in which, at a temperature of 135K, a magnetic field is applied in the track direction to cause magnetic saturation, then the magnetic field is reduced at a rate of 3,000A/m per second, and then a magnetic field is applied in the opposite direction to cause magnetic saturation, the derivative of magnetization with respect to magnetic field strength has at least 2 peaks, and at least one of the magnetic field strengths giving said peaks is in said direction of the last magnetic saturation. 11. A thin film magnetic recording medium, having: at least 2 magnetic layers formed on a non-magnetic substrate; and a non-magnetic intermediate layer that is interposed between said magnetic layers and causes magnetizations of said magnetic layers to be anti-parallel to one another; wherein a ratio HkB/HkA of an anisotropic magnetic field strength HkB of a magnetic layer on a side near to said substrate to an anisotropic magnetic field strength HkA of a magnetic layer on a side far from said substrate is 0.7 or less, and wherein said magnetic recording medium comprises at least 2 magnetic layers formed on a non-magnetic substrate; and a non-magnetic intermediate layer that is interposed between said magnetic layers and causes magnetizations of said magnetic layers to be anti-parallel to one another, and wherein a saturation magnetization of said magnetic layer on a side near to said substrate is larger than a saturation magnetization of said magnetic layer on a side far from said substrate. 12. The magnetic recording medium according to claim 1, wherein said magnetic layer on a side near to said substrate comprises either Co, or an alloy having Co as a principal component and also containing at least one element selected from Fe, Ni, Cr, Ta, Pt and Pd, and also B (boron). 13. The magnetic recording medium according to claim 1, wherein said non-magnetic intermediate layer comprises an alloy containing at least 50 at % of at least one metallic element selected from the group consisting of Ru, Ir, Rh, Re, Cu, Cr and Al, or an alloy containing a total of at least 50 at % of at least one element selected from Ru, Ir and Rh and at least one element selected from Pt and Pd. 14. The magnetic recording medium according to claim 13, wherein said non-magnetic intermediate layer is formed using an RF sputtering method. 15. The magnetic recording medium according to claim 1, wherein said magnetic layer on a side far from said substrate comprises a crystalline magnetic material containing at least 50 at % of at least one metallic element selected from the group consisting of Co, Fe and Ni, and said magnetic layer on a side near to said substrate is formed on a non-magnetic ground layer containing at least 50 at % of at least one element selected from the group consisting of Cr, Mo, W, Ta, V, Nb, Ti, Ge, Si, Co and Ni. 16. A magnetic storage device that carries out playback of magnetic information, and which combines the magnetic recording medium according to claim 1 and a magnetic head having a playback element that uses a giant magneto-resistive effect element or a tunnel-coupled film exhibiting a magneto-resistive effect and has an effective track width of 0.5 μm or less. 17. The magnetic recording medium according to claim 5, having a recording unit which employs a head in which magnetic poles having a saturation magnetic flux density of at least 1.8T are used.
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이 특허에 인용된 특허 (4)
Mejia Santiago (Cerrera 30 No. 12-99 Bogota COX), Novel electric storage battery assembly.
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