초록 ▼

A method of cleaning a dual damascene structure includes forming a first conductive layer in a substrate. A dielectric layer is formed over the substrate. A dual damascene opening is formed in the dielectric layer to expose the first conductive layer. A H2O2based aqueous solution is used to remove p

A method of cleaning a dual damascene structure includes forming a first conductive layer in a substrate. A dielectric layer is formed over the substrate. A dual damascene opening is formed in the dielectric layer to expose the first conductive layer. A H2O2based aqueous solution is used to remove polymer residues in the dual damascene opening. A temperature of the H2O2based aqueous solution is controlled so that the first conductive layer is not corroded. A diluted HF solution or a diluted HF and HCl solution is used to remove the polymer residues. A second conductive layer is formed over the substrate to fill the dual damascene opening. A chemical mechanical polishing process is performed with the dielectric layer serving as a polishing stop to remove the second conductive layer outside the dual damascene opening. A H2O2based aqueous solution is used to clean the hydrocarbon particulates from the chemical mechanically polishing step. A diluted HF solution or a diluted HF and HCl solution is used to remove the slurry residues, such as silicon oxide of the slurry, from the chemical mechanical polishing step.

대표청구항 ▼

A method of cleaning a dual damascene structure includes forming a first conductive layer in a substrate. A dielectric layer is formed over the substrate. A dual damascene opening is formed in the dielectric layer to expose the first conductive layer. A H2O2based aqueous solution is used to remove p

A method of cleaning a dual damascene structure includes forming a first conductive layer in a substrate. A dielectric layer is formed over the substrate. A dual damascene opening is formed in the dielectric layer to expose the first conductive layer. A H2O2based aqueous solution is used to remove polymer residues in the dual damascene opening. A temperature of the H2O2based aqueous solution is controlled so that the first conductive layer is not corroded. A diluted HF solution or a diluted HF and HCl solution is used to remove the polymer residues. A second conductive layer is formed over the substrate to fill the dual damascene opening. A chemical mechanical polishing process is performed with the dielectric layer serving as a polishing stop to remove the second conductive layer outside the dual damascene opening. A H2O2based aqueous solution is used to clean the hydrocarbon particulates from the chemical mechanically polishing step. A diluted HF solution or a diluted HF and HCl solution is used to remove the slurry residues, such as silicon oxide of the slurry, from the chemical mechanical polishing step. on of U.S. Patent Application Ser. No. 08/425,455. Catalano Exhibit B (Nov. 1997). Catalano Exhibit C (Nov. 1997). Catalano Exhibit D (Nov. 1997). Catalano Exhibit E (Nov. 1997). Catalano Exhibit F (Nov. 1997). Catalano Exhibit G (Nov. 1997). Catalano Exhibit H (Nov. 1997). Expert Report of Stephen Smith. Expert Report of Anthony Catalano. Expert Report of Dr. John T. Davies. Expert Report of Dr. Bruce E. Deal. Expert Report of Stephen J. Fonash. Expert Report of Arthur Jonath. Initial Expert Report of Harry F. Manbeck, Jr. First Supplemental Expert Report of Harry F. Manbeck, Jr. Second Supplemental Expert Report of Harry F. Manbeck, Jr. Expert Report of Jan E. A. Maurits. Initial Expert Report of Bernard S. Meyerson. Expert Report of Douglas Ruthven. Expert Report of D. Warren Vidrine. Expert Report of Christopher R. Wronski. Second Declaration by Dr. Yamazaki. Notice of Samsung's Motion for Summary Judgment Declaring U.S. Patent No. 5,543,636 Invalid For Failure To Enable. Defendant's Motion for Summary Judgment Declaring U.S. Patent No. 5,543,636 Invalid For Failure To Enable. Memorandum In Support Of Defandants' Motion For Summary Judgment Declaring U.S. Patent 5,543,636 Invalid For Failure To Enable. Semiconductor Energy Laboratory, Co., Ltd.'s Memorandum In Opposition To Defendants' Motion For Summary Judgement Declaring U.S. Patent No. 5,543,636 Invalid For Failure To Enable. Defendants' Reply In Support Of Motion For Summary Judgment Declaring U.S. Patent No. 5,543,636 For Failure To Enable. Declaration of Dr. Shunpei Yamazaki. Memorandum In Support Of Samsung's Motio