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A force feedback interface having isotonic and isometric control capability coupled to a host computer that displays a graphical environment such as a GUI. The interface includes a user manipulatable physical object movable in physical space, such as a mouse or puck. A sensor detects the object's mo

A force feedback interface having isotonic and isometric control capability coupled to a host computer that displays a graphical environment such as a GUI. The interface includes a user manipulatable physical object movable in physical space, such as a mouse or puck. A sensor detects the object's movement and an actuator applies output force on the physical object. A mode selector selects isotonic and isometric control modes of the interface from an input device such as a physical button or from an interaction between graphical objects. Isotonic mode provides input to the host computer based on a position of the physical object and updates a position of a cursor, and force sensations can be applied to the physical object based on movement of the cursor. Isometric mode provides input to the host computer based on an input force applied by the user to the physical object, where the input force is determined from a sensed deviation of the physical object in space. The input force opposes an output force applied by the actuator and is used to control a function of an application program, such as scrolling a document or panning or zooming a displayed view. An overlay force, such as a jolt or vibration, can be added to the output force in isometric mode to indicate an event or condition in the graphical environment.

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A force feedback interface having isotonic and isometric control capability coupled to a host computer that displays a graphical environment such as a GUI. The interface includes a user manipulatable physical object movable in physical space, such as a mouse or puck. A sensor detects the object's mo

A force feedback interface having isotonic and isometric control capability coupled to a host computer that displays a graphical environment such as a GUI. The interface includes a user manipulatable physical object movable in physical space, such as a mouse or puck. A sensor detects the object's movement and an actuator applies output force on the physical object. A mode selector selects isotonic and isometric control modes of the interface from an input device such as a physical button or from an interaction between graphical objects. Isotonic mode provides input to the host computer based on a position of the physical object and updates a position of a cursor, and force sensations can be applied to the physical object based on movement of the cursor. Isometric mode provides input to the host computer based on an input force applied by the user to the physical object, where the input force is determined from a sensed deviation of the physical object in space. The input force opposes an output force applied by the actuator and is used to control a function of an application program, such as scrolling a document or panning or zooming a displayed view. An overlay force, such as a jolt or vibration, can be added to the output force in isometric mode to indicate an event or condition in the graphical environment. routine being capable of executing the steps of: retrieving a predetermined etch rate schedule from the memory of the controller, the predetermined etch rate schedule comprising a function of desired aspect ratio dependent etch rate over time; mesuring an actual aspect ratio dependent etch rate by measuring the elapsed time between two conjugate maxima or minima points of the signal generated by the interferometer; comparing the actual aspect ratio dependent etch rate to the desired aspect ratio dependent etch rate in the retrieved predetermined etch rate schedule; and varying one or more of the process parameters of the wafer processing system to change the actual aspect ratio dependent etch rate occurring in the chamber to substantially follow the desired aspect ratio dependent etch rate. 2. The apparatus of claim 1 wherein said interferometer comprises: an optical fiber, coupled between a light source, a lens coupled to the light source, and a detector. 3. The apparatus of claim 1 further comprising: a pressure sensor coupled to said chamber and said controller for measuring a pressure within said chamber. 4. The apparatus of claim 1 further comprising a cathode and a temperature sensor coupled to said cathode and said controller. 5. The apparatus of claim 1 wherein the etch rate processing routine is capable of executing the step of: comparing said actual aspect ratio dependent etch rate to said desired aspect ratio dependent etch rate to determine an etch rate error. 6. An apparatus according to claim 5 wherein the controller is adapted to either increment a process parameter which lowers the aspect ratio dependent etch rate or decrement a process parameter that increases the aspect ratio dependent etch rate when the actual aspect ratio dependent etch rate is greater than the desired aspect ratio dependent etch rate. 7. An apparatus according to claim 5 wherein the controller is adapted to either increment a process parameter which increases the aspect ratio dependent etch rate or decrement a process parameter that lowers the aspect ratio dependent etch rate when the actual aspect ratio dependent etch rate is less than the desired aspect ratio dependent etch rate. 8. The apparatus of claim 1 wherein the controller is adapted to vary a process parameter comprising an RF power supplied to a gas in the chamber, a flow rate of a gas flowing into the chamber, a pressure in the chamber, or a temperature in the chamber. 9. An apparatus according to claim 1 wherein the controller is adapted to vary the process parameters to maintain the aspect ratio dependent etch rate at a constant etch rate. 10. An apparatus for controlling a wafer processing system having a chamber comprising a pedestal to support a substrate for the etching of features on the substrate, the apparatus comprising: an interferometer capable of generating a signal indicative of an etch rate that is dependent upon an aspect ratio of a feature being etched on the substrate; and a controller coupled to the interferometer and the wafer processing system, the controller being adapted to vary one or more process pararmeters of the wafer processing system in response to the signal, the process parameters comprising one or more of an RF power supplied to a gas in the chamber, a flow rate of a gas flowing into the chamber, a pressure in the chamber, and a temperature in the chamber, wherein the controller comprises a memory and an etch rate processing routine to control the etch rate, the etch rate processing routine being capable of executing the steps of: retrieving a predetermined etch rate schedule from the memory of the controller, the predetermined etch rate schedule comprising a function of desired aspect ratio dependent etch rate over time; measuring an actual aspect ratio dependent etch rate by measuring the elapsed time between two conjugate maxima or minima points of the signal generated by the interferometer; comparing the actua l aspect ratio dependent etch rate to the desired aspect ratio dependent etch rate in the retrieved predetermined etch rate schedule; and varying one or more of the process parameters to change the actual aspect ratio dependent etch rate to substantially follow the desired aspect ratio dependent etch rate. 11. The apparatus of claim 10 wherein the interferometer comprises: an optical fiber coupled between a light source, a lens coupled to the light source, and a detector. 12. The apparatus of claim 10 wherein the etch rate processing routine is capable of executing the step of: comparing the actual aspect ratio dependent etch rate to a desired aspect ratio dependent etch rate to determine an etch rate error. 13. An apparatus according to claim 12 wherein the controller is adapted to either increment a process parameter which lowers the aspect ratio dependent etch rate or decrement a process parameter that increases the aspect ratio dependent etch rate when the actual aspect ratio dependent etch rate is greater than the desired aspect ratio dependent etch rate. 14. An apparatus according to claim 12 wherein the controller is adapted to either increment a process parameter which increases the aspect ratio dependent etch rate or decrement a process parameter that lowers the aspect ratio dependent etch rate when the actual aspect ratio dependent etch rate is less than the desired aspect ratio dependent etch rate. 15. An apparatus according to claim 10 wherein the controller is adapted to maintain aspect ratio dependent the etch rate at a constant etch rate. 16. A wafer processing system comprising the apparatus of claim 10. 17. An apparatus for etching a substrate, the apparatus comprising: a chamber comprising a pedestal capable of supporting a substrate: a reactive gas source for delivering a reactive gas to the chamber and an excitation source capable of energizing the reactive gas to etch the substrate; an interferometer capable of generating a signal indicative of an actual aspect ratio dependent etch rate of the features being etched on the substrate; and a controller coupled to the interferometer, the controller being adapted to vary one or more process parameters in response to the signal, wherein the controller comprises a memory and an etch rate processing routine to control the actual aspect ratio dependent etch rate, the etch rate processing routine capable of executing the steps of: retrieving a predetermined etch rate schedule from the memory of the controller, the predetermined etch rate schedule comprising a function of desired aspect ratio dependent etch rate over time; comparing the actual aspect ratio dependent etch rate to the desired aspect ratio dependent etch rate in the predetermined etch rate schedule that is stored in a memory of the controller; and varying one or more process parameters of the wafer processing system to change the actual aspect ratio dependent etch rate occurring in the chamber to substantially follow the desired aspect ratio dependent etch rate. 18. An apparatus for etching a substrate, the apparatus comprising: a chamber comprising a pedestal capable of supporting a substrate; a reactive gas source for delivering a reactive gas to the chamber and an excitation source capable of energizing the reactive gas to etch the substrate; an interferometer to monitor features being etched in the substrate and generate a signal indicative of an actual aspect ratio dependent etch rate of the features being etched on the substrate; and a controller coupled to the interferometer, the controller comprising a memory and an etch rate processing routine capable of: receiving the signal from the interferometer; evaluating the signal to determine the actual aspect ratio dependent etch rate; during the processing of a first substrate, monitoring the actual aspect ratio dependent etch rate to generate an actual aspect ratio dependent etch rate profile and storing the actu