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A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less

A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

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A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less

A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece. ving a sputtering deposition rate, an outer ring-shaped region within the outer half of the radius and a base region separating the center region from the outer ring-shaped region, the outer ring-shaped region having a projection height for extending the sputter life of the sputtering target and the center region having a projection height of less than the projection height of the outer ring-shaped region as measured from the base region for increasing the sputtering deposition rate on the substrate adjacent the center region and improving sputtering uniformity. 2. The sputtering target of claim 1 wherein the center region is a solid disk-shaped projection of uniform height. 3. The sputtering target of claim 1 wherein the center region contains a disk-shaped projection and a dimpled region within the disk-shaped projection. 4. The sputtering target of claim 1 wherein the center region has a projection height of at least about 20 percent less than the projection height of the outer ring-shaped region as measured from the base region. 5. A sputtering target for depositing a material on a substrate comprising a circular disk, the disk having a sputter life, a radius and a top surface, the top surface having a center region within the inner thirty-five percent of the radius, the center region having a sputtering deposition rate, an outer ring-shaped region within the outer sixty percent of the radius and a base region separating the center region from the outer ring-shaped region, the outer ring-shaped region having a projection height for extending the sputter life of the sputtering target and the center region having a projection height of about 20 to 80 percent less than the projection height of the outer ring-shaped region as measured from the base region for increasing the sputtering deposition rate on the substrate adjacent the center region and improving sputtering uniformity. 6. The sputtering target of claim 5 wherein the center region is a solid disk-shaped projection of uniform height. 7. The sputtering target of claim 5 wherein the center region contains a disk-shaped projection and a dimpled region within the disk-shaped region. 8. The sputtering target of claim 5 having a first tapered region between the base region and the center region and a second tapered region between the base region and the outer ring-shaped region. 9. The sputtering target of claim 5 wherein the projection height of the center region is about 30 to 70 percent less than the projection height of the outer ring-shaped region as measured from the base region. 10. The sputtering target of claim 5 wherein the disk has a center and an outer edge and the center region is within the inner thirty percent of the radial distance between the center and the outer edge and the outer ring-shaped region is between seventy and ninety-five percent of the radial distance between the center and the outer edge. 11. The sputtering target of claim 5 wherein the sputtering target is aluminum or an aluminum alloy and the sputtering target coats the substrate with a maximum of about 1.5 percent sigma sheet resistance uniformity and the sputter life is at least 1000 kwh in a spinning magnetron sputtering chamber using a type A magnet. 12. A method for sputtering a material onto a substrate comprising: ionizing an inert gas adjacent a circular cathode in a sputtering chamber, the cathode having a sputter life, a radius and a top surface, the top surface having a center region with the inner half of the radius, an outer ring-shaped region within the outer half of the radius and a base region separating the center region from the outer ring-shaped region, the outer ring-shaped region having a projection height for extending the sputter life of the cathode and the center region having a projection height of less than the projection height of the outer ring-shaped region as measured from the base region for increasing the sputtering deposition rate and improving sputtering uniformity; and dislodging material from the cathode with a rotating magnetron to deposit the material onto the substrate. 13. The method of claim 12 wherein the dislodging of material occurs at a greater rate in the center region and in the outer ring-shaped region than in the base region. 14. The method of claim 12 wherein the cathode coats the substrate with a maximum 1.3 percent sigma sheet resistance uniformity and the cathode sputter life is at least 1000 kwh using a type A magnet. 15. The method of claim 12 wherein the cathode has an initial substrate to cathode spacing and a second substrate to cathode spacing substrate to cathode spacing being greater than the initial substrate to cathode spacing, and further comprising the step of moving the cathode after an initial period of time from the initial substrate to cathode spacing to the second substrate to cathode spacing to optimize sputtering deposition uniformity. 16. The method of claim 15, further comprising the step of moving the cathode fro the initial substrate to cathode spacing to the second substrate to cathode spacing after sputtering at least about thirty percent of the cathode sputter life. 17. The method of claim 15 further comprising the step of moving the cathode from the initial substrate to cathode spacing to the second substrate to cathode spacing after sputtering at least about forty percent of the cathode sputter life. 18. The method of claim 15 wherein the cathode is moved from the initial substrate to cathode spacing to the second substrate to cathode spacing no more than one time during the deposition of a material on a substrate. 19. The method of claim 12 wherein the cathode has an initial substrate to cathode spacing and a second substrate to cathode spacing, the second substrate to cathode spacing being greater than the initial substrate to cathode spacing, and wherein disloding material from the cathode with a rotating magnetron to deposit the material onto the substrate comprises dislodging material from the cathode to deposit a first portion of a coating on the substrate using the initial substrate to cathode spacing to optimize sputtering deposition uniformity for an initial period of time; and dislodging additional material from the cathode after the initial period of time to deposit a second portion of the coating on the substrate using the second substrate to cathode spacing to optimize sputtering deposition uniformity for a second period of time.