초록 ▼

There are disclosed a process for cleaning a harmful gas which comprises bringing the harmful gas containing as a harmful component, an organosilicon compound represented by the general formula: CH2CH--SiR3,CH2CH--Si(OR)3,CH2CHCH2--SiR3or CH2CHCH2--Si(OR)3,wherein R indicates a saturated hydrocarbon

There are disclosed a process for cleaning a harmful gas which comprises bringing the harmful gas containing as a harmful component, an organosilicon compound represented by the general formula: CH2CH--SiR3,CH2CH--Si(OR)3,CH2CHCH2--SiR3or CH2CHCH2--Si(OR)3,wherein R indicates a saturated hydrocarbon group or an aromatic compound group, into contact with a cleaning agent comprising activated carbon adhesively incorporated with at least one species selected from the group consisting of bromine, iodine, a metal bromide and a metal iodide in which the metal is exemplified by copper, lithium, sodium, potassium, magnesium, calcium, strontium, manganese, iron, cobalt, nickel, zinc, aluminum and tin; and a cleaning agent comprising the same. The cleaning process and the cleaning agent enable to practically clean a harmful gas which is exhausted from a semiconductor manufacturing process and the like by the use of a dry cleaning process.

대표청구항 ▼

1. A process for cleaning a harmful gas which comprises bringing the harmful gas containing as a harmful component, an organosilicon compound represented by the general formula: CH2CH--SiR3,CH2CH--Si(OR)3,CH2CHCH2--SiR3or CH2CHCH2--Si(OR)3, wherein R is a saturated hydrocarbon group or an aromatic c

1. A process for cleaning a harmful gas which comprises bringing the harmful gas containing as a harmful component, an organosilicon compound represented by the general formula: CH2CH--SiR3,CH2CH--Si(OR)3,CH2CHCH2--SiR3or CH2CHCH2--Si(OR)3, wherein R is a saturated hydrocarbon group or an aromatic compound group, into contact with a cleaning agent comprising activated carbon adhesively incorporated with at least one species selected from the group consisting of bromine, iodine, a metal bromide and a metal iodide. 2. The process for cleaning a harmful gas according to claim 1, wherein the organosilicon compound is at least one species selected from the group consisting of vinyltrimethylsilane, vinyltrimethoxysilane, allyltrimethylsilane, allyltrimethoxysilane and allyltriphenylsilane. 3. The process for cleaning a harmful gas according to claim 1, wherein the metal bromide is at least one species selected from the group consisting of lithium bromide, sodium bromide, potassium bromide, magnesium bromide, calcium bromide, strontium bromide, manganese bromide, iron bromide, cobalt bromide, nickel bromide, copper bromide, zinc bromide, aluminum bromide and tin bromide. 4. The process for cleaning a harmful gas according to claim 1, wherein the metal iodide is at least one species selected from the group consisting of lithium iodide, sodium iodide, potassium iodide, magnesium iodide, calcium iodide, strontium iodide, manganese iodide, iron iodide, cobalt iodide, nickel iodide, copper iodide, zinc iodide and tin iodide.