초록 ▼

One embodiment of the invention involves introducing at least two metals into a chamber for forming an alloy layer over a substrate. This is accomplished by a variety of methods. In one embodiment, at least two metals are mixed and introduced into a chamber in which a focused ion beam contacts the t

One embodiment of the invention involves introducing at least two metals into a chamber for forming an alloy layer over a substrate. This is accomplished by a variety of methods. In one embodiment, at least two metals are mixed and introduced into a chamber in which a focused ion beam contacts the two metals to form at least one alloy layer over a substrate. In another embodiment, at least two precursor gas sources are introduced into the chamber in which each precursor gas source contains a metal. The focused ion beam contacts the two precursor gases to form an alloy layer over the substrate. In yet another embodiment, a second metal layer is formed over a first metal layer to form a multi-metal layer. Thereafter, thermal treatment or introducing a focused ion beam to at least a portion of the multi-metal layer is performed to create at least one alloy layer over the substrate.

대표청구항 ▼

1. A method comprising: providing at least two metal constituents in a powder form; mixing the at least two metal constituents provided in the powder form; placing the mixed metal constituents into a reservoir coupled to an outlet; positioning the outlet adjacent to a focused ion beam aperture

1. A method comprising: providing at least two metal constituents in a powder form; mixing the at least two metal constituents provided in the powder form; placing the mixed metal constituents into a reservoir coupled to an outlet; positioning the outlet adjacent to a focused ion beam aperture; and releasing the mixed metal constituents through the outlet positioned adjacent to the focused ion beam aperture such that the focused ion beam contacts the mixed metal constituents to form a first alloy layer over a substrate, wherein the first alloy layer serves as an electrical interconnect between devices formed on the substrate. 2. The method of claim 1, further comprising: forming more than one alloy layer over the substrate, wherein a second alloy layer is formed over the first alloy layer. 3. The method of claim 1, wherein each of the at least two metal constituents is selected from the group consisting of cobalt, molybdenum, and tungsten. 4. The method of claim 2, wherein the second alloy layer is created from a second multi-metal layer which is exposed to an alloy process. 5. The method of claim 4, wherein the alloy process includes thermal treatment. 6. The method of claim 1, wherein an electrical resistivity of the alloy layer formed over the substrate is about 10 μΩ×cm to about 120 μΩ×cm.