The invention includes a method of forming a DRAM cell. A first substrate is formed to include first DRAM sub-structures separated from one another by an insulative material. A second semiconductor substrate having a monocrystalline material is bonded to the first substrate. After the bonding, secon
The invention includes a method of forming a DRAM cell. A first substrate is formed to include first DRAM sub-structures separated from one another by an insulative material. A second semiconductor substrate having a monocrystalline material is bonded to the first substrate. After the bonding, second DRAM sub-structures are formed in electrical connection with the first DRAM sub-structures. The invention also includes a semiconductor structure which has a capacitor structure, and a first substrate defined to encompass the capacitor structure. The semiconductor structure further includes a monocrystalline silicon substrate bonded to the first substrate and over the capacitor structure. Additionally, the semiconductor structure includes a transistor gate on the monocrystalline silicon substrate and operatively connected with the capacitor structure to define a DRAM cell.
대표청구항▼
The invention includes a method of forming a DRAM cell. A first substrate is formed to include first DRAM sub-structures separated from one another by an insulative material. A second semiconductor substrate having a monocrystalline material is bonded to the first substrate. After the bonding, secon
The invention includes a method of forming a DRAM cell. A first substrate is formed to include first DRAM sub-structures separated from one another by an insulative material. A second semiconductor substrate having a monocrystalline material is bonded to the first substrate. After the bonding, second DRAM sub-structures are formed in electrical connection with the first DRAM sub-structures. The invention also includes a semiconductor structure which has a capacitor structure, and a first substrate defined to encompass the capacitor structure. The semiconductor structure further includes a monocrystalline silicon substrate bonded to the first substrate and over the capacitor structure. Additionally, the semiconductor structure includes a transistor gate on the monocrystalline silicon substrate and operatively connected with the capacitor structure to define a DRAM cell. /SUP>represents alkoxy (the alkyl moiety of said alkoxy is straight-chain alkyl having 1, 2, or 4-14 carbon atoms or branched-chain alkyl having 1 to 14 carbon atoms), or NR2R3(wherein R2and R3are the same or different, and each represents hydrogen, straight-chain lower alkyl having 1 to 3 carbon atoms, or branched-chain lower alkyl having 3 to 8 carbon atoms, with the proviso that when one of R2and R3is hydrogen, the other is not CH2CH2CH3,CH2CH(CH3)2,or C(CH3)3), or a pharmaceutically acceptable salt thereof. 8. The method according to claim 7, wherein R1is NR2R3. 9. The method according to claim 7, wherein R1is alkoxy. 10. The method according to claim 8, wherein R2and R3independently represent straight-chain lower alkyl having 1 to 3 carbon atom, or branched-chain lower alkyl having 3 to 8 carbon atoms, or a pharmaceutically acceptable salt thereof. 11. The method according to claim 8, wherein R2represents hydrogen, and R3represents straight-chain lower alkyl having 1 to 3 carbon atoms, or branched-chain lower alkyl having 3 to 8 carbon atoms, or a pharmaceutically acceptable salt thereof. 12. A method for treating a person having breast cancer associated with the overproduction of estrone produced from estrone sulfate, which comprises administering a therapeutically effective amount of an estra-1,3,5(10),16-tetraene derivative represented by formula (I): wherein R1represents alkoxy (the alkyl moiety of said alkoxy is straight-chain alkyl having 1, 2, or 4-14 carbon atoms or branched-chain alkyl having 1 to 14 carbon atoms), or NR2R3(wherein R2and R3are the same or different, and each represents hydrogen, straight-chain lower alkyl having 1 to 3 carbon atoms, or branched-chain lower alkyl having 3 to 8 carbon atoms, with the proviso that when one of R2and R3is hydrogen, the other is not CH2CH2CH3,CH2CH(CH3)2,or C(CH3)3), or a pharmaceutically acceptable salt thereof. 13. The method according to claim 12, wherein R1is NR2R3. 14. The method according to claim 12, wherein R1is alkoxy. 15. The method according to claim 13, wherein R2and R3independently represent straight-chain lower alkyl having 1 to 3 carbon atom, or branched-chain lower alkyl having 3 to 8 carbon atoms, or a pharmaceutically acceptable salt thereof. 16. The method according to claim 13, wherein R2represents hydrogen, and R3represents straight-chain lower alkyl having 1 to 3 carbon atoms, or branched-chain lower alkyl having 3 to 8 carbon atoms, or a pharmaceutically acceptable salt thereof.
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이 특허에 인용된 특허 (19)
Fernando Gonzalez ; Kevin L. Beaman ; John T. Moore ; Ron Weimer, DRAM cell constructions, and methods of forming DRAM cells.
Murari Bruno,ITX ; Villa Flavio,ITX ; Mastromatteo Ubaldo,ITX, Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication.
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