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A semiconductor device includes a semiconductor substrate on which a circuit element forming region and a plurality of connection pads are formed, a first columnar electrode which is formed on a first connection pad so as to be electrically connected to the first connection pad, a first conductive l

A semiconductor device includes a semiconductor substrate on which a circuit element forming region and a plurality of connection pads are formed, a first columnar electrode which is formed on a first connection pad so as to be electrically connected to the first connection pad, a first conductive layer which is formed on a second connection pad so as to be electrically connected to the second connection pad, an encapsulating film which is formed at least around the first columnar electrode, on the semiconductor substrate and on the first conductive layer, and a second conductive layer which is formed on the encapsulating film so as to face the first conductive layer. A passive element is formed from the first and second conductive layers.

대표청구항 ▼

A semiconductor device includes a semiconductor substrate on which a circuit element forming region and a plurality of connection pads are formed, a first columnar electrode which is formed on a first connection pad so as to be electrically connected to the first connection pad, a first conductive l

A semiconductor device includes a semiconductor substrate on which a circuit element forming region and a plurality of connection pads are formed, a first columnar electrode which is formed on a first connection pad so as to be electrically connected to the first connection pad, a first conductive layer which is formed on a second connection pad so as to be electrically connected to the second connection pad, an encapsulating film which is formed at least around the first columnar electrode, on the semiconductor substrate and on the first conductive layer, and a second conductive layer which is formed on the encapsulating film so as to face the first conductive layer. A passive element is formed from the first and second conductive layers. 970900, Bowers et al., 514/016; US-5663171, 19970900, Chen et al., 514/019; US-5700827, 19971200, Schnorrenberg et al., 514/414; US-5721250, 19980200, Morriello et al., 514/318; US-5756528, 19980500, Anthony et al., 514/399; US-5773441, 19980600, Hipskind et al., 514/253; US-5798337, 19980800, Somers et al., 514/019; US-5830855, 19981100, Takemoto, 514/011; US-6046333, 20000400, Dorziotis et al., 546/018; US-6329342, 20011200, Kauffman et al., 514/016