Microelectromechanic relay and method for the production thereof
IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0049260
(2002-06-26)
|
우선권정보 |
DE-0035819 (1999-07-29) |
국제출원번호 |
PCT/EP00/07316
(2000-07-28)
|
국제공개번호 |
WO01/09911
(2001-02-08)
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발명자
/ 주소 |
- Schlaak, Helmut
- Hanke, Martin
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출원인 / 주소 |
- Tyco Electronics Logistics AG
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
1 인용 특허 :
7 |
초록
▼
The invention relates to a relay, especially a miniaturized electrostatic relay, comprising a bridge-type make contact. The contact spring is designed as a torsion spring that is linked with a switching spring (3) via multiply bent spring parts (7). It is thus possible in particular to compensate fi
The invention relates to a relay, especially a miniaturized electrostatic relay, comprising a bridge-type make contact. The contact spring is designed as a torsion spring that is linked with a switching spring (3) via multiply bent spring parts (7). It is thus possible in particular to compensate fixed contacts (2) of different heights. The invention further relates to a method for producing the relay as a micro-mechanical electrostatic relay.
대표청구항
▼
The invention relates to a relay, especially a miniaturized electrostatic relay, comprising a bridge-type make contact. The contact spring is designed as a torsion spring that is linked with a switching spring (3) via multiply bent spring parts (7). It is thus possible in particular to compensate fi
The invention relates to a relay, especially a miniaturized electrostatic relay, comprising a bridge-type make contact. The contact spring is designed as a torsion spring that is linked with a switching spring (3) via multiply bent spring parts (7). It is thus possible in particular to compensate fixed contacts (2) of different heights. The invention further relates to a method for producing the relay as a micro-mechanical electrostatic relay. terposed between the Ni layer and the first layer made of at least one selected from the group consisting of Mo, Cr and W of said substrate electrode. 8. An electrode for a semiconductor device comprising: a) a substrate electrode formed on a surface of a semiconductor by ohmic-contacting the surface of the semiconductor, said substrate electrode having a layer structure; and b) a surface electrode formed to cover a top surface and all side faces of said substrate electrode, wherein said substrate electrode has a layer structure obtained by laminating an AuGe layer, an Ni layer, a first Mo layer, and a Pt layer in this order, said surface electrode having a layer structure obtained by laminating a second Mo layer and an Au layer in this order. 9. The electrode of claim 8, wherein a second Au layer is interposed between the Ni layer and the first Mo layer of said substrate electrode. 10. An electrode for a semiconductor device formed on a surface of the semiconductor by ohmic-contacting the surface of the semiconductor, said electrode comprising: a layer structure obtained by laminating a first layer made of least one selected from the group consisting of Mo, Cr and W; a layer made of at least one selected from the group consisting of Pt and Pd; and a second layer made of at least one selected from the group consisting of Mo, Cr and W; in this order, wherein said layer structure comprises a first layer structure obtained by laminating an AuGeNi layer; the first layer made of at least one selected from the group consisting of Mo, Cr and W; and the layer made of at least one selected from the group consisting of Pt and Pd; in this order; and a second layer structure obtained by laminating the second layer made of at least one selected from the group consisting of Mo, Cr and W and an Au layer, in this order. 11. The electrode of claim 10, wherein a second Au layer is interposed between the AuGeNi layer and the first layer made of at least one selected from the group consisting of Mo, Cr and W of said first layer structure. 12. An electrode for a semiconductor device formed on a surface of the semiconductor by ohmic-contacting the surface of the semiconductor, said electrode comprising: a layer structure obtained by laminating a first layer made of least one selected from the group consisting of Mo, Cr and W; a layer made of at least one selected from the group consisting of Pt and Pd; and a second layer made of at least one selected from the group consisting of Mo, Cr and W; in this order, wherein said layer structure comprises a first layer structure obtained by laminating an AuGeNi layer, a first Mo layer, and a Pt layer in this order, and a second layer structure obtained by laminating a second Mo layer and an Au layer in this order. 13. The electrode of claim 12, wherein a second Au layer is interposed between the AuGeNi layer and the first Mo layer of said first layer structure. 14. An electrode for a semiconductor device formed on a surface of the semiconductor by ohmic-contacting the surface of the semiconductor, said electrode comprising: a layer structure obtained by laminating a first layer made of least one selected from the group consisting of Mo, Cr and W; a layer made of at least one selected from the group consisting of Pt and Pd; and a second layer made of at least one selected from the group consisting of Mo, Cr and W; in this order, wherein said layer structure comprises a first layer structure obtained by laminating an AuGe layer, an Ni layer, the first layer made of at least one selected from the group consisting of Mo, Cr and W; and the layer made of at least one selected from the group consisting of Pt and Pd in this order; and a second layer structure obtained by laminating the second layer of at least one selected from a group consisting of Mo, Cr and W; and an Au layer in this order. 15. The electrode of claim 14, wherein: a second Au layer is interposed
이 특허에 인용된 특허 (7)
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Goodwin-Johansson Scott Halden, Arc resistant high voltage micromachined electrostatic switch.
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R. Sjhon Minners, Bistable micro-switch and method for manufacturing the same.
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Tai Yu-Chong ; Wright John A., Micro-electromechanical relays.
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Norling Brian L. (Mill Creek WA), Micromachined thermal switch.
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Schlaak Helmut (Berlin DEX) Gevattter Hans-Juergen (Berlin DEX) Kiesewetter Lothar (Berlin DEX) Schimkat Joachim (Berlin DEX), Micromechanical electrostatic relay with geometric discontinuity.
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Schlaak Helmut (Berlin DEX) Schimkat Joachim (Berlin DEX), Micromechanical relay.
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Vuilleumier Raymond,CHX, Miniature device for executing a predetermined function, in particular microrelay.
이 특허를 인용한 특허 (1)
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Drabe, Christian; Klose, Thomas, Torsion spring for micromechanical applications.
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