초록 ▼

A method of the invention is for operating a media feed motor of a printer to perform a media feed move of a predetermined distance and includes steps a) through c). Step a) includes choosing a position-error scale factor for a media feed move that is within a range of distances. Step b) includes ca

A method of the invention is for operating a media feed motor of a printer to perform a media feed move of a predetermined distance and includes steps a) through c). Step a) includes choosing a position-error scale factor for a media feed move that is within a range of distances. Step b) includes calculating a media-feed-motor drive signal which includes a position error contribution substantially equal to the product of the position-error scale factor and the difference between a desired final media position at the end of a media feed move and the actual media position. Step c) includes modifying the position error contribution in step b) to reduce its effect when the predetermined distance is greater than the maximum distance within the range but not when the predetermined distance is less than the maximum distance within the range.

대표청구항 ▼

A method of the invention is for operating a media feed motor of a printer to perform a media feed move of a predetermined distance and includes steps a) through c). Step a) includes choosing a position-error scale factor for a media feed move that is within a range of distances. Step b) includes ca

A method of the invention is for operating a media feed motor of a printer to perform a media feed move of a predetermined distance and includes steps a) through c). Step a) includes choosing a position-error scale factor for a media feed move that is within a range of distances. Step b) includes calculating a media-feed-motor drive signal which includes a position error contribution substantially equal to the product of the position-error scale factor and the difference between a desired final media position at the end of a media feed move and the actual media position. Step c) includes modifying the position error contribution in step b) to reduce its effect when the predetermined distance is greater than the maximum distance within the range but not when the predetermined distance is less than the maximum distance within the range. ethod of manufacturing a charge-coupled device, wherein masked doping is employed to provide a semiconductor body, at a surface, with a zone of a first conductivity type forming a charge-transport channel, and with a well of the opposite, i.e. the second conductivity type, which extends from the surface deeper into the semiconductor body than the zone and surrounds said zone inside the semiconductor body, characterized in that in the doping step of the well, a mask is used which locally masks the surface at the location of the charge-transport channel already present or yet to be formed, as a result of which locally in the well, below the charge-transport channel, a lower doping concentration is obtained than in adjoining parts of the well. ; "GaAs/GaAIAs Power HBTs for Mobile Communications"; Microwave Symposium Digest; 1993 IEEE; vol. 2; pp. 549-552. Y. Ota et al.; "Application of Heterojunction FET to Power Amplifier for Cellular Telephone"; Electronics Letters; 26th May 1994; vol. 30, No. 11; pp. 906-907. Keiichi Sakuno et al; "A 3.5W HBT MMIC Power Amplifier Module for Mobile Communications"; IEEE 1994; Microwave and Millimeter-Wave Monolithic Circuits Symposium; pp. 63-66. Mitsubishi Semiconductors Press Release (GaAs FET's) Nov. 8, 1999 pp. 1-2. R.J. Matyi et al; "Selected Area Heteroepitaxial Growth of GaAs on Silicon for Advanced Device Structures"; 2194 Thin Solid Films; 181 (1989) Dec. 10; No.1; pp. 213-225. K. Nashimoto et al; "Patterning of Nb, LaOnZr, TiO3 Waveguides for Fabricating Micro-Optics Using Wet Etching and Solid-Phase Epitaxy"; Applied Physics Letters; vol. 75, No. 8; Aug. 23, 1999; pp. 1054-1056. Bang-Hung Tsao et al; "Sputtered Barium Titanate and Barium Strontium Titanate Films for Capacitor Applications"; Applications of Ferroelectrics, 2000; Proceedings of the 2000 12th International Symposium on vol. 2; pp. 837-840. Man Fai Ng et al; "Heteroepitaxial growth of lanthanum aluminate films derived from mixed metal nitrates"; Journal of Materials Research; vol. 12, No. 5; pp. 1306. Yuji Matsumo