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A method for fabricating a semiconductor device includes removing a predetermined part of an insulative layer of a coated fine metallic wire by irradiating the predetermined part with a laser light and connecting the predetermined part of the fine metallic wire to one of the semiconductor device and

A method for fabricating a semiconductor device includes removing a predetermined part of an insulative layer of a coated fine metallic wire by irradiating the predetermined part with a laser light and connecting the predetermined part of the fine metallic wire to one of the semiconductor device and a package of the semiconductor device. The insulative layer contains a substance that absorbs the laser light at a predetermined lasing wavelength.

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1. A method for fabricating semiconductor device comprising: removing a predetermined part of an insulative layer of a coated fine metallic wire, by irradiating said predetermined part of said insulative layer with a laser light, said insulative layer containing a substance absorbing said laser l

1. A method for fabricating semiconductor device comprising: removing a predetermined part of an insulative layer of a coated fine metallic wire, by irradiating said predetermined part of said insulative layer with a laser light, said insulative layer containing a substance absorbing said laser light of a predetermined lasing wavelength; and connecting said fine metallic wire at said predetermined part to one of said semiconductor device and a package of said semiconductor device. 2. The method for fabricating a semiconductor device according to claim 1, wherein said laser light comprises ultraviolet laser light. 3. The method of claim 1, wherein said fine metallic wire comprises gold. 4. The method of claim 1, wherein said fine metallic wire comprises aluminum. 5. The method of claim 1, wherein said insulative layer comprises nylon resin containing about 15 weight percent of iron black pigment. 6. The method of claim 1, wherein said insulative layer comprises more than 3 but no more than 35 weight percent of pigment. 7. The method of claim 1, wherein said insulative layer comprises more than 3 but no more than 35 weight percent of dye. 8. The method of claim 7, wherein said dye comprises one of azo dye, anthraquinone dye, indigoid dye, diphenylmetane dye, tryphenylmetane dye, xanthene dye, acridine dye, azine dye, oxazine dye, thiazine dye, quinoline dye and phthalocyanine dye. 9. The method of claim 1, wherein said insulative layer comprises more than 3 but not more than 30 weight percent of carbonic impalpable powder. 10. The method of claim 9, wherein said carbonic impalpable powder comprises particles having a diameter of less than 1 μm. 11. The method of claim 1, wherein said insulative layer is formed directly on a surface of said fine metallic wire. 12. The method of claim 1, wherein the fine metallic wire is unharmed during said removing of said predetermined part of said insulative layer.