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A method of cleaning and removing water and entrained solutes during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, ME

A method of cleaning and removing water and entrained solutes during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide drying composition, the cleaning composition comprising carbon dioxide, water, and, optionally but preferably, a cleaning adjunct; (c) immersing the surface portion in the densified carbon dioxide cleaning composition; and then (d) removing the cleaning composition from the surface portion.

대표청구항 ▼

A method of cleaning and removing water and entrained solutes during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, ME

A method of cleaning and removing water and entrained solutes during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide drying composition, the cleaning composition comprising carbon dioxide, water, and, optionally but preferably, a cleaning adjunct; (c) immersing the surface portion in the densified carbon dioxide cleaning composition; and then (d) removing the cleaning composition from the surface portion. ounds, potassium compounds, magnesium compounds and combinations thereof. 30. A method as recited in claim 1, further comprising the step of adding a sulfate-binding material to said pressure oxidizing step, said sulfate-binding material being in the form of a compound selected from the group consisting of calcium carbonate, calcium oxide, calcium hydroxide and combinations thereof. 31. A method as recited in claim 1, further comprising the step of adding a sulfate-binding material to said pressure oxidizing step, wherein said sulfate-binding material is in the form of a carbonate compound. 32. A method as recited in claim 1, wherein said pressure oxidizing step comprises the steps of pressure oxidizing said aqueous feed slurry in an autoclave and monitoring the value of at least one property of contents of said slurry within said autoclave, analyzing the value, and based on the analyzing, adjusting a feed rate to the reactor of at least one of a sulfate-binding material and said mineral feed. 33. A method as recited in claim 32, wherein said at least one property is temperature. 34. A method as recited in claim 32, wherein said at least one property is pressure. 35. A method as recited in claim 1, further comprising the step of monitoring the value of at least one property of said discharge slurry, analyzing the value and based on the analyzing, adjusting a process variable selected from mineral feed feed rate, sulfate-binding material feed rate and temperature. 36. A method as recited in claim 35, wherein said at least one property is iron concentration in said discharge slurry. 37. A method as recited in claim 35, wherein said at least one property is emf. 38. A method as recited in claim 35, wherein said at least one property is free acid level. 39. A method as recited in claim 1, further comprising the step of monitorin