초록 ▼

Explosive forces are used to fill interconnect material into trenches, via holes and other openings in semiconductor products. The interconnect material may be formed of metal. The metal may be heated prior to the force filling step. The explosive forces may be generated, for example, by igniting mi

Explosive forces are used to fill interconnect material into trenches, via holes and other openings in semiconductor products. The interconnect material may be formed of metal. The metal may be heated prior to the force filling step. The explosive forces may be generated, for example, by igniting mixtures of gases such as hydrogen and oxygen, or liquids such as alcohol and hydrogen peroxide. To control or buffer the explosive force, a baffle may be interposed between the explosions and the products being processed. The baffle may be formed of a porous material to transmit waves to the semiconductor products while protecting the products from contaminants. Various operating parameters, including the flow rate of the fuel and the oxidizing materials, may be positively controlled. In another embodiment of the invention, a piston is used to transmit the explosive force. If desired, an annular space at the periphery of the piston may be maintained at atmospheric pressure to protect against wafer contamination. A compact apparatus for filling holes in semiconductor wafers is also disclosed.

대표청구항 ▼

1. A method of making a semiconductor product, said method comprising the steps of: providing a conductive layer on an insulating layer; using gas to apply an explosive force to said conductive layer; and providing an opening in said insulating layer, and wherein said step of applying said explosive

1. A method of making a semiconductor product, said method comprising the steps of: providing a conductive layer on an insulating layer; using gas to apply an explosive force to said conductive layer; and providing an opening in said insulating layer, and wherein said step of applying said explosive force includes the step of moving conductive material into said opening. 2. The method of claim 1, wherein said semiconductor product is a wafer, and said opening is a trench. 3. The method of claim 1, wherein said semiconductor product is a wafer, and said opening is a via hole. 4. The method of claim 1, wherein said semiconductor product is a wafer, and said conductive layer includes metal. 5. The method of claim 4, wherein said step of moving said conductive material into said opening includes the step of bringing said conductive material into contact with an active layer. 6. The method of claim 1, further comprising the step of generating said explosive force by initiating a chemical reaction in said gas. 7. The method of claim 6, wherein said chemical reaction is a combustion reaction. 8. The method of claim 7, wherein said initiating step includes the step of igniting a mixture of hydrogen and oxygen. 9. A method of processing a semiconductor wafer, said method comprising the steps of: providing malleable material in the vicinity of openings in said wafer; applying an explosive force to said malleable material; and heating said malleable material, said heating step occurring prior to said step of applying said explosive force. 10. The method of claim 9, further comprising the steps of using gas as the source of said explosive force, and locating a baffle over said malleable material, such that said baffle is located between said malleable and said gas source. 11. The method of claim 10, wherein said baffle includes a flexible diaphragm. 12. The method of claim 9, further comprising the step of using a piston to transmit said explosive force toward said wafer. 13. The method of claim 12, further comprising the step of pressurizing gas in the vicinity of said openings, and wherein said pressurizing step occurs prior to said step of applying said explosive force. 14. A method of processing a semiconductor wafer, said method comprising the steps of: providing malleable material in the vicinity of openings in said wafer; applying an explosive force to said malleable material; and immersing said wafer in water during said step of applying said explosive force to said malleable material. 15. A method of processing a semiconductor wafer, said method comprising the steps of: providing malleable material in the vicinity of openings in said wafer; using gas as a source of explosive force; applying said explosive force to said malleable material; and isolating said wafer in heavy gas during said step of applying said explosive force said malleable material. 16. A method of filling a surface discontinuity in a semiconductor product, said method comprising the steps of: depositing conductive material over said surface discontinuity; subsequently, applying an explosive force to said conductive material; and deforming said conductive material into said surface discontinuity, and wherein the deformation of said conductive material into said surface discontinuity is caused by the application of said explosive force. 17. The method of claim 16, further comprising the step of heating said semiconductor product, and wherein said heating step occurs prior to said step of applying said explosive force. 18. The method of claim 17, further comprising the step of initiating a combustion reaction.